As a virtual experimental device for analysis and calculation of grown-in microdefects formation in undoped silicon dislocation-free single crystals the software is proposed. The software is built on the basis on diff...As a virtual experimental device for analysis and calculation of grown-in microdefects formation in undoped silicon dislocation-free single crystals the software is proposed. The software is built on the basis on diffusion model of formation, growth and coalescence of grown-in microdefects. Diffusion model describes kinetics of defect structure changes during cooling after growth on crystallization temperature to room temperature. The software allows the use of personal computer to investigate the defect structure of dislocation-free silicon single crystals with a diameter on 30 mm to 400 mm grown by floating-zone and Czochralski methods.展开更多
During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crys tals with various de...During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crys tals with various density of grown-in defects were grown by replacing the popular heater with the com posite heater and changing the popular argon flow into a controlled flow. The experimental results have been explained well by the numeric simulation of argon flow.展开更多
The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experi...The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.展开更多
文摘As a virtual experimental device for analysis and calculation of grown-in microdefects formation in undoped silicon dislocation-free single crystals the software is proposed. The software is built on the basis on diffusion model of formation, growth and coalescence of grown-in microdefects. Diffusion model describes kinetics of defect structure changes during cooling after growth on crystallization temperature to room temperature. The software allows the use of personal computer to investigate the defect structure of dislocation-free silicon single crystals with a diameter on 30 mm to 400 mm grown by floating-zone and Czochralski methods.
基金This work was supported by the National Natural Science Foundation of China (Grant No. 69876006) Hebei Province (Grant No. 002135020).
文摘During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of temperature. Different silicon crys tals with various density of grown-in defects were grown by replacing the popular heater with the com posite heater and changing the popular argon flow into a controlled flow. The experimental results have been explained well by the numeric simulation of argon flow.
基金This work was financially supported by the National Natural Science Foundation of China (No. 60076001 and No.50032010), the Natural Science Foundation of Tianjin (No. 043602511) and the Natural Science Foundation of Hebei Province of China (No. E2005000057).
文摘The morphology and microstructure of flow pattern defects （FPDs） in lightly boron-doped Czochralski-grown silicon （Cz-Si） crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. These results are very useful to investigate FPDs in Cz-Si wafers further and explain the annihilation of FPDs during high-temperature annealing.
