Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with ...Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is reviewed.The GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.展开更多
To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mo...To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge （111） substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor （MOS） interface by analyzing the electrical characteristics of HCl- and （NH4）2S-passivated samples.展开更多
Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the ...Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.展开更多
Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） p...Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） processes. Based on Ge, Ge on insulator （GOI） not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth （RMG） has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal-oxide-semiconductor field effect transistors （MOSFETs） and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits.展开更多
Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology...Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.展开更多
基金supported by the Natural Science Foundation of Beijing Municipality(No.4214079)。
文摘Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is reviewed.The GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.
基金Project supported by the National Basic Research Program of China (Grant Nos.2011CBA00605 and 2010CB327501)the National Natural Science Foundation of China (Grant No.61106095)the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No.2011ZX02708-003)
文摘To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge （111） substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor （MOS） interface by analyzing the electrical characteristics of HCl- and （NH4）2S-passivated samples.
文摘Simulation method is used to provide a guideline f or ultra thin body(UTB) MOSFET designs.Three important parameters of the UTB MOS FE T,i.e.the raised S/D height,Ge mole fraction of the Ge xSi 1-x gate,and the silic on body thickness,are comprehensively analyzed and optimized.The optimal region of feasible Ge mole fraction and the silicon body thickness for low operating po wer device are given.As the simulation results show that through changing Ge mole fraction coupl ed with the silicon body thickness tuning,UTB device with good performance can b e obtained.
基金Project supported in part by the National Key Research and Development Program of China(No.2017YFA0206404)the National Natural Science Foundation of China(Nos.61435013,61534005,61534004,61604146)
文摘Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor （CMOS） processes. Based on Ge, Ge on insulator （GOI） not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth （RMG） has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal-oxide-semiconductor field effect transistors （MOSFETs） and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits.
基金supported in part by the National Natural Science Foundation(Nos.61036003,61435013)the Major State Basic Research Development Program of China(No.2013CB632103)
文摘Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.
