High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric pro...High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric properties consistency of the inter-chip performance have an important influence on the stability and repeatability of the detection. In this research, we fabricated GaAs/AlGaAs HEMT biosensors of different epitaxial structures and device structures to study the electric properties consistency. We study the relationship between channel size and consistency. We investigated the distribution of device current with location on 2 inch GaAs wafer. Based on the studies, the optimal device of a GaAs HEMT biosensor is an A-type epitaxial structure, and a U-type device structure, L = 40μm, W= 200 μm.展开更多
The aim of this research work is to analyze the surface characteristics of an improved AlGaN/GaN HEMT biosensor. The investigation leads to analyze the transistor performance to detect human MIG with the help of an an...The aim of this research work is to analyze the surface characteristics of an improved AlGaN/GaN HEMT biosensor. The investigation leads to analyze the transistor performance to detect human MIG with the help of an analytical model and measured data. The surface engineering includes the effects of repeatability, influence of the substrate, threshold shifting, and floating gate configuration. A numerical method is developed using the charge-control model and the results are used to observe the changes in the device channel at the quantum level. A Self-Assembled Monolayer (SAM) is formed at the gate electrode to allow immobilization and reliable cross-linking between the surface of the gate electrode and the antibody. The amperometric detection is realized solely by varying surface charges induced by the biomolecule through capacitive coupling. The equivalent DC bias is 6.99436 × 10<sup>-20</sup> V which is represented by the total number of charges in the MIG sample. The steady state current of the clean device is 66.89 mA. The effect of creation and immobilization of the protein on the SAM layer increases the current by 80 - 150 μA which ensures that successful induction of electrons is exhibited.展开更多
基金Project supported by the National Key Research and Development Program of China(No.2017YFB0405400)the Open Research Fund Program of the State Key Laboratory of Virology of China(No.2017IOV002)+1 种基金the National Natural Science Foundation of China(Nos.61274049,61404130,61574140)the Shenzhen Science and Technology Innovation Commission(No.JSGG20160608100922614)
文摘High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric properties consistency of the inter-chip performance have an important influence on the stability and repeatability of the detection. In this research, we fabricated GaAs/AlGaAs HEMT biosensors of different epitaxial structures and device structures to study the electric properties consistency. We study the relationship between channel size and consistency. We investigated the distribution of device current with location on 2 inch GaAs wafer. Based on the studies, the optimal device of a GaAs HEMT biosensor is an A-type epitaxial structure, and a U-type device structure, L = 40μm, W= 200 μm.
文摘The aim of this research work is to analyze the surface characteristics of an improved AlGaN/GaN HEMT biosensor. The investigation leads to analyze the transistor performance to detect human MIG with the help of an analytical model and measured data. The surface engineering includes the effects of repeatability, influence of the substrate, threshold shifting, and floating gate configuration. A numerical method is developed using the charge-control model and the results are used to observe the changes in the device channel at the quantum level. A Self-Assembled Monolayer (SAM) is formed at the gate electrode to allow immobilization and reliable cross-linking between the surface of the gate electrode and the antibody. The amperometric detection is realized solely by varying surface charges induced by the biomolecule through capacitive coupling. The equivalent DC bias is 6.99436 × 10<sup>-20</sup> V which is represented by the total number of charges in the MIG sample. The steady state current of the clean device is 66.89 mA. The effect of creation and immobilization of the protein on the SAM layer increases the current by 80 - 150 μA which ensures that successful induction of electrons is exhibited.
