Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals h...Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum(CBM) matched self-driven SnS_(2)/WS_(2) van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination.This is attributed to the built-in electric field at the interface of the SnS_(2) and WS_(2) layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al_(2)O_(3) layer is covered by the surface of the SnS_(2)/WS_(2) photodetector to further improve the performance, because the Al_(2)O_(3) layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.展开更多
Among the present three types of electric field-induced luminescence we noticed similarities between the inorganic and organic materials in electric field intensity. In this high electric field range SiO2 has three fu...Among the present three types of electric field-induced luminescence we noticed similarities between the inorganic and organic materials in electric field intensity. In this high electric field range SiO2 has three functions: acceleration, excitation and multiplication of electrons. Based on the acceleration effect, cathodoluminescence-like emission of organic molecules and polymers was found. By using the three functions of SiO2 or II-VI compounds and the heterojunction of inorganic and organic material we realized different variants of mixed excitation in electroluminescence.展开更多
Two-dimensional(2D)lateral heterostructures,an interesting class of nanostructures,have shown great promise in optoelectronics and nanoelectronics due to their unique electronic and optical properties.In recent years,...Two-dimensional(2D)lateral heterostructures,an interesting class of nanostructures,have shown great promise in optoelectronics and nanoelectronics due to their unique electronic and optical properties.In recent years,significant progress has been made in the controlled growth of 2D lateral heterostructures.However,challenges remain in areas such as material selection and compatibility,interface quality,and precise control over the growth process.High-quality interfaces are critical for the optoelectronic performance of these heterostructures,yet ensuring uniformity and consistency during fabrication continues to be a major obstacle.This review provides a comprehensive overview of the recent developments in the controlled growth of 2D lateral heterostructures.It examines the fabrication methods for various types of 2D lateral heterostructures and their associated challenges.The review also discusses the properties and potential applications of these heterostructures,aiming to offer a deeper understanding of their preparation,characteristics,and future prospects.By identifying existing challenges and opportunities in the fabrication process,this work seeks to guide future advancements in the field and support the efficient large-scale production of high-quality 2D lateral heterostructures.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61974144,62004127,and 12074263)the Science and Technology Foundation of Shenzhen (Grant No.JSGG20191129114216474)the “National” Taipei University of Technology–Shenzhen University Joint Research Program,China (Grant No.2020009)。
文摘Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum(CBM) matched self-driven SnS_(2)/WS_(2) van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination.This is attributed to the built-in electric field at the interface of the SnS_(2) and WS_(2) layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al_(2)O_(3) layer is covered by the surface of the SnS_(2)/WS_(2) photodetector to further improve the performance, because the Al_(2)O_(3) layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.
基金Project was supported by the National Natural Science Foundation of China (Grant No. 29992530 and 19974002).
文摘Among the present three types of electric field-induced luminescence we noticed similarities between the inorganic and organic materials in electric field intensity. In this high electric field range SiO2 has three functions: acceleration, excitation and multiplication of electrons. Based on the acceleration effect, cathodoluminescence-like emission of organic molecules and polymers was found. By using the three functions of SiO2 or II-VI compounds and the heterojunction of inorganic and organic material we realized different variants of mixed excitation in electroluminescence.
基金supported by the National Natural Science Foundation of China(Grant No.52302204 and 52073308)the Hunan Provincial Natural Science Foundation of China(Grant No.2022JJ20085)+2 种基金the Changsha Natural Science Foundation(Grant No.kq2202092)the Key Project of the Natural Science Program of Xinjiang Uygur Autonomous Region(Grant No.2023D01D03)the Ningbo Natural Science Foundation(2023J023)the Fundamental Research Funds for the Central Universities of Central South University(Grant No.1053320210118).
文摘Two-dimensional(2D)lateral heterostructures,an interesting class of nanostructures,have shown great promise in optoelectronics and nanoelectronics due to their unique electronic and optical properties.In recent years,significant progress has been made in the controlled growth of 2D lateral heterostructures.However,challenges remain in areas such as material selection and compatibility,interface quality,and precise control over the growth process.High-quality interfaces are critical for the optoelectronic performance of these heterostructures,yet ensuring uniformity and consistency during fabrication continues to be a major obstacle.This review provides a comprehensive overview of the recent developments in the controlled growth of 2D lateral heterostructures.It examines the fabrication methods for various types of 2D lateral heterostructures and their associated challenges.The review also discusses the properties and potential applications of these heterostructures,aiming to offer a deeper understanding of their preparation,characteristics,and future prospects.By identifying existing challenges and opportunities in the fabrication process,this work seeks to guide future advancements in the field and support the efficient large-scale production of high-quality 2D lateral heterostructures.
