This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and a...This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.展开更多
Trichloroethylene （TCE） pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface...Trichloroethylene （TCE） pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growths the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HC1 on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.展开更多
ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semicond...ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.展开更多
Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor （MOS） structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are ch...Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor （MOS） structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance-voltage （C-V） and current-voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 ℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2, which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors. However, wet thermal annealing at 400 ℃ can decrease the GeOx interlayer thickness at the HfO2/Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeOx in the wet ambient. The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C V characteristics for the as-prepared HfO2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent.展开更多
Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallizatio...Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.展开更多
Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding str...Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2 films are investigated.The x-ray photoelectron spectrum（XPS） indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y doping.The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased.The x-ray diffraction and high resolution transmission electron microscopy（HRTEM） analyses reveal the evolution from monoclinic HfO2 phase towards stabilized cubic HfO2 phase and the preferred orientation of（111） appears with increasing Y content,while pure HfO2 shows the monoclinic phase only.The leakage current and permittivity are determined as a function of the Y content.The best combination of low leakage current of 10-7 A/cm^2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2 ultra-thin film is investigated.展开更多
AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–I...AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.展开更多
Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy ind...Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 90307006）, by the National High Tech. Development Program of China （Grant No 2003AA1Z1370）, and by the State Key Development Program for Basic Research of China （Grant No G2000036500）.
文摘This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376019）.
文摘Trichloroethylene （TCE） pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growths the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HC1 on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.
基金supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB302702)the National Natural Science Foundation of China (Grant No. 60977016)
文摘ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092,61036003,and 60837001)the National Basic Research Program of China (Grant No. 2012CB933503)+1 种基金the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110121110025)the Fundamental Research Funds for the Central Universities,China (Grant No. 2010121056)
文摘Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor （MOS） structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance-voltage （C-V） and current-voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 ℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2, which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors. However, wet thermal annealing at 400 ℃ can decrease the GeOx interlayer thickness at the HfO2/Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeOx in the wet ambient. The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C V characteristics for the as-prepared HfO2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent.
基金supported by National Natural Science Foundation of China (50932001)National Natural Science Foundation of China (51102020,51202013)National Science and Technology Major Project(2009ZX02039-005)
文摘Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51272034 and 51672032)the Fundamental Research Funds for the Central Universities,China(Grant No.DUT17ZD211)
文摘Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si（100） substrates at room temperature using a reactive magnetron sputtering system.The effects of Y content on the bonding structure,crystallographic structure,and electrical properties of Y-doped HfO2 films are investigated.The x-ray photoelectron spectrum（XPS） indicates that the core level peak positions of Hf 4 f and O 1 s shift toward lower energy due to the structure change after Y doping.The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased.The x-ray diffraction and high resolution transmission electron microscopy（HRTEM） analyses reveal the evolution from monoclinic HfO2 phase towards stabilized cubic HfO2 phase and the preferred orientation of（111） appears with increasing Y content,while pure HfO2 shows the monoclinic phase only.The leakage current and permittivity are determined as a function of the Y content.The best combination of low leakage current of 10-7 A/cm^2 at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%.A correlation among Y content,phase evolution and electrical properties of Y-doped HfO2 ultra-thin film is investigated.
基金Project supported by the National Basic Research Program of China(Grant No.2010CB327505)the Advance Research Foundation of China(Grant No.914xxx803-051xxx111)
文摘AHfO2/n–In Al As MOS-capacitor has the advantage of reducing the serious gate leakage current when it is adopted in In As/Al Sb HEMT instead of the conventional Schottky-gate. In this paper, three kinds of Hf O2/n–InAlAs MOS-capacitor samples with different Hf O2 thickness values of 6, 8, and 10 nm are fabricated and used to investigate the interfacial and electrical characteristics. As the thickness is increased, the equivalent dielectric constant ε ox of Hf O2 layer is enhanced and the In AlAsHfO2 interface trap density Ditis reduced, leading to an effective reduction of the leakage current. It is found that the Hf O2 thickness of 10 nm is a suitable value to satisfy the demands of most applications of a HfO2/n–InAlAs MOS-capacitor, with a sufficiently low leakage current compromised with the threshold voltage.
文摘Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.
