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Preparation and characterization of laser-irradiation induced amorphous for Ge_2Sb_2Te_5 phase-change materials
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作者 ZHANG Lei HUANG Huan +4 位作者 YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第12期3404-3408,共5页
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous(L-a) Ge2Sb2Te5(GST) alloy due to the difficulties of collecting diffraction data from high purity speci... It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous(L-a) Ge2Sb2Te5(GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper,by fabricating GST thin films on different substrates,we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope(TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions(PDF) can be achieved on single dots of L-a GST via selected area electron diffraction(SAED) . This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation. 展开更多
关键词 laser-irradiation induced amorphous geesbetes TEM grid laser pulse pair distribution function
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