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Fast Ion Gates without the Lamb-Dicke Approximation by Robust Quantum Optimal Control
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作者 Ran Liu Xiaodong Yang +2 位作者 Yiheng Lin Yao Lu Jun Li 《Chinese Physics Letters》 2025年第8期75-82,共8页
We present a robust quantum optimal control framework for implementing fast entangling gates on ion-trap quantum processors.The framework leverages tailored laser pulses to drive the multiple vibrational sidebands of ... We present a robust quantum optimal control framework for implementing fast entangling gates on ion-trap quantum processors.The framework leverages tailored laser pulses to drive the multiple vibrational sidebands of the ions to create phonon-mediated entangling gates and,unlike the state of the art,requires neither weakcoupling Lamb-Dicke approximation nor perturbation treatment.With the application of gradient-based optimal control,it enables finding amplitude-and phase-modulated laser control protocols that work without the Lamb-Dicke approximation,promising gate speeds on the order of microseconds comparable to the characteristic trap frequencies.Also,robustness requirements on the temperature of the ions and initial optical phase can be conveniently included to pursue high-quality fast gates against experimental imperfections.Our approach represents a step in speeding up quantum gates to achieve larger quantum circuits for quantum computation and simulation,and thus can find applications in near-future experiments. 展开更多
关键词 quantum optimal control framework gradient based optimal control quantum computation Lamb Dicke approximation fast ion gates tailored laser pulses entangling gates robust quantum optimal control
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Analysis of Heralded Higher-Fidelity Two-Qubit Entangling Gates with Self-Correction
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作者 Yuan Sun 《Chinese Physics Letters》 2025年第7期156-170,共15页
For the quantum error correction and noisy intermediate-scale quantum algorithms to function with high efficiency,the raw fidelity of quantum logic gates on physical qubits needs to satisfy strict requirements.The neu... For the quantum error correction and noisy intermediate-scale quantum algorithms to function with high efficiency,the raw fidelity of quantum logic gates on physical qubits needs to satisfy strict requirements.The neutral atom quantum computing equipped with Rydberg blockade gates has made impressive progress recently,which makes it worthwhile to explore its potential in the two-qubit entangling gates,including the controlledphase gate,and in particular,the CZ gate.Provided the quantum coherence is well preserved,improving the fidelity of Rydberg blockade gates calls for special mechanisms to deal with adverse effects caused by realistic experimental conditions.Here,the heralded very-high-fidelity Rydberg blockade controlled-phase gate is designed to address these issues,which contains self-correction and projection as the key steps.This trailblazing method builds upon the previously established buffer-atom-mediated gate framework,with a special form of symmetry under parity–time transformation playing a crucial role in the process.We further analyze the performance with respect to a few typical sources of imperfections.This procedure can also be regarded as quantum hardware error correction or mitigation.While this paper by itself does not cover every single subtle issue and still contains many oversimplifications,we find it reasonable to anticipate a very-high-fidelity two-qubit quantum logic gate operated in the sense of heralded but probabilistic,whose gate error can be reduced to the level of 10^(-4)–10^(-6)or even lower with reasonably high possibilities. 展开更多
关键词 rydberg blockade gates controlledphase gateand neutral atom quantum computing quantum coherence quantum error correction cz gateprovided heralded higher fidelity two qubit entangling gates self correction
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High-Fidelity Two-Qubit Quantum Logic Gates in a Trapped-Ion Chain Using Axial Motional Modes
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作者 Xingyu Zhao Ji Bian +3 位作者 Yi Li Yue Li Mengxiang Zhang Yiheng Lin 《Chinese Physics Letters》 2025年第11期139-149,共11页
Trapped-ion systems are one of the leading platforms for quantum information processing, where a key challenge is to scale up system size while maintaining high-fidelity two-qubit operations. A promising approach is t... Trapped-ion systems are one of the leading platforms for quantum information processing, where a key challenge is to scale up system size while maintaining high-fidelity two-qubit operations. A promising approach is to build high-performance modules interconnected via strong coupling. In particular, axial motional modes offer a practical mechanism to couple the ions in a chain, enabling the preparation of Greenberger–Horne–Zeilinger states with up to 24 ions using global operations, as well as high-fidelity two-qubit gates(96.6%–98.0%) in fully connected five-ion chains. Here, we demonstrate two-qubit quantum logic gates in a 5-ion^(40)Ca^(+)chain using axial modes, achieving fidelities exceeding 99% for adjacent pairs and over 98% for arbitrary pairs by carefully tackling dominant error sources. Our results are beneficial to the development of scalable ion-trap quantum processors,quantum simulation and quantum-enhanced metrology. 展开更多
关键词 global operations trapped ion systems axial motional modes preparation greenberger horne zeilinger states quantum information processing high fidelity gates strong coupling scale up system size
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Simulation and fabrication of vertical channel transistors with self-aligned high-κ metal gates using ion implantation for source/drain doping
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作者 Penghui Sun Yongkui Zhang Jun Luo 《Journal of Semiconductors》 2025年第12期62-70,共9页
In vertical channel transistors(VCTs),source/drain ion implantation(I/I)represents a significant technical challenge due to inherent three-dimensional structural constraints,which induce complications such as difficul... In vertical channel transistors(VCTs),source/drain ion implantation(I/I)represents a significant technical challenge due to inherent three-dimensional structural constraints,which induce complications such as difficulties in dummy gate forma-tion and shadowing effects of I/I.This article systematically investigates the impact of different implantation conditions on the performance of VCTs with and without dummy gates through TCAD simulation.It reveals the significant role of the lightly doped regions(LDRs)naturally formed due to ion implantation in source/drain of VCTs.Furthermore,it was found that VCT with-out dummy gates can achieve an approximately 27%increase in on-state current(Ion)under the same implantation conditions,and can greatly simplify the process flow and reduce costs.Finally,N-type and P-type VCTs were successfully fabricated using this implantation method. 展开更多
关键词 vertical channel transistor source/drain ion implantation on-state current dummy gates
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Gates法计算的GFR在单侧肾积水患者肾小球滤过功能评价中的应用 被引量:7
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作者 王婵 许守林 冯雪凤 《山东医药》 CAS 北大核心 2016年第37期64-66,共3页
目的探讨Gates法计算的肾小球滤过率(GFR)对单侧肾积水患者肾小球滤过功能评估的价值。方法选择经B超检查确诊为单侧肾积水的患者176例(轻度积水组21例、中度积水组33例、重度积水组122例),同期选取泌尿系统及GFR均正常的肾移植供体捐献... 目的探讨Gates法计算的肾小球滤过率(GFR)对单侧肾积水患者肾小球滤过功能评估的价值。方法选择经B超检查确诊为单侧肾积水的患者176例(轻度积水组21例、中度积水组33例、重度积水组122例),同期选取泌尿系统及GFR均正常的肾移植供体捐献者22例(正常对照组)。两组均接受99mTc-DTPA肾动态显像检查,用Gates法计算患肾、健肾、双肾GFR值,根据单肾GFR将患者肾功能划分为肾功能正常、轻度下降、中度下降、重度下降及肾无功能。结果与正常对照组比较,中、重度积水组患侧肾GFR降低,轻、中、重度积水组健侧肾GFR升高,中、重度积水组双肾GFR降低(P均<0.05)。轻度积水组90.48%的患肾GFR正常,中度积水组63.64%的患肾GFR轻度下降,重度积水组35.25%的患肾GFR重度下降、33.33%的患肾无功能。积水越严重肾功能越差。结论 Gates法计算的单肾、总肾GFR可定量分析单侧肾积水患者肾小球滤过功能,同步评价健侧肾的代偿能力。 展开更多
关键词 肾积水 肾小球滤过率 肾滤过功能 gates
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Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果研究 被引量:5
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作者 杨介平 刘伟 高庆红 《华西口腔医学杂志》 CAS CSCD 北大核心 2013年第4期381-384,共4页
目的通过临床随机对照试验的方法评价Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉有效性和安全性。方法使用左右半口设计,32例患者的左右下颌阻生第三磨牙分别随机采用Gow-Gates法和传统注射法进行下牙槽神经阻滞麻... 目的通过临床随机对照试验的方法评价Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉有效性和安全性。方法使用左右半口设计,32例患者的左右下颌阻生第三磨牙分别随机采用Gow-Gates法和传统注射法进行下牙槽神经阻滞麻醉,并拔除下颌阻生第三磨牙,记录麻醉效果及不良事件。结果所有患者均完成研究。Gow-Gates法的麻醉成功率为96.9%,传统注射法的麻醉成功率为90.6%,二者的麻醉成功率无统计学差异(P=0.317)。在麻醉程度上,Gow-Gates法麻醉程度为A和B级的比率为96.9%,明显好于传统注射法的78.1%(P=0.034)。Gow-Gates法的回抽出血率明显低于传统注射法(P=0.025),2种注射方法均未出现血肿。结论 Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果好且较为安全,可以作为传统注射法的有效补充。 展开更多
关键词 下牙槽神经阻滞麻醉 第三磨牙 拔牙 Gow—gates
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肾积水对轻中度肾损伤者Gates法GFR的影响 被引量:1
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作者 雷智莉 郭小闪 +2 位作者 武志芳 刘建中 李聪革 《医学研究杂志》 2012年第6期102-104,126,共4页
目的了解轻中度肾积水对肾动态显像GFR的影响。方法回顾2010年1~12月51例双血浆法GFR(tGFR)在30~90ml/(1.73m2.min)范围内的肾积水患者的肾动态显像,按照tGFR的大小并结合肾脏疾病的分期标准分成正常对照组[90ml(1.73m2.min)≤tGFR<... 目的了解轻中度肾积水对肾动态显像GFR的影响。方法回顾2010年1~12月51例双血浆法GFR(tGFR)在30~90ml/(1.73m2.min)范围内的肾积水患者的肾动态显像,按照tGFR的大小并结合肾脏疾病的分期标准分成正常对照组[90ml(1.73m2.min)≤tGFR<120ml/(1.73m2.min)],轻度[60ml/(1.73m2.min)≤tGFR<90ml/(1.73m2.min)]和中度[30ml/(1.73m2.min)≤tGFR<60ml/(1.73m2.min)]肾损伤3组,并比较体表面积标准化前后Gates法GFR(gGFR)和tGFR间差异和相关性。结果大多数情况下,gGFR均高于tGFR,二者差值范围-35.1~26.1ml/(1.73m2.min);tGFRBSA和gGFRBSA间差值范围-38.3~26.8ml/(1.73m2.min)。无论轻度和中度肾损伤组,还是整体患者中,BSA标准化均可改善tGFR和gGFR间的相关性。BSA标准化后,中度肾损伤组的相关系数可达到0.634(P=0.020),而轻度肾损伤组和整体患者中仅为0.298(P=0.229)和0.543(P=0.002)。结论体表面积标准化Gates法GFR可提高其与双血浆法间的相关性,但评估肾积水伴轻中度肾损伤患者GFR价值有限,应参考双血浆法的定量结果。 展开更多
关键词 肾动态显像 双血浆法 gates 体表面积
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Acupuncture at “four gates” points for insomnia in 53 free combat athletes 被引量:2
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作者 宋剑君 《World Journal of Acupuncture-Moxibustion》 CSCD 2015年第3期67-70,共4页
Objective To observe the clinical efficacy of acupuncture at "four gates"(Hég(合谷 LI 4) and Tàichōng(太冲 LR 3) on sport insomnia. Methods Fifty three free combat athletes with insomnia were treated... Objective To observe the clinical efficacy of acupuncture at "four gates"(Hég(合谷 LI 4) and Tàichōng(太冲 LR 3) on sport insomnia. Methods Fifty three free combat athletes with insomnia were treated with acupuncture at "four gates"(LI 4 and LR 3). The treatment was given once daily, 5 days were one course. Flicker fusion frequency and clinical efficacy were evaluated after two courses. Results Flicker fusion frequencies before and after treatment were(235.40±4.12) Hz and(298.56±5.35) Hz, respectively, and the difference was statistically significant(P0.05). Total effective rate was 92.45%(49/53) with a cure rate of 52.83%(29/53). Conclusion The clinical efficacy of acupuncture at "four gates"(LI 4 and LR 3) is significant in treatment of sport insomnia. 展开更多
关键词 sport insomnia ACUPUNCTURE four gates(Hég(合谷 LI 4) and Tàichōng(太冲 LR 3)
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Implementing remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems
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作者 杨榕灿 李洪才 +1 位作者 林秀 黄志平 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第1期180-184,共5页
We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as m... We propose a scheme for the implementation of remote controlled-NOT gates and entanglement swapping via geometric phase gates in ion-trap systems. The proposed scheme uses the two ground states of the A-type ions as memory instead of the vibrational mode. And the system is robust against the spontaneous radiation and the dephasing. 展开更多
关键词 remote controlled-NOT gates entanglement swapping geometric phase gates ion-trap systems
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Realization of adiabatic and diabatic CZ gates in superconducting qubits coupled with a tunable coupler
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作者 Huikai Xu Weiyang Liu +11 位作者 Zhiyuan Li Jiaxiu Han Jingning Zhang Kehuan Linghu Yongchao Li Mo Chen Zhen Yang Junhua Wang Teng Ma Guangming Xue Yirong Jin Haifeng Yu 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第4期81-85,共5页
High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gat... High fidelity two-qubit gates are fundamental for scaling up the superconducting qubit number.We use two qubits coupled via a frequency-tunable coupler which can adjust the coupling strength,and demonstrate the CZ gate using two different schemes,adiabatic and diabatic methods.The Clifford based randomized benchmarking(RB) method is used to assess and optimize the CZ gate fidelity.The fidelities of adiabatic and diabatic CZ gates are 99.53(8)% and 98.72(2)%,respectively.We also analyze the errors induced by the decoherence.Comparing to 30 ns duration time of adiabatic CZ gate,the duration time of diabatic CZ gate is 19 ns,revealing lower incoherence error rate r’_(incoherent),int=0.0197(5) compared to r_(incoherent,int)=0.0223(3). 展开更多
关键词 controlled-Z gates high fidelity gates tunable coupler
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基于Attention Gates和R2U-Net的遥感影像建筑物提取方法 被引量:11
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作者 于文玲 刘波 +4 位作者 刘华 杜梓维 邹时林 苏友能 刘娜娜 《地理与地理信息科学》 CSCD 北大核心 2022年第3期31-36,42,共7页
针对深度语义分割算法提取遥感影像建筑物时易产生建筑物边缘分割不明确、提取精度不高等问题,该文提出一种基于Attention Gates(AG)和R2U-Net的遥感影像建筑物提取方法(AGR2U-Net)。该方法将R2U-Net模型每一层输出的特征图与其相邻层... 针对深度语义分割算法提取遥感影像建筑物时易产生建筑物边缘分割不明确、提取精度不高等问题,该文提出一种基于Attention Gates(AG)和R2U-Net的遥感影像建筑物提取方法(AGR2U-Net)。该方法将R2U-Net模型每一层输出的特征图与其相邻层的特征图输入至改进的AG模型中,得到与输入影像大小一致的特征图,以提高R2U-Net模型的多尺度泛化能力,从而增强该模型对建筑物特征的响应及灵敏度,最终提升遥感影像建筑物提取精度。利用WHU卫星影像数据集和WHU航空影像数据集,对该方法与U-Net、Improved U-Net、SegU-Net和R2U-Net方法进行对比实验验证,结果表明,该方法的交并比、像素准确率和召回率均最高,且提取的建筑物边缘更准确、内部信息更完整、误检和漏检情况更少。 展开更多
关键词 遥感影像 Attention gates R2U-Net模型 AGR2U-Net模型 建筑物提取
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弹丸注射质量对Gates法测定活体肾移植供者GFR的影响 被引量:1
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作者 王岐 薛建军 +4 位作者 杨路路 王妮妮 丁蕊娜 闫青丹 杨爱民 《标记免疫分析与临床》 CAS 2021年第7期1141-1145,共5页
目的探讨高质量弹丸注射对Gates法准确测定活体肾移植供者GFR的重要意义。方法收集在我院核医学科行肾动态显像的102例亲属活体肾移植供者的检查资料,将这102例受检者根据弹丸注射质量分为两组:A组(弹丸注射质量良好)56例,B组(弹丸注射... 目的探讨高质量弹丸注射对Gates法准确测定活体肾移植供者GFR的重要意义。方法收集在我院核医学科行肾动态显像的102例亲属活体肾移植供者的检查资料,将这102例受检者根据弹丸注射质量分为两组:A组(弹丸注射质量良好)56例,B组(弹丸注射质量欠佳以及不合格)46例。对比两组的年龄、性别、肾脏深度、注入体内放射性计数、分肾GFR、总肾GFR、eGFR差异,并将两组的肾动态显像测定的总肾GFR值与eGFR进行相关性和一致性分析。结果A、B两组的年龄、性别、肾脏深度、注入体内放射性计数、eGFR差异均无统计学意义,而两组的左肾GFR、右肾GFR、总GFR的差异均具有统计学意义。与B组相比,A组的总GFR与eGRF有更好的相关性和一致性。结论高质量弹丸注射对Gates法准确测定活体肾移植供者GFR具有重要意义,弹丸质量不佳将导致测定的GFR偏低。 展开更多
关键词 弹丸注射 gates 肾动态显像 肾小球滤过率
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应用^(99m)Tc-DTPA测定GFR——Gates法 被引量:1
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作者 梅楠 管昌田 《国外医学(放射医学核医学分册)》 北大核心 1991年第1期32-34,共3页
应用^(99m)Tc-DTPA检测肾功能的方法很多,Gates法是以^(99m)Tc-DTPA肾摄取率来计算GFR,它可同时评价总肾功能和分肾功能,并且与临床传统检查的内生肌酐清除率有良好的相关性(r=0.89~0.99).本文简要介绍了Gates法及其有关的γ射线吸收... 应用^(99m)Tc-DTPA检测肾功能的方法很多,Gates法是以^(99m)Tc-DTPA肾摄取率来计算GFR,它可同时评价总肾功能和分肾功能,并且与临床传统检查的内生肌酐清除率有良好的相关性(r=0.89~0.99).本文简要介绍了Gates法及其有关的γ射线吸收校正、肾脏深度的计算、检测时间的设定等问题. 展开更多
关键词 肾小球滤过率 锝99 DTPA gates
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Controllable all-optical stochastic logic gates and their delay storages based on the cascaded VCSELs with optical-injection 被引量:6
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作者 钟东洲 罗伟 许葛亮 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期342-354,共13页
Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded ve... Using the dynamical properties of the polarization bistability that depends on the detuning of the injected light,we propose a novel approach to implement reliable all-optical stochastic logic gates in the cascaded vertical cavity surface emitting lasers(VCSELs) with optical-injection.Here,two logic inputs are encoded in the detuning of the injected light from a tunable CW laser.The logic outputs are decoded from the two orthogonal polarization lights emitted from the optically injected VCSELs.For the same logic inputs,under electro-optic modulation,we perform various digital signal processing(NOT,AND,NAND,XOR,XNOR,OR,NOR) in the all-optical domain by controlling the logic operation of the applied electric field.Also we explore their delay storages by using the mechanism of the generalized chaotic synchronization.To quantify the reliabilities of these logic gates,we further demonstrate their success probabilities. 展开更多
关键词 all-optical stochastic logic gates delay storage polarization bistable success probability
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Tunable Nongeometric Phase Gates for Two Hot Ions via Adiabatic Evolution of Dark States 被引量:1
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作者 郑仕标 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第12期3155-3157,共3页
We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensi... We propose a scheme for implementing nongeometric phase gates fbr two trapped ions via adiabatic passage of dark states. During the operation, the vibrational mode is only virtually excited, thus the scheme is insensitive to heating. Furthermore, the spontaneous emission is suppressed since the ions are always in the electronic ground states. The scheme is robust against small fluctuations of parameters, and the conditional phase is tunable. 展开更多
关键词 QUANTUM LOGIC gates TRAPPED IONS COMPUTATION
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Two-qubit and three-qubit controlled gates with cross-Kerr nonlinearity 被引量:1
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作者 赵瑞通 郭奇 +3 位作者 程留永 孙立莉 王洪福 张寿 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第3期173-178,共6页
Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,whic... Schemes for two-qubit and three-qubit controlled gates based on cross-Kerr nonlinearity are proposed in this paper.The probability of the success of these gates can be increased by quantum nondemolition detectors,which are used to judge which paths the signal photons pass through.These schemes are almost deterministic and require no ancilla photon.The advantages of these gates over the existing ones include less resource consumption and a higher probability of success,which make our schemes more feasible with current technology. 展开更多
关键词 quantum controlled gates cross-Kerr nonlinearity quantum nondemolition detector
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Study of Decoherence of Elementary Gates Implemented in a Chain of Few Nuclear Spins Quantum Computer Model 被引量:2
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作者 G. V. López P. López 《Journal of Modern Physics》 2012年第1期85-101,共17页
We study the phenomenon of decoherence during the operation of one qubit transformation, controlled-not (CNOT) and controlled-controlled-not (C2NOT) quantum gates in a quantum computer model formed by a linear chain o... We study the phenomenon of decoherence during the operation of one qubit transformation, controlled-not (CNOT) and controlled-controlled-not (C2NOT) quantum gates in a quantum computer model formed by a linear chain of three nuclear spins system. We make this study with different type of environments, and we determine the associated decoherence time as a function of the dissipative parameter. We found that the dissipation parameter to get a well defined quantum gates (without significant decoherence) must be within the range of . We also study the behavior of the purity parameter for these gates and different environments and found linear or quadratic decays of this parameter depending on the type of environments. 展开更多
关键词 DECOHERENCE Not GATE Controlled-Not gates Controlled-Controlled-Not GATE Nuclear Spin CHAIN QUANTUM Computer
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Implementation of all-optical tristate Pauli X, Y and Z gates based on two-dimensional photonic crystal 被引量:1
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作者 Snigdha Hazra Sourangshu Mukhopadhyay 《Optoelectronics Letters》 EI 2024年第6期346-352,共7页
In this paper, we have designed and simulated all-optical tristate Pauli X, Y and Z gates using 2D photonic crystal. Simple line and point defects have been used to design the structure. The performance of the structu... In this paper, we have designed and simulated all-optical tristate Pauli X, Y and Z gates using 2D photonic crystal. Simple line and point defects have been used to design the structure. The performance of the structure has been analyzed and investigated by plane wave expansion(PWE) and finite difference time domain(FDTD) methods. Different performance parameters, namely contrast ratio(CR), rise time, fall time, delay time, response time and bit rate, have been calculated. The main advantage of the proposed design is that all the Pauli gates have been realized from a single structure. Due to compact size, fast response time, good CR and high bit rate, the proposed structure can be highly useful for optical computing, data processing and optical integrated circuits. 展开更多
关键词 Implementation of all-optical tristate Pauli X Y and Z gates based on two-dimensional photonic crystal
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A High Performance Sub-100nm Nitride/Oxynitride Stack Gate Dielectric CMOS Device with Refractory W/TiN Metal Gates
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作者 钟兴华 周华杰 +1 位作者 林钢 徐秋霞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期448-453,共6页
By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT- 1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a... By complementing the equivalent oxide thickness (EOT) of a 1.7nm nitride/oxynitride (N/O) stack gate dielectric (EOT- 1.7nm) with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability. 展开更多
关键词 equivalent oxide thickness nitride/oxynitride gate dielectric stack W/TiN metal gate non-CMP planarization
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STUDY ON NON LINEAR VIBRATION RESPONSE OF PLATE GATES *
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作者 练继建 杨敏 林继镛 《Transactions of Tianjin University》 EI CAS 1998年第1期14-18,共5页
This paper deals with the vertical vibration, the horizontal translatory and flexural vibrations of plate gate with a flat bottom under the action of unstable submerged underflow. Based on a non linear resonant oscil... This paper deals with the vertical vibration, the horizontal translatory and flexural vibrations of plate gate with a flat bottom under the action of unstable submerged underflow. Based on a non linear resonant oscillator model by which the coupled excitation mechanism between the unstable vortices and gate motion can be simulated, the differential equations for the three types of gate vibrations are established. The parameters in the equations are determined by model experiments. Then, the steady state non linear responses of the three types of gate vibrations are calculated. The calculation results are in good agreement with the experimental data of gate vibrations with different reduced velocity and gate parameters by previous researchers. 展开更多
关键词 non linear VIBRATION GATE calculation model
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