The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer ...The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.展开更多
MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the...MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.展开更多
LaON,LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La_2O_3 using the sputtering method to fabricate Ge MOS capacitors,and the electrical properties of the devices are caref...LaON,LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La_2O_3 using the sputtering method to fabricate Ge MOS capacitors,and the electrical properties of the devices are carefully examined.LaON/Ge capacitors exhibit the best interface quality,gate leakage property and device reliability,but a smaller k value（14.9）.LaTiO/Ge capacitors exhibit a higher k value（22.7）,but a deteriorated interface quality,gate leakage property and device reliability.LaTiON/Ge capacitors exhibit the highest k value（24.6）,and a relatively better interface quality（3.1×10^（11） eV^（-1）cm^（-2））,gate leakage property（3.6 × 10^（-3） A/cm^2 at V_g = 1V＋V_（fb）） and device reliability.Therefore,LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.展开更多
基金Funded by the National Natural Science Foundation of China (No. 61704113)the Higher Vocational Brand Mayer in Guangdong Province (No.610103)the Educational Science Planning Project of Guangdong Province (Higher Education Special)。
文摘The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.
基金supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
文摘MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.
基金supported by the National Natural Science Foundation of China(No.61274112)the Natural Science Foundation of Hubei Province(No.2011CDB165)the Scientific Research Program of Huanggang Normal University(No.2012028803)
文摘LaON,LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La_2O_3 using the sputtering method to fabricate Ge MOS capacitors,and the electrical properties of the devices are carefully examined.LaON/Ge capacitors exhibit the best interface quality,gate leakage property and device reliability,but a smaller k value（14.9）.LaTiO/Ge capacitors exhibit a higher k value（22.7）,but a deteriorated interface quality,gate leakage property and device reliability.LaTiON/Ge capacitors exhibit the highest k value（24.6）,and a relatively better interface quality（3.1×10^（11） eV^（-1）cm^（-2））,gate leakage property（3.6 × 10^（-3） A/cm^2 at V_g = 1V＋V_（fb）） and device reliability.Therefore,LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.
