In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integ...In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.展开更多
The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2μm×100μm aperture and a compact heterothyristor switch is demon...The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2μm×100μm aperture and a compact heterothyristor switch is demonstrated.The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V.The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W,and the turn-on delay between the elements of the composite aperture was 160 ps.展开更多
基金supported by National High Technology Research and Development Program of China(863 Program)under Grant No.2015AA042603the 111 Project under Grant No.B07014Nanchang Institute for Microtechnology of Tianjin University
文摘In this work,a monolithic oscillator chip is heterogeneously integrated by a film bulk acoustic resonator(FBAR)and a complementary metal-oxide-semiconductor(CMOS)chip using FlexMEMS technology.In the 3 D-stacked integrated chip,the thin-film FBAR sits directly over the CMOS chip,between which a 4μm-thick SU-8 layer provides a robust adhesion and acoustic reflection cavity.The proposed system-on-chip(SoC)integration features a simple fabrication process,small size,and excellent performance.The oscillator outputs 2.024 GHz oscillations of-13.79 dB m and exhibits phase noises of-63,-120,and-136 dB c/Hz at 1 kHz,100 kHz,and far-from-carrier offset,respectively.FlexMEMS technology guarantees compact and accurate assembly,process compatibility,and high performance,thereby demonstrating its great potential in SoC hetero-integration applications.
文摘The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2μm×100μm aperture and a compact heterothyristor switch is demonstrated.The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V.The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W,and the turn-on delay between the elements of the composite aperture was 160 ps.
