Silicon nitride photonics has emerged as a promising integrated optical platform due to its broad transparency window,low optical loss,and mature fabrication technology.However,the inherent centrosymmetric crystal str...Silicon nitride photonics has emerged as a promising integrated optical platform due to its broad transparency window,low optical loss,and mature fabrication technology.However,the inherent centrosymmetric crystal structure of silicon nitride fundamentally restricts its applications in second-order nonlinear optical processes.Monolayer transition metal dichalcogenides,particularly tungsten disulfide(WS_(2)),exhibit strong second-order nonlinear responses,making them ideal candidates for nonlinear photonic applications.Herein,we demonstrate a heterogeneously integrated platform combining silicon nitride waveguides with chemical vapor deposition(CVD)-grown monolayer WS_(2),enabling second harmonic generation.A specially designed silica cladding featuring gentle-slope profile on silicon nitride strip waveguides facilitates the integration of centimeter-scale WS_(2)film with photonic circuits.This approach provides a robust solution for incorporating second-order nonlinearity into silicon nitride photonic systems.The demonstrated platform holds significant potential for advancing quantum networks,visible-light lasers,and integrated optical modulation/detection systems.展开更多
The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which ...The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.展开更多
In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor...In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.展开更多
Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The chann...Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.展开更多
As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerston...As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.展开更多
Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ...Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).展开更多
The imbalance in heat power generated by various types of chips poses an obstacle to the reliability and performance of heterogeneous integration(HI)packaging technology,leading to excessive cooling that reduces the s...The imbalance in heat power generated by various types of chips poses an obstacle to the reliability and performance of heterogeneous integration(HI)packaging technology,leading to excessive cooling that reduces the system’s energy efficiency.We propose a framework to optimize the impinging nozzle arrangement for energyefficient uniform jet cooling of HI packages.This framework utilizes a convolutional neural network(CNN)-based surrogate model that learns nozzle arrangements and heating scenarios to predict the temperature nonuniformity of the package.The potential optimal designs predicted by the CNN are used for re-training through an experimentally validated numerical analysis model.Combined with this active learning approach,the proposed hierarchical exploration algorithm accelerates optimization by gradually scaling the design options.The optimization results showed an increase in cooling uniformity by up to 39.5%,while the cooling COP improved by up to 200%across the investigated flow rate range(3–8 L/min).The optimized designs were experimentally validated with a maximum error of 4.34%in average thermal resistance.Our framework achieved up to 45.7%data savings compared to the random sampling-based approach.Along with a discussion on applying the CNN model to untrained conditions to further enhance optimization efficiency,our work represents a novel approach to broadly address the rapidly evolving diverse heating scenarios of HI,contributing to improved cooling energy efficiency in data centers and enhanced reliability of high-performance processors.展开更多
The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal c...The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.展开更多
Gastrointestinal cancers,including esophageal,gastric,colorectal,liver,gallbladder,cholangiocarcinoma,and pancreatic cancers,pose a significant global health challenge due to their high mortality rates and poor progno...Gastrointestinal cancers,including esophageal,gastric,colorectal,liver,gallbladder,cholangiocarcinoma,and pancreatic cancers,pose a significant global health challenge due to their high mortality rates and poor prognosis,particularly when diagnosed at advanced stages.These malignancies,characterized by diverse clinical presentations and etiologies,require innovative approaches for improved management.Bayesian networks(BN)have emerged as a powerful tool in this field,offering the ability to manage uncertainty,integrate heterogeneous data sources,and support clinical decision-making.This review explores the application of BN in addressing critical challenges in gastrointestinal cancers,including the identification of risk factors,early detection,treatment optimization,and prognosis prediction.By integrating genetic predispositions,lifestyle factors,and clinical data,BN hold the potential to enhance survival rates and improve quality of life through personalized treatment strategies.Despite their promise,the widespread adoption of BN is hindered by challenges such as data quality limitations,computational complexities,and the need for greater clinical acceptance.The review concludes with future research directions,emphasizing the development of advanced BN algorithms,the integration of multi-omics data,and strategies to ensure clinical applicability,aiming to fully realize the potential of BN in personalized medicine for gastrointestinal cancers.展开更多
The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Ae...The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Aerial networking provides a prom⁃ising solution to flexible,scalable,low-cost and reliable coverage for wireless devices.The integration of aerial network and terrestrial network has been an inevitable paradigm in the 6G era.However,energy-efficient communications and networking among aerial net⁃work and terrestrial network face great challenges.This paper is dedicated to discussing green communications of the air-ground integrated heterogeneous network(AGIHN).We first provide a brief introduction to the characteristics of AGIHN in 6G networks.Further,we analyze the challenges of green AGIHN from the aspects of green terrestrial networks and green aerial networks.Finally,several solutions to and key technologies of the green AGIHN are discussed.展开更多
The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordan...The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordance with the demands of third generation Micro/Mini-LED devices.Many functional units(e.g.,display units,storage units,sensing units,com-munication units and computing units)are integrated into one display main-board based on the semiconductor technology and electronic packaging.The advantages and details of miniaturization,intelligent,advanced integration,signal integrity with low latency performance,process compatibility and reliability are introduced.The interconnection requirements and design of the HiSID model with artificial intelligence are also summarized in this paper.It will provide technical guidance and references for the commercial application,core technology,and breakthrough direction of the HiSID module in display technology.展开更多
A heterogeneous wireless sensor network comprises a number of inexpensive energy constrained wireless sensor nodes which collect data from the sensing environment and transmit them toward the improved cluster head in ...A heterogeneous wireless sensor network comprises a number of inexpensive energy constrained wireless sensor nodes which collect data from the sensing environment and transmit them toward the improved cluster head in a coordinated way. Employing clustering techniques in such networks can achieve balanced energy consumption of member nodes and prolong the network lifetimes.In classical clustering techniques, clustering and in-cluster data routes are usually separated into independent operations. Although separate considerations of these two issues simplify the system design, it is often the non-optimal lifetime expectancy for wireless sensor networks. This paper proposes an integral framework that integrates these two correlated items in an interactive entirety. For that,we develop the clustering problems using nonlinear programming. Evolution process of clustering is provided in simulations. Results show that our joint-design proposal reaches the near optimal match between member nodes and cluster heads.展开更多
The integration of different heterogeneous access networks is one of the remarkable characteristics of the next generation network,in which users with multi-network interface terminals can independently select access ...The integration of different heterogeneous access networks is one of the remarkable characteristics of the next generation network,in which users with multi-network interface terminals can independently select access network to obtain the most desired service.A kind of unified quantification model of non-monotone quality of service(QoS) and a model of non-cooperative game between users and networks are proposed for heterogeneous network access selection.An optimal network pricing mechanism could be formulated by using a novel strategy which is used in this non-cooperative game model to balance the interests of both the users and the networks.This access network selection mechanism could select the most suitable network for users,and it also could provide the basis when formulating QoS standards in heterogeneous integrated networks.The simulation results show that this network selection decision-making algorithm can meet the users' demand for different levels service in different scenes and it can also avoid network congestion caused by unbalanced load.展开更多
Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications....Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.展开更多
High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full us...High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full use of the advant-ages of organic electro-optic(OEO)materials(e.g.high electro-optic coefficient,fast response speed,high bandwidth,easy pro-cessing/integration and low cost)have attracted considerable attention.In this paper,we introduce a series of high-perform-ance OEO materials that exhibit good properties in electro-optic activity and thermal stability.In addition,the recent progress of organic-based hybrid electro-optic devices is reviewed,including photonic crystal-organic hybrid(PCOH),silicon-organic hy-brid(SOH)and plasmonic-organic hybrid(POH)modulators.A high-performance integrated optical platform based on OEO ma-terials is a promising solution for growing high speeds and low power consumption in compact sizes.展开更多
Alpha-synuclein plays an important role in Parkinson's disease(PD).The current study of alpha-synuclein mainly concentrates at the gene level.However, it is found that the study at the protein level has special si...Alpha-synuclein plays an important role in Parkinson's disease(PD).The current study of alpha-synuclein mainly concentrates at the gene level.However, it is found that the study at the protein level has special significance.Meanwhile, there is free information on the Internet, such as databases and algorithms of protein-protein interactions(PPIs).In this paper, a novel method which integrates distributed heterogeneous data sources and algorithms to predict PPIs for alpha-synuclein in silico is proposed.The PPIs generated by the method take advantage of various experimental data, and indicate new information about PPIs for alpha-synuclein.In the end of this paper, the result illustrates that the method is practical.It is hoped that the prediction result obtained by this method can provide guidance for biological experiments of PPIs for alpha-synuclein to reveal possible mechanisms of PD.展开更多
Driven by“More than Moore”,miniaturization and multifunctional integration of micro-energy devices are emerging as critical pathways for next-generation compact microsystems.This study proposes a sensing-in-Energy(S...Driven by“More than Moore”,miniaturization and multifunctional integration of micro-energy devices are emerging as critical pathways for next-generation compact microsystems.This study proposes a sensing-in-Energy(SiE)microdevice that immerses an inertial switch in a parallel-connected supercapacitor’s electrolyte,enabling simultaneous impact sensing and stable energy supply under extremely high gravitational acceleration(high-g)shocks(over 10,000 g).The SiE microdevice can be viewed as a high-amplitude shock sensor(raw signal peak>50 mV)under high-frequency perspective,and a shock-resistant electrochemical power source(voltage fluctuation<2%)under low-frequency perspective,while energy consumption reduces over 99.9%compared with conventional high-g sensor due to its event-driven mechanism.Sensing performance is boosted>50%using multiphysics model combined with machine learning algorithm.Furthermore,a fuze microsystem was built based on SiE microdevice,achieving 150μs-level ultrafast response.Three-layer penetration experiments have verified the engineering application of SiE microdevice and its fuze microsystem in smart munitions domains,providing a novel paradigm for heterogeneous microsystem in high-dynamic environments.展开更多
With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore&#...With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.展开更多
Multimodal perception is a foundational technology for human perception in complex environments.These environments often involve various interference conditions and sensor technical limitations that constrain the info...Multimodal perception is a foundational technology for human perception in complex environments.These environments often involve various interference conditions and sensor technical limitations that constrain the information capture capabilities of single-modality sensors.Multimodal perception addresses these by integrating complementary multisource heterogeneous information,providing a solution for perceiving complex environments.This technology spans across fields such as autonomous driving,industrial detection,biomedical engineering,and remote sensing.However,challenges arise due to multisensor misalignment,inadequate appearance forms,and perception-oriented issues,which complicate the corresponding relationship,information representation,and task-driven fusion.In this context,the advancement of artificial intelligence(AI)has driven the development of information fusion,offering a new perspective on tackling these challenges.1 AI leverages deep neural networks(DNNs)with gradient descent optimization to learn statistical regularities from multimodal data.By examining the entire process of multimodal information fusion,we can gain deeper insights into AI’s working mechanisms and enhance our understanding of AI perception in complex environments.展开更多
The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems,wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low c...The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems,wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low cost,high reliability, and low power consumption, thanks to semiconductor technology. Mode-locked lasers based on silicon photonics advance these qualities by the use of highly advanced silicon manufacturing technology. This paper will begin by giving an overview of mode-locked laser diode literature, and then focus on mode-locked lasers on silicon. The dependence of mode-locked laser performance on design details is presented.展开更多
基金Project supported by the National Innovative Training Program for College Students of China(Grant No.2023069)the University Research and Innovation Project of the National University of Defense Technology。
文摘Silicon nitride photonics has emerged as a promising integrated optical platform due to its broad transparency window,low optical loss,and mature fabrication technology.However,the inherent centrosymmetric crystal structure of silicon nitride fundamentally restricts its applications in second-order nonlinear optical processes.Monolayer transition metal dichalcogenides,particularly tungsten disulfide(WS_(2)),exhibit strong second-order nonlinear responses,making them ideal candidates for nonlinear photonic applications.Herein,we demonstrate a heterogeneously integrated platform combining silicon nitride waveguides with chemical vapor deposition(CVD)-grown monolayer WS_(2),enabling second harmonic generation.A specially designed silica cladding featuring gentle-slope profile on silicon nitride strip waveguides facilitates the integration of centimeter-scale WS_(2)film with photonic circuits.This approach provides a robust solution for incorporating second-order nonlinearity into silicon nitride photonic systems.The demonstrated platform holds significant potential for advancing quantum networks,visible-light lasers,and integrated optical modulation/detection systems.
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2021YFB2206504)the National Natural Science Foundation of China(Grant No.62235017)the China Postdoctoral Science Foundation(Grant No.2021M703125).
文摘The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.
文摘In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.
基金the National Natural Science Foundation of China(Grant No.61434006).
文摘Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.
基金supported by National Key R&D Program of China(2020YFB2008704)the National Natural Science Foundation of China(62004114 and 62174098)+1 种基金Beijing Municipal Science and Technology Commission(Z221100005822011)The Tsinghua-Foshan Innovation Special Fund(2021THFS0215)。
文摘As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.
基金the National Key Research and Development Program of China(Grant No.2017YFE0131300)the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,61875220,and 61804157)+6 种基金the Frontier Science Key Program of Chinese Academy of Sciences(Grant Nos.QYZDYSSW-JSC032 and ZDBS-LY-JSC009)the Chinese–Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Shanghai Science and Technology Innovation Action Plan Program,China(Grant No.17511106202)the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600)the Shanghai Youth Top Talent Program,Shanghai Sailing Program,China(Grant Nos.19YF1456200 and 19YF1456400)the K.C.Wong Education Foundation,China(Grant No.GJTD2019-11)the NCBiR within the Polish–China(Grant No.WPC/130/NIR-Si/2018)。
文摘Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).
基金supported by the Basic Science Research Program(Grant No.2022R1A2C3011684)of the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT,Koreathe International Cooperative R&D Program(Grant No.RS-2024-00436521)+1 种基金the Korea Institute of Energy Technology Evaluation and Planning(KETEP)funded by the Ministry of Trade,Industry&Energy,Koreasupported by Samsung Electronics Co.,Ltd.Research Program.
文摘The imbalance in heat power generated by various types of chips poses an obstacle to the reliability and performance of heterogeneous integration(HI)packaging technology,leading to excessive cooling that reduces the system’s energy efficiency.We propose a framework to optimize the impinging nozzle arrangement for energyefficient uniform jet cooling of HI packages.This framework utilizes a convolutional neural network(CNN)-based surrogate model that learns nozzle arrangements and heating scenarios to predict the temperature nonuniformity of the package.The potential optimal designs predicted by the CNN are used for re-training through an experimentally validated numerical analysis model.Combined with this active learning approach,the proposed hierarchical exploration algorithm accelerates optimization by gradually scaling the design options.The optimization results showed an increase in cooling uniformity by up to 39.5%,while the cooling COP improved by up to 200%across the investigated flow rate range(3–8 L/min).The optimized designs were experimentally validated with a maximum error of 4.34%in average thermal resistance.Our framework achieved up to 45.7%data savings compared to the random sampling-based approach.Along with a discussion on applying the CNN model to untrained conditions to further enhance optimization efficiency,our work represents a novel approach to broadly address the rapidly evolving diverse heating scenarios of HI,contributing to improved cooling energy efficiency in data centers and enhanced reliability of high-performance processors.
基金supported by the funding from National Natural Science Foundation of China(Grants No.61851406,61874128,and U1732268)Frontier Science Key Program of CAS(Grant No.QYZDY-SSWJSC032)+2 种基金Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11)Shenzhen Science and Technology Innovation Program(Grant No.JCYJ20190806142614541).
文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.
基金Supported by Open Funds for Shaanxi Provincial Key Laboratory of Infection and Immune Diseases,No.2023-KFMS-1.
文摘Gastrointestinal cancers,including esophageal,gastric,colorectal,liver,gallbladder,cholangiocarcinoma,and pancreatic cancers,pose a significant global health challenge due to their high mortality rates and poor prognosis,particularly when diagnosed at advanced stages.These malignancies,characterized by diverse clinical presentations and etiologies,require innovative approaches for improved management.Bayesian networks(BN)have emerged as a powerful tool in this field,offering the ability to manage uncertainty,integrate heterogeneous data sources,and support clinical decision-making.This review explores the application of BN in addressing critical challenges in gastrointestinal cancers,including the identification of risk factors,early detection,treatment optimization,and prognosis prediction.By integrating genetic predispositions,lifestyle factors,and clinical data,BN hold the potential to enhance survival rates and improve quality of life through personalized treatment strategies.Despite their promise,the widespread adoption of BN is hindered by challenges such as data quality limitations,computational complexities,and the need for greater clinical acceptance.The review concludes with future research directions,emphasizing the development of advanced BN algorithms,the integration of multi-omics data,and strategies to ensure clinical applicability,aiming to fully realize the potential of BN in personalized medicine for gastrointestinal cancers.
基金This work was supported by National Natural Science Foundation of Chi⁃na under Grant Nos.61901051 and 61932005.
文摘The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Aerial networking provides a prom⁃ising solution to flexible,scalable,low-cost and reliable coverage for wireless devices.The integration of aerial network and terrestrial network has been an inevitable paradigm in the 6G era.However,energy-efficient communications and networking among aerial net⁃work and terrestrial network face great challenges.This paper is dedicated to discussing green communications of the air-ground integrated heterogeneous network(AGIHN).We first provide a brief introduction to the characteristics of AGIHN in 6G networks.Further,we analyze the challenges of green AGIHN from the aspects of green terrestrial networks and green aerial networks.Finally,several solutions to and key technologies of the green AGIHN are discussed.
文摘The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordance with the demands of third generation Micro/Mini-LED devices.Many functional units(e.g.,display units,storage units,sensing units,com-munication units and computing units)are integrated into one display main-board based on the semiconductor technology and electronic packaging.The advantages and details of miniaturization,intelligent,advanced integration,signal integrity with low latency performance,process compatibility and reliability are introduced.The interconnection requirements and design of the HiSID model with artificial intelligence are also summarized in this paper.It will provide technical guidance and references for the commercial application,core technology,and breakthrough direction of the HiSID module in display technology.
基金supported by National Natural Science Foundation of China(Nos.61304131 and 61402147)Grant of China Scholarship Council(No.201608130174)+2 种基金Natural Science Foundation of Hebei Province(Nos.F2016402054 and F2014402075)the Scientific Research Plan Projects of Hebei Education Department(Nos.BJ2014019,ZD2015087 and QN2015046)the Research Program of Talent Cultivation Project in Hebei Province(No.A2016002023)
文摘A heterogeneous wireless sensor network comprises a number of inexpensive energy constrained wireless sensor nodes which collect data from the sensing environment and transmit them toward the improved cluster head in a coordinated way. Employing clustering techniques in such networks can achieve balanced energy consumption of member nodes and prolong the network lifetimes.In classical clustering techniques, clustering and in-cluster data routes are usually separated into independent operations. Although separate considerations of these two issues simplify the system design, it is often the non-optimal lifetime expectancy for wireless sensor networks. This paper proposes an integral framework that integrates these two correlated items in an interactive entirety. For that,we develop the clustering problems using nonlinear programming. Evolution process of clustering is provided in simulations. Results show that our joint-design proposal reaches the near optimal match between member nodes and cluster heads.
基金Supported by the National Natural Science Foundation of China(No.61272120)the Science and Technology Project of Xi'an(No.CXY1117(5))
文摘The integration of different heterogeneous access networks is one of the remarkable characteristics of the next generation network,in which users with multi-network interface terminals can independently select access network to obtain the most desired service.A kind of unified quantification model of non-monotone quality of service(QoS) and a model of non-cooperative game between users and networks are proposed for heterogeneous network access selection.An optimal network pricing mechanism could be formulated by using a novel strategy which is used in this non-cooperative game model to balance the interests of both the users and the networks.This access network selection mechanism could select the most suitable network for users,and it also could provide the basis when formulating QoS standards in heterogeneous integrated networks.The simulation results show that this network selection decision-making algorithm can meet the users' demand for different levels service in different scenes and it can also avoid network congestion caused by unbalanced load.
基金supported by grants from the National Natural Science Foundation of China(62293522,62293521,62204255 and 62234007).
文摘Due to its high critical breakdown electrical field and the availability of large-scale single crystal substrates,Gallium oxide(Ga_(2)O_(3))holds great promise for power electronic and radio frequency(RF)applications.While significant advancements have been made in Ga_(2)O_(3)material and device research,there are still challenges related to its ultra-low thermal conductivity and the lack of effective p-type doping methods.These limitations hinder the fabrication of complex device structures and the enhancement of device performance.This review aims to provide an introduction to the research development of Ga_(2)O_(3)heterogeneous and heterojunction power devices based on heterogeneous integration technology.By utilizing ion-cutting and wafer bonding techniques,heterogeneous substrates with high thermal conductivity have been realized,offering a viable solution to overcome the thermal limitations of Ga_(2)O_(3).Compared to Ga_(2)O_(3)bulk devices,Ga_(2)O_(3)devices fabricated on heterogeneous substrates integrated with SiC or Si exhibit superior thermal properties.Power diodes and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions on heterogeneous substrates have demonstrated outstanding electrical characteristics,presenting a feasible method for the development of bipolar devices.The technologies of heterogeneous integration and heterojunction address critical issues related to Ga_(2)O_(3),thereby advancing the commercial applications of Ga_(2)O_(3)devices in power and RF fields.By integrating Ga_(2)O_(3)with other materials and leveraging heterojunction interfaces,researchers and engineers have made significant progress in improving device performance and overcoming limitations.These advancements pave the way for the wider adoption of Ga_(2)O_(3)-based devices in various power and RF applications.
基金the National Natural Science Foundation of China(No.62175267)the Beijing Municipal Natural Science Foundation(No.4192061)+1 种基金the Fundamental Research Funds for the Central Universities(2020MDJC13)the Beijing Talents Foundation(2018000021223ZK45)for the financial support.
文摘High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full use of the advant-ages of organic electro-optic(OEO)materials(e.g.high electro-optic coefficient,fast response speed,high bandwidth,easy pro-cessing/integration and low cost)have attracted considerable attention.In this paper,we introduce a series of high-perform-ance OEO materials that exhibit good properties in electro-optic activity and thermal stability.In addition,the recent progress of organic-based hybrid electro-optic devices is reviewed,including photonic crystal-organic hybrid(PCOH),silicon-organic hy-brid(SOH)and plasmonic-organic hybrid(POH)modulators.A high-performance integrated optical platform based on OEO ma-terials is a promising solution for growing high speeds and low power consumption in compact sizes.
基金supported by the National Basic Research Program of China (Grant No.2006CB500702)the Shanghai Lead-ing Academic Discipline Project (Grant No.J50103)Shanghai University Systems Biology Reasearch Funding (GrantNo.SBR08001)
文摘Alpha-synuclein plays an important role in Parkinson's disease(PD).The current study of alpha-synuclein mainly concentrates at the gene level.However, it is found that the study at the protein level has special significance.Meanwhile, there is free information on the Internet, such as databases and algorithms of protein-protein interactions(PPIs).In this paper, a novel method which integrates distributed heterogeneous data sources and algorithms to predict PPIs for alpha-synuclein in silico is proposed.The PPIs generated by the method take advantage of various experimental data, and indicate new information about PPIs for alpha-synuclein.In the end of this paper, the result illustrates that the method is practical.It is hoped that the prediction result obtained by this method can provide guidance for biological experiments of PPIs for alpha-synuclein to reveal possible mechanisms of PD.
基金granted by the Young Elite Scientists Sponsorship Program of CAST(No.2023QNRC001)the National Key Research and Development Program of China(No.2023YFB3211205).
文摘Driven by“More than Moore”,miniaturization and multifunctional integration of micro-energy devices are emerging as critical pathways for next-generation compact microsystems.This study proposes a sensing-in-Energy(SiE)microdevice that immerses an inertial switch in a parallel-connected supercapacitor’s electrolyte,enabling simultaneous impact sensing and stable energy supply under extremely high gravitational acceleration(high-g)shocks(over 10,000 g).The SiE microdevice can be viewed as a high-amplitude shock sensor(raw signal peak>50 mV)under high-frequency perspective,and a shock-resistant electrochemical power source(voltage fluctuation<2%)under low-frequency perspective,while energy consumption reduces over 99.9%compared with conventional high-g sensor due to its event-driven mechanism.Sensing performance is boosted>50%using multiphysics model combined with machine learning algorithm.Furthermore,a fuze microsystem was built based on SiE microdevice,achieving 150μs-level ultrafast response.Three-layer penetration experiments have verified the engineering application of SiE microdevice and its fuze microsystem in smart munitions domains,providing a novel paradigm for heterogeneous microsystem in high-dynamic environments.
基金supported by the National Natural Science Foundation of China(Nos.52221001,U19A2090,62090035,52172140,51902098,62175061)the Key Program of the Hunan Provincial Science and Technology Department(Nos.2019XK2001,2020XK2001)+3 种基金the International Science and Technology Innovation Cooperation Base of Hunan Province(No.2018WK4004)the Outstanding Scholarship Program of Hunan Province(No.2021JJ10021)the Science and Technology Innovation Program of Hunan Province(No.2021RC3061)the Natural Science Foundation of Hunan Province(Nos.2022JJ30167,2021JJ20016).
文摘With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.
文摘Multimodal perception is a foundational technology for human perception in complex environments.These environments often involve various interference conditions and sensor technical limitations that constrain the information capture capabilities of single-modality sensors.Multimodal perception addresses these by integrating complementary multisource heterogeneous information,providing a solution for perceiving complex environments.This technology spans across fields such as autonomous driving,industrial detection,biomedical engineering,and remote sensing.However,challenges arise due to multisensor misalignment,inadequate appearance forms,and perception-oriented issues,which complicate the corresponding relationship,information representation,and task-driven fusion.In this context,the advancement of artificial intelligence(AI)has driven the development of information fusion,offering a new perspective on tackling these challenges.1 AI leverages deep neural networks(DNNs)with gradient descent optimization to learn statistical regularities from multimodal data.By examining the entire process of multimodal information fusion,we can gain deeper insights into AI’s working mechanisms and enhance our understanding of AI perception in complex environments.
基金Defense Advanced Research Projects Agency(DARPA)EPHI and DODOS contracts
文摘The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems,wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low cost,high reliability, and low power consumption, thanks to semiconductor technology. Mode-locked lasers based on silicon photonics advance these qualities by the use of highly advanced silicon manufacturing technology. This paper will begin by giving an overview of mode-locked laser diode literature, and then focus on mode-locked lasers on silicon. The dependence of mode-locked laser performance on design details is presented.
