We have systematically investigated the structures of Sr-Ge system under pressures up to 200 GPa and found six stable stoichiometric structures,they being Sr_(3)Ge,Sr_(2)Ge,SrGe,SrGe_(2),SrGe_(3),and SrGe_(4).We demon...We have systematically investigated the structures of Sr-Ge system under pressures up to 200 GPa and found six stable stoichiometric structures,they being Sr_(3)Ge,Sr_(2)Ge,SrGe,SrGe_(2),SrGe_(3),and SrGe_(4).We demonstrate the interesting structure evolution behaviors in Sr-Ge system with the increase of germanium content,Ge atoms arranging into isolated anions in Sr_(3)Ge,chains in Sr_(2) Ge,square units in SrGe,trigonal units and hexahedrons in SrGe_(2),cages in SrGe_(3),hexagons and Geg rings in SrGe_(4).The structural diversity produces various manifestations of electronic structures,which is of benefit to electrical transportation.Among them,these novel phases with metallic structures show superconductivity(maximum T_(c)~8.94 K for Pmmn Sr_(3)Ge).Notably,the n-type semiconducting Pnma SrGe_(2) structure exhibits high Seebeck coefficient and excellent electrical conductivity along the y direction,leading to a high ZT value up to 1.55 at 500 K,which can be potential candidates as high-performance thermoelectrics.Our results will enable the development of fundamental science in condensed matter physics and potential applications in novel electronics or thermoelectric materials.展开更多
Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge_2Sb_2Te_5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the...Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge_2Sb_2Te_5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the reflectivity contrast increases from 0%-2% to 14%-16%, which indicates the structure of asdeposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.52102335,11704220,11804184,11974208,and 11804185)the Shandong Provincial Natural Science Foundation,China (Grant Nos.ZR2021MA050,ZR2017BA020,ZR2018PA010,ZR2019MA054,and ZR2017BA012)。
文摘We have systematically investigated the structures of Sr-Ge system under pressures up to 200 GPa and found six stable stoichiometric structures,they being Sr_(3)Ge,Sr_(2)Ge,SrGe,SrGe_(2),SrGe_(3),and SrGe_(4).We demonstrate the interesting structure evolution behaviors in Sr-Ge system with the increase of germanium content,Ge atoms arranging into isolated anions in Sr_(3)Ge,chains in Sr_(2) Ge,square units in SrGe,trigonal units and hexahedrons in SrGe_(2),cages in SrGe_(3),hexagons and Geg rings in SrGe_(4).The structural diversity produces various manifestations of electronic structures,which is of benefit to electrical transportation.Among them,these novel phases with metallic structures show superconductivity(maximum T_(c)~8.94 K for Pmmn Sr_(3)Ge).Notably,the n-type semiconducting Pnma SrGe_(2) structure exhibits high Seebeck coefficient and excellent electrical conductivity along the y direction,leading to a high ZT value up to 1.55 at 500 K,which can be potential candidates as high-performance thermoelectrics.Our results will enable the development of fundamental science in condensed matter physics and potential applications in novel electronics or thermoelectric materials.
文摘Crystallization is induced by pulsed laser irradiation of as-deposited amorphous Ge_2Sb_2Te_5 films. Changes of the irradiated areas have been analyzed with the reflectivity contrast. As laser fluences increasing, the reflectivity contrast increases from 0%-2% to 14%-16%, which indicates the structure of asdeposited films transforms from amorphous to crystalline phases. The process of crystallization driven by the movement and rearrangement of atoms is described. And also the influence of the pulse duration on the threshold of crystallization is discussed, the results show that a lower threshold of crystallization can be produced for as-deposited films irradiated by the laser with short pulse duration. However, by the laser with long pulse duration, crystallization can only be formed with a higher threshold. The crystallization of films by irradiation of laser pulses is studied by Raman spectra.
