We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that...We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(No60876003)the Chinese Academy of Sciences(No Y072011000)+1 种基金the Beijing Municipal Science&Technology Commission(NoD09080300500903)the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)
文摘We report the latest results of the 3C-SiC layer growth on Si（100）substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system with a rotating susceptor that was designed to support up to three 50 mm-diameter wafers.3C-SiC film properties of the intrawafer and the wafer-to-wafer,including crystalline morphologies and electronics,are characterized systematically. Intra-wafer layer thickness and sheet resistance uniformity（σ/mean）of～3.40%and～5.37%have been achieved in the 3×50 mm configuration.Within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 4%and 4.24%,respectively.
