This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold ...This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.展开更多
本文模拟了0.25μm SOI NMOS的总剂量效应,I-V特性曲线随总剂量变化趋势与实测曲线一致。在此基础上探讨了器件在不同掺杂浓度、硅膜厚度、埋氧层厚度以及栅氧层厚度等工艺条件下的总剂量效应,分析了一定剂量条件下各项工艺引起器件性...本文模拟了0.25μm SOI NMOS的总剂量效应,I-V特性曲线随总剂量变化趋势与实测曲线一致。在此基础上探讨了器件在不同掺杂浓度、硅膜厚度、埋氧层厚度以及栅氧层厚度等工艺条件下的总剂量效应,分析了一定剂量条件下各项工艺引起器件性能变化的原因。结果表明,源漏高掺杂、薄硅膜、适当厚度的埋氧层和较薄的栅氧层均有利于提高SOI NMOS的抗总剂量效应的能力。这为器件提高抗总剂量效应设计和加固提供了一定的理论依据。展开更多
基金supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007)the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)
文摘This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.
文摘本文模拟了0.25μm SOI NMOS的总剂量效应,I-V特性曲线随总剂量变化趋势与实测曲线一致。在此基础上探讨了器件在不同掺杂浓度、硅膜厚度、埋氧层厚度以及栅氧层厚度等工艺条件下的总剂量效应,分析了一定剂量条件下各项工艺引起器件性能变化的原因。结果表明,源漏高掺杂、薄硅膜、适当厚度的埋氧层和较薄的栅氧层均有利于提高SOI NMOS的抗总剂量效应的能力。这为器件提高抗总剂量效应设计和加固提供了一定的理论依据。
