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Phase changes in Ge_1Sb_2Te_4 films induced by single femtosecond laser pulse irradiation
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作者 黄素梅 孙卓 +2 位作者 靳彩霞 黄士勇 陈奕卫 《中国有色金属学会会刊:英文版》 CSCD 2006年第B01期226-231,共6页
Phase transformations in a Ge1Sb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS–SiO2/80 nm Ge1Sb2Te4/80 nm ZnS–SiO2/0.6 mm polycar... Phase transformations in a Ge1Sb2Te4 system induced by a single femtosecond laser exposure were investigated. The system has a multilayer structure of air/10 nm ZnS–SiO2/80 nm Ge1Sb2Te4/80 nm ZnS–SiO2/0.6 mm polycarbonate substrate. The morphology and contrast of marks written in both amorphous and crystalline backgrounds by single femtosecond pulses were characterized using an optical microscope. X-ray diffraction (XRD) was applied to identify the crystal structures transformed by single 108 fs shots. The characteristics and the conditions of phase transitions in the multilayer structure triggered by single shots were investigated. The pulse energy window for the crystallization in the Ge1Sb2Te4 system was established. The mechanism of phase change triggered by 108 fs laser pulses was discussed. 展开更多
关键词 ge1sb2te4薄膜 单飞秒激光脉冲辐照 相变化 结晶
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硫系相变材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜相变速度及电学输运性质研究
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作者 刘文强 仝亮 +7 位作者 徐岭 刘妮 杨菲 廖远宝 刘东 徐骏 马忠元 陈坤基 《固体电子学研究与进展》 CAS CSCD 北大核心 2011年第3期310-314,共5页
利用磁控溅射方法制备了Ge_1Sb_2Te_4和Ge_2Sb_2Te_5两种相变存贮材料的薄膜。原位X射线衍射(XRD)的结果表明,随着退火温度的升高,Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜都逐步晶化,材料结构发生了从非晶态到面心立方结构、再到六角密堆结构... 利用磁控溅射方法制备了Ge_1Sb_2Te_4和Ge_2Sb_2Te_5两种相变存贮材料的薄膜。原位X射线衍射(XRD)的结果表明,随着退火温度的升高,Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜都逐步晶化,材料结构发生了从非晶态到面心立方结构、再到六角密堆结构的转变。由衍射峰的半宽高可以看出,在达到第一次相变温度后,Ge_2Sb_2Te_5比Ge_1Sb_2Te_4结晶更快。原位变温电阻测量的结果显示,在相同的升温速率下,Ge_2Sb_2Te_5的热致晶化速率更快。而且Ge_2Sb_2Te_5非晶态与晶态的电阻差值更高。故Ge_2Sb_2Te_5比Ge_1Sb_2Te_4更适合作为相变存储器的材料。另外,对两种薄膜的电学输运性质进行了研究,霍尔效应的测量表明,Ge_1Sb_2Te_4材料电导的变化是迁移率和载流子浓度共同作用的结果,而Ge_2Sb_2Te_5材料电导的变化主要是由于载流子浓度的变化引起。 展开更多
关键词 相变存贮材料 Ge_1Sb_2Te_4 Ge_2Sb_2Te_5
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基于相变材料的片上多功能可控红外光开关设计 被引量:3
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作者 李承熹 黄翔 周灵钧 《光通信技术》 2021年第8期42-46,共5页
为了利用相变材料Ge2Se2Sb4Te1(GSST)提高光开关性能,设计了一种基于相变材料的片上多功能可控红外光开关。该器件在刻蚀了纳米孔阵列结构的超紧凑硅波导中填充相变材料GSST,通过调控相变材料的特性,能够实现红外波段不同偏振态信号光... 为了利用相变材料Ge2Se2Sb4Te1(GSST)提高光开关性能,设计了一种基于相变材料的片上多功能可控红外光开关。该器件在刻蚀了纳米孔阵列结构的超紧凑硅波导中填充相变材料GSST,通过调控相变材料的特性,能够实现红外波段不同偏振态信号光的调控。仿真结果表明:对于波长在1750~1880 nm范围内的光,GSST材料为晶态时,TE模式光的偏振消光比最高高达-30.7 dB,而TM模式光的插入损耗最低只有-5.39 dB,当GSST相变材料为非晶态时,二者的插入损耗都可忽略不计。 展开更多
关键词 相变材料Ge2Se2Sb4Te1 红外 光开关 可控 多功能
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Differentiated design strategies toward broadband achromatic and polarizationinsensitive metalenses 被引量:1
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作者 Ximin Tian Yafeng Huang +5 位作者 Junwei Xu Tao Jiang Pei Ding Yaning Xu Shenglan Zhang Zhi-Yuan Li 《Advanced Photonics Nexus》 2023年第5期44-55,共12页
Metasurfaces have emerged as a flexible platform for shaping the electromagnetic field via the tailoring phase,amplitude,and polarization at will.However,the chromatic aberration inherited from building blocks’diffra... Metasurfaces have emerged as a flexible platform for shaping the electromagnetic field via the tailoring phase,amplitude,and polarization at will.However,the chromatic aberration inherited from building blocks’diffractive nature plagues them when used in many practical applications.Current solutions for eliminating chromatic aberration usually rely on searching through many meta-atoms to seek designs that satisfy both phase and phase dispersion preconditions,inevitably leading to intensive design efforts.Moreover,most schemes are commonly valid for incidence with a specific spin state.Here,inspired by the Rayleigh criterion for spot resolution,we present a design principle for broadband achromatic and polarization-insensitive metalenses using two sets of anisotropic nanofins based on phase change material Ge2Sb2Se4Te1.By limiting the rotation angles of all nanofins to either 0 deg or 90 deg,the metalens with a suitable numerical aperture constructed by this fashion allows for achromatic and polarization-insensitive performance across the wavelength range of 4–5μm,while maintaining high focusing efficiency and diffraction-limited performance.We also demonstrate the versatility of our approach by successfully implementing the generation of broadband achromatic and polarization-insensitive focusing optical vortex.This work represents a major advance in achromatic metalenses and may find more applications in compact and chip-scale devices. 展开更多
关键词 metasurfaces broadband achromatic metalenses polarization insensitivity phase change materials of Ge2Sb2Se4Te1
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相变存储材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜的结构和电学特性研究 被引量:5
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作者 廖远宝 徐岭 +5 位作者 杨菲 刘文强 刘东 徐骏 马忠元 陈坤基 《物理学报》 SCIE EI CAS CSCD 北大核心 2010年第9期6563-6568,共6页
采用射频磁控溅射方法制备了两种用于相变存储器的Ge1Sb2Te4和Ge2Sb2Te5相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge1Sb2Te... 采用射频磁控溅射方法制备了两种用于相变存储器的Ge1Sb2Te4和Ge2Sb2Te5相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge1Sb2Te4薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、高度起伏小于10nm的突起;而对于Ge2Sb2Te5薄膜样品,其结构也从非晶态向多晶态转变,但表面形貌的变化不太明显.霍尔效应测量结果表明,无论是原始淀积的还是退火的样品,Ge1Sb2Te4薄膜的载流子浓度均比Ge2Sb2Te5高三个数量级以上,由此推论:Ge1Sb2Te4较高的电导主要来自其较大的载流子浓度.利用变温探针台测量了Ge1Sb2Te4和Ge2Sb2Te5在相变前恒温条件下电阻随时间变化关系,结果表明在相同的恒温条件下Ge2Sb2Te5电阻保持时间更长,更加有利于数据的存储. 展开更多
关键词 硫系相变材料 ge1sb2te4 Ge2Sb2Te5
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