The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
±1 100 k V直流U型结构穿墙套管具有机械性能好、便于安装等优点,但U型结构穿墙套管端部均压环对墙体距离与对地距离相近,在设计中需要考虑这两类间隙的综合绝缘问题。因此,为保证±1 100 k V U型穿墙套管运行中的外绝缘安全,...±1 100 k V直流U型结构穿墙套管具有机械性能好、便于安装等优点,但U型结构穿墙套管端部均压环对墙体距离与对地距离相近,在设计中需要考虑这两类间隙的综合绝缘问题。因此,为保证±1 100 k V U型穿墙套管运行中的外绝缘安全,并系统掌握其电气间隙放电特性,采用均压环和钢架试品模拟±1 100 k V直流U型结构穿墙套管端部均压环对墙和对地电气绝缘间隙,开展了环对墙不同间隙距离、不同对地高度以及典型配置综合间隙操作冲击放电特性试验研究,获得了模拟±1 100 k V U型穿墙套管电气间隙的操作冲击放电特性参数,并结合系统操作过电压水平提出了±1 100 k V直流U型结构穿墙套管最小安全间隙推荐值,在海拔0、500、1 000 m的条件下,最小安全间隙配置取为12.1 m/12.4 m、12.6 m/12.9 m和12.8 m/13.1 m(均压环对阀厅墙体/对地)。展开更多
特高压套管具有较高的地震易损性,是变压器整体结构抗震性能的薄弱环节,其抗震能力直接影响着特高压变电站整体的抗震设防水准。该研究对1支1 100 k V特高压套管进行地震模拟振动台试验,通过输入白噪声随机波和人工标准时程波,测定套管...特高压套管具有较高的地震易损性,是变压器整体结构抗震性能的薄弱环节,其抗震能力直接影响着特高压变电站整体的抗震设防水准。该研究对1支1 100 k V特高压套管进行地震模拟振动台试验,通过输入白噪声随机波和人工标准时程波,测定套管的动力特性和关键部位的应变、加速度等地震响应。试验结果显示,套管瓷件部分最大应力低于瓷质材料破坏值,但套管金属部位安装法兰发生破坏,不满足设计基本地震加速度为3 m/s2的抗震设防要求。试验结果表明:在重视瓷件部分抗震性能的同时,应采取构造连接措施提高套管金属部件的刚度,从而提高设备整体的抗震性能,保证变电站抗震安全。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘±1 100 k V直流U型结构穿墙套管具有机械性能好、便于安装等优点,但U型结构穿墙套管端部均压环对墙体距离与对地距离相近,在设计中需要考虑这两类间隙的综合绝缘问题。因此,为保证±1 100 k V U型穿墙套管运行中的外绝缘安全,并系统掌握其电气间隙放电特性,采用均压环和钢架试品模拟±1 100 k V直流U型结构穿墙套管端部均压环对墙和对地电气绝缘间隙,开展了环对墙不同间隙距离、不同对地高度以及典型配置综合间隙操作冲击放电特性试验研究,获得了模拟±1 100 k V U型穿墙套管电气间隙的操作冲击放电特性参数,并结合系统操作过电压水平提出了±1 100 k V直流U型结构穿墙套管最小安全间隙推荐值,在海拔0、500、1 000 m的条件下,最小安全间隙配置取为12.1 m/12.4 m、12.6 m/12.9 m和12.8 m/13.1 m(均压环对阀厅墙体/对地)。
文摘特高压套管具有较高的地震易损性,是变压器整体结构抗震性能的薄弱环节,其抗震能力直接影响着特高压变电站整体的抗震设防水准。该研究对1支1 100 k V特高压套管进行地震模拟振动台试验,通过输入白噪声随机波和人工标准时程波,测定套管的动力特性和关键部位的应变、加速度等地震响应。试验结果显示,套管瓷件部分最大应力低于瓷质材料破坏值,但套管金属部位安装法兰发生破坏,不满足设计基本地震加速度为3 m/s2的抗震设防要求。试验结果表明:在重视瓷件部分抗震性能的同时,应采取构造连接措施提高套管金属部件的刚度,从而提高设备整体的抗震性能,保证变电站抗震安全。
