A recently developed B-spline algorithm is extended and utilized to calculate excited states of He atoms in the presence of strong magnetic fields.Binding energies are presented for He in the five excited atomic state...A recently developed B-spline algorithm is extended and utilized to calculate excited states of He atoms in the presence of strong magnetic fields.Binding energies are presented for He in the five excited atomic states 210-+,110-,210-,11(-1)+,and 2 1(1) + with magnetic field strength ranging from 0.0001 to 10 a.u.The obtained energies are compared with available theoretical data,and found to be in good agreement.We investigate influence of magnetic fields on atomic structures of multielectron atoms,and illustrate that how electron probability density distributions change with increasing magnetic field strength.The current approach is directly applicable to simulations of discrete spectra for He atoms in the atmospheres of magnetized white dwarf stars.展开更多
Cross-section ratios σTI/σSC of transfer ionization （TI） to single capture （SC） of C^q＋- and O^q＋-He （q = 1 - 3） collisions in the energy range of 15-440 keV/u （0.8-4.2 vBohr） are experimentally determined...Cross-section ratios σTI/σSC of transfer ionization （TI） to single capture （SC） of C^q＋- and O^q＋-He （q = 1 - 3） collisions in the energy range of 15-440 keV/u （0.8-4.2 vBohr） are experimentally determined. It is shown that σTI/σSC strongly depends on the projectile velocity, and there is a maximum for E（keV/u）/q1/2 ≈, 150. Combining the Bohr-Lindhard model and the statistical model, a theoretical estimate is presented, in reasonable agreement with the experimental data when E（keV//u）/q^1/2 〉 35.展开更多
钼(Mo)材料被作为托卡马克装置中面向等离子体材料的候选材料被广泛研究,因此研究钼材料的辐照损伤行为对于认识聚变堆关键材料的辐照损伤机制具有重要意义。采用低能(100 e V)、大流强(约1021 ions·m-2·s-1)He+在600 oC对钼...钼(Mo)材料被作为托卡马克装置中面向等离子体材料的候选材料被广泛研究,因此研究钼材料的辐照损伤行为对于认识聚变堆关键材料的辐照损伤机制具有重要意义。采用低能(100 e V)、大流强(约1021 ions·m-2·s-1)He+在600 oC对钼样品进行辐照实验,考察了离子辐照剂量和退火温度变化对钼材料的表面损伤作用。分别采用扫描电镜(Scanning Electron Microscope,SEM)和无损伤的导电原子力显微镜(Conductive Atomic Force Microscopy,CAFM)检测技术对辐照前后样品的微观形貌、微结构演化以及内表面缺陷分布等进行了对比研究。结果表明,He+辐照会诱导钼样品晶粒尺寸的增加,钼材料表面的晶粒取向会影响辐照缺陷的分布。这对于探索抑制材料辐照损伤的新方法具有重要的指导意义。展开更多
基金Supported by the National Science Foundation of USA under Grant No. 0630370National Natural Science Foundation of Chinaunder Grant Nos. 90403028 and 11074260
文摘A recently developed B-spline algorithm is extended and utilized to calculate excited states of He atoms in the presence of strong magnetic fields.Binding energies are presented for He in the five excited atomic states 210-+,110-,210-,11(-1)+,and 2 1(1) + with magnetic field strength ranging from 0.0001 to 10 a.u.The obtained energies are compared with available theoretical data,and found to be in good agreement.We investigate influence of magnetic fields on atomic structures of multielectron atoms,and illustrate that how electron probability density distributions change with increasing magnetic field strength.The current approach is directly applicable to simulations of discrete spectra for He atoms in the atmospheres of magnetized white dwarf stars.
基金Supported by the National Natural Science Foundation of China with Grant Nos 10704030 and 10304019, and the Natural Science Foundation of Gansu Province under Grant No 0710RJZA014.
文摘Cross-section ratios σTI/σSC of transfer ionization （TI） to single capture （SC） of C^q＋- and O^q＋-He （q = 1 - 3） collisions in the energy range of 15-440 keV/u （0.8-4.2 vBohr） are experimentally determined. It is shown that σTI/σSC strongly depends on the projectile velocity, and there is a maximum for E（keV/u）/q1/2 ≈, 150. Combining the Bohr-Lindhard model and the statistical model, a theoretical estimate is presented, in reasonable agreement with the experimental data when E（keV//u）/q^1/2 〉 35.
文摘钼(Mo)材料被作为托卡马克装置中面向等离子体材料的候选材料被广泛研究,因此研究钼材料的辐照损伤行为对于认识聚变堆关键材料的辐照损伤机制具有重要意义。采用低能(100 e V)、大流强(约1021 ions·m-2·s-1)He+在600 oC对钼样品进行辐照实验,考察了离子辐照剂量和退火温度变化对钼材料的表面损伤作用。分别采用扫描电镜(Scanning Electron Microscope,SEM)和无损伤的导电原子力显微镜(Conductive Atomic Force Microscopy,CAFM)检测技术对辐照前后样品的微观形貌、微结构演化以及内表面缺陷分布等进行了对比研究。结果表明,He+辐照会诱导钼样品晶粒尺寸的增加,钼材料表面的晶粒取向会影响辐照缺陷的分布。这对于探索抑制材料辐照损伤的新方法具有重要的指导意义。
