For the quantum error correction and noisy intermediate-scale quantum algorithms to function with high efficiency,the raw fidelity of quantum logic gates on physical qubits needs to satisfy strict requirements.The neu...For the quantum error correction and noisy intermediate-scale quantum algorithms to function with high efficiency,the raw fidelity of quantum logic gates on physical qubits needs to satisfy strict requirements.The neutral atom quantum computing equipped with Rydberg blockade gates has made impressive progress recently,which makes it worthwhile to explore its potential in the two-qubit entangling gates,including the controlledphase gate,and in particular,the CZ gate.Provided the quantum coherence is well preserved,improving the fidelity of Rydberg blockade gates calls for special mechanisms to deal with adverse effects caused by realistic experimental conditions.Here,the heralded very-high-fidelity Rydberg blockade controlled-phase gate is designed to address these issues,which contains self-correction and projection as the key steps.This trailblazing method builds upon the previously established buffer-atom-mediated gate framework,with a special form of symmetry under parity–time transformation playing a crucial role in the process.We further analyze the performance with respect to a few typical sources of imperfections.This procedure can also be regarded as quantum hardware error correction or mitigation.While this paper by itself does not cover every single subtle issue and still contains many oversimplifications,we find it reasonable to anticipate a very-high-fidelity two-qubit quantum logic gate operated in the sense of heralded but probabilistic,whose gate error can be reduced to the level of 10^(-4)–10^(-6)or even lower with reasonably high possibilities.展开更多
As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TOD...This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70%compared to C-MOSFETs.Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET,and the gate leakage current is reduced by 95%compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer(LET)value exceeding 75 MeV·cm^(2)/mg.展开更多
We present a robust quantum optimal control framework for implementing fast entangling gates on ion-trap quantum processors.The framework leverages tailored laser pulses to drive the multiple vibrational sidebands of ...We present a robust quantum optimal control framework for implementing fast entangling gates on ion-trap quantum processors.The framework leverages tailored laser pulses to drive the multiple vibrational sidebands of the ions to create phonon-mediated entangling gates and,unlike the state of the art,requires neither weakcoupling Lamb-Dicke approximation nor perturbation treatment.With the application of gradient-based optimal control,it enables finding amplitude-and phase-modulated laser control protocols that work without the Lamb-Dicke approximation,promising gate speeds on the order of microseconds comparable to the characteristic trap frequencies.Also,robustness requirements on the temperature of the ions and initial optical phase can be conveniently included to pursue high-quality fast gates against experimental imperfections.Our approach represents a step in speeding up quantum gates to achieve larger quantum circuits for quantum computation and simulation,and thus can find applications in near-future experiments.展开更多
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.展开更多
The Informer model leverages its innovative ProbSparse self-attention mechanism to demonstrate significant performance advantages in long-sequence time-series forecasting tasks.However,when confronted with time-series...The Informer model leverages its innovative ProbSparse self-attention mechanism to demonstrate significant performance advantages in long-sequence time-series forecasting tasks.However,when confronted with time-series data exhibiting multi-scale characteristics and substantial noise,the model’s attention mechanism reveals inherent limitations.Specifically,the model is susceptible to interference from local noise or irrelevant patterns,leading to diminished focus on globally critical information and consequently impairing forecasting accuracy.To address this challenge,this study proposes an enhanced architecture that integrates a Gated Attention mechanism into the original Informer framework.This mechanism employs learnable gating functions to dynamically and selectively impose differentiated weighting on crucial temporal segments and discriminative feature dimensions within the input sequence.This adaptive weighting strategy is designed to effectively suppress noise interference while amplifying the capture of core dynamic patterns.Consequently,it substantially strengthens the model’s capability to represent complex temporal dynamics and ultimately elevates its predictive performance.展开更多
A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the g...A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.展开更多
The rise in gas leakage incidents underscores the urgent need for advanced gas-sensing platforms with ultra-low concentration detection capability.Sensing gate field effect transistor(FET)gas sensors,renowned for the ...The rise in gas leakage incidents underscores the urgent need for advanced gas-sensing platforms with ultra-low concentration detection capability.Sensing gate field effect transistor(FET)gas sensors,renowned for the gas-induced signal amplification without directly exposing the channel to the ambient environment,play a pivotal role in detecting trace-level hazardous gases with high sensitivity and good stability.In this work,carbon nanotubes are employed as the conducting channel,and yttrium oxide(Y_(2)O_(3))is utilized as the gate dielectric layer.Noble metal Pd is incorporated as a sensing gate for hydrogen(H_(2))detection,leveraging its catalytic properties and unique adsorption capability.The fabricated carbon-based FET gas sensor demonstrates a remarkable detection limit of 20×10^(–9) for H_(2) under an air environment,enabling early warning in case of gas leakage.Moreover,the as-prepared sensor exhibited good selectivity,repeatability,and anti-humidity properties.Further experiments elucidate the interaction between H_(2) and sensing electrode under an air/nitrogen environment,providing insights into the underlying oxygen-assisted recoverable sensing mechanism.It is our aspiration for this research to establish a robust experimental foundation for achieving high performance and highly integrated fabrication of trace gas sensors.展开更多
High-quality entangling gates are crucial for scalable quantum information processing.Implementing all-microwave two-qubit gates on fixed-frequency transmons offers advantages in reducing wiring complexity,but the gat...High-quality entangling gates are crucial for scalable quantum information processing.Implementing all-microwave two-qubit gates on fixed-frequency transmons offers advantages in reducing wiring complexity,but the gate performance is often limited due to the residual ZZ interaction and the frequency crowding problem.Here,we introduce a novel scheme that enables a microwave drive-activated CZ gate compatible with the coupler structure to suppress the residual ZZ interaction.The microwave drive is applied to the coupler and the microwave drive frequency remains far detuned from the system’s transition frequency to alleviate the frequency crowding problem.We model the gate process analytically and demonstrate a theoretical gate fidelity up to 99.9%numerically.Our scheme is compatible with current coupler-structure-based circuits,and insensitive to microwave crosstalk,showing a possible path for all-microwave quantum operations at scale.展开更多
Trapped ion hardware has made significant progress recently and is now one of the leading platforms for quantum computing.To construct two-qubit gates in trapped ions,experimentalmanipulation approaches for ion chains...Trapped ion hardware has made significant progress recently and is now one of the leading platforms for quantum computing.To construct two-qubit gates in trapped ions,experimentalmanipulation approaches for ion chains are becoming increasingly prevalent.Given the restricted control technology,how implementing high-fidelity quantum gate operations is crucial.Many works in current pulse design optimization focus on ion–phonon and effective ion–ion couplings while ignoring the first-order derivative terms expansion impacts of these two terms brought on by experiment defects.This paper proposes a novel robust quantum control optimization method in trapped ions.By introducing the first-order derivative terms caused by the error into the optimization cost function,we generate an extremely robust Mølmer–Sørensen gate with infidelity below 10^(−3) under a drift noise range of±10 kHz,the relative robustness achieves a tolerance of±5%,compared to the 200-kHz frequency spacing between phonon modes,and for time noise drift,the tolerance reached to 2%.Our work reveals the vital role of the first-order derivative terms of coupling in trapped ion pulse control optimization,especially the first-order derivative terms of ion–ion coupling.It provides a robust optimization scheme for realizing more efficient entangled states in trapped ion platforms.展开更多
With the increasing importance of multimodal data in emotional expression on social media,mainstream methods for sentiment analysis have shifted from unimodal to multimodal approaches.However,the challenges of extract...With the increasing importance of multimodal data in emotional expression on social media,mainstream methods for sentiment analysis have shifted from unimodal to multimodal approaches.However,the challenges of extracting high-quality emotional features and achieving effective interaction between different modalities remain two major obstacles in multimodal sentiment analysis.To address these challenges,this paper proposes a Text-Gated Interaction Network with Inter-Sample Commonality Perception(TGICP).Specifically,we utilize a Inter-sample Commonality Perception(ICP)module to extract common features from similar samples within the same modality,and use these common features to enhance the original features of each modality,thereby obtaining a richer and more complete multimodal sentiment representation.Subsequently,in the cross-modal interaction stage,we design a Text-Gated Interaction(TGI)module,which is text-driven.By calculating the mutual information difference between the text modality and nonverbal modalities,the TGI module dynamically adjusts the influence of emotional information from the text modality on nonverbal modalities.This helps to reduce modality information asymmetry while enabling full cross-modal interaction.Experimental results show that the proposed model achieves outstanding performance on both the CMU-MOSI and CMU-MOSEI baseline multimodal sentiment analysis datasets,validating its effectiveness in emotion recognition tasks.展开更多
This study investigates the gate leakage mechanisms of AlN/GaN metal–insulator–semiconductor high-electronmobility transistors(MIS-HEMTs)fabricated on silicon substrate with Al_(2)O_(3)/SiN as stacked gate dielectri...This study investigates the gate leakage mechanisms of AlN/GaN metal–insulator–semiconductor high-electronmobility transistors(MIS-HEMTs)fabricated on silicon substrate with Al_(2)O_(3)/SiN as stacked gate dielectrics,analyzing behaviors across high and low temperature conditions.In the high-temperature reverse bias region(T>275 K,V_(G)<0 V),Poole–Frenkel emission(PFE)dominates at low electric fields,while trap-assisted tunneling(TAT)is the primary mechanism at medium to high electric fields.The shift from PFE to TAT as the dominant conduction mechanism is due to the increased tunneling effect of electrons as the electric field strength rises.Additionally,TAT is found to be the main gate leakage mechanism under low-temperature reverse bias(T<275 K,V_(G)<0 V).At lower temperatures,the reduction in electron energy causes the emission process to rely more on electric field forces.Furthermore,under forward bias conditions at both high and low temperatures(225 K<T<375 K,V_(G)>0 V),conduction is primarily dominated by defect-assisted tunneling(DAT).展开更多
Quantum circuit fidelity is a crucial metric for assessing the accuracy of quantum computation results and indicating the precision of quantum algorithm execution. The primary methods for assessing quantum circuit fid...Quantum circuit fidelity is a crucial metric for assessing the accuracy of quantum computation results and indicating the precision of quantum algorithm execution. The primary methods for assessing quantum circuit fidelity include direct fidelity estimation and mirror circuit fidelity estimation. The former is challenging to implement in practice, while the latter requires substantial classical computational resources and numerous experimental runs. In this paper, we propose a fidelity estimation method based on Layer Interleaved Randomized Benchmarking, which decomposes a complex quantum circuit into multiple sublayers. By independently evaluating the fidelity of each layer, one can comprehensively assess the performance of the entire quantum circuit. This layered evaluation strategy not only enhances accuracy but also effectively identifies and analyzes errors in specific quantum gates or qubits through independent layer evaluation. Simulation results demonstrate that the proposed method improves circuit fidelity by an average of 6.8% and 4.1% compared to Layer Randomized Benchmarking and Interleaved Randomized Benchmarking methods in a thermal relaxation noise environment, and by 40% compared to Layer RB in a bit-flip noise environment. Moreover, the method detects preset faulty quantum gates in circuits generated by the Munich Quantum Toolkit Benchmark, verifying the model’s validity and providing a new tool for faulty gate detection in quantum circuits.展开更多
By analyzing the bus operation environment and accounting for prediction uncertainties,a bus arrival interval prediction model was developed utilizing a gated recur-rent unit(GRU)neural network.To reduce the impact of...By analyzing the bus operation environment and accounting for prediction uncertainties,a bus arrival interval prediction model was developed utilizing a gated recur-rent unit(GRU)neural network.To reduce the impact of irrelevant data and boost prediction accuracy,an attention mechanism was integrated into the point model to concen-trate on important input sequence information.Based on the point predictions,the lower upper bound estimation(LUBE)method was used,providing a range for the bus interval times predicted by the model.The model was vali-dated using data from 169 bus routes in Nanchang,Jiangxi Province.The results indicated that the attention-GRU model outperformed neural network,long short-term memory and GRU models.Compared with the Bootstrap method,the LUBE method has a narrower average interval width.The coverage width-based criterion(CWC)was reduced by 8.1%,2.2%,and 5.7%at confidence levels of 85%,90%,and 95%,respectively,during the off-peak period,and by 23.2%,26.9%,and 27.3%at confidence levels of 85%,90%,and 95%,respectively,during the peak period.Therefore,it can accurately describe the fluctuation range in bus arrival times with higher accuracy and stability.展开更多
Molecular cloning remains a cornerstone technique in genetic engineering and synthetic biology.In this study,we conducted a systematic comparative analysis between the classical cloning method and the Golden Gate asse...Molecular cloning remains a cornerstone technique in genetic engineering and synthetic biology.In this study,we conducted a systematic comparative analysis between the classical cloning method and the Golden Gate assembly technique,utilizing Escherichia coli as the model organism.Through polymerase chain reaction(PCR)amplification,restriction enzyme digestion,ligation,transformation,and Sanger sequencing,we assessed the operational efficiency and cloning fidelity of both strategies.Our results demonstrated that Golden Gate assembly,leveraging type IIS restriction enzymes and simultaneous ligation,significantly enhanced cloning efficiency and precision,particularly for seamless multi-fragment assembly.In contrast,the classical cloning approach maintained certain advantages in simplicity and robustness for specific experimental conditions.Challenges encountered during transformation and sequencing highlighted the critical impact of technical accuracy on experimental outcomes.This study underscores the importance of selecting appropriate cloning methodologies tailored to experimental objectives and laboratory capabilities,providing a foundation for optimized molecular cloning workflows in future synthetic biology and biotechnology applications.展开更多
Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilist...Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilistic computing scheme based on the electrical manipulation of layer pseudospins in layered materials,by exploiting the interaction between real spins and layer pseudospins.展开更多
The Sluice Gate with Freight Carts is the earliest extant scroll in China that depicted a water mill.It was drawn during the early or middle Northern Song dynasty and was possibly a true portrayal of the West Water Mi...The Sluice Gate with Freight Carts is the earliest extant scroll in China that depicted a water mill.It was drawn during the early or middle Northern Song dynasty and was possibly a true portrayal of the West Water Mill Office.The copresence of a banquet scene of the Northern Song dynasty’s scholar-officials and a water mill both suggests a realistic reproduction of a specific scene and indicates the significance of the water mill as a cultural space.The Northern Song dynasty’s government-operated water mills were especially noticeable in the Capital Circuit京畿路,whose center was Dongjing东京.The basic development path of government-operated water mills in the inner and outer city of Dongjing was first from grain processing,which supplied the needs of the imperial palace,to tea processing,in which the governmental commercial capital also participated.Regarding city space and the use of water sources,the development spread from the north of the city to the south.Other prefectures outside Dongjing also had government-operated water mills—some brought income that could be used as official fiscal expenditure,including military expenditure,and were used to satisfy the need of local people’s livelihood,while some were used to serve the monopoly policy of tea and demonstrate the benevolent governance of local officials.In the Northern Song dynasty,the water mill was no longer merely a production site;rather,it was also a cultural space that integrated a natural background and artificial ingenuity.Closely related to the hosting of emperors and the garden making,sightseeing,feasting,and drinking of scholar-officials,along with the festival activities of locals,the water mill in the Northern Song dynasty was of great cultural significance.展开更多
基金supported by the Science and Technology Commission of Shanghai Municipality(Grant No.24DP2600202)the National Key R&D Program of China(Grant No.2024YFB4504002)the National Natural Science Foundation of China(Grant No.92165107)。
文摘For the quantum error correction and noisy intermediate-scale quantum algorithms to function with high efficiency,the raw fidelity of quantum logic gates on physical qubits needs to satisfy strict requirements.The neutral atom quantum computing equipped with Rydberg blockade gates has made impressive progress recently,which makes it worthwhile to explore its potential in the two-qubit entangling gates,including the controlledphase gate,and in particular,the CZ gate.Provided the quantum coherence is well preserved,improving the fidelity of Rydberg blockade gates calls for special mechanisms to deal with adverse effects caused by realistic experimental conditions.Here,the heralded very-high-fidelity Rydberg blockade controlled-phase gate is designed to address these issues,which contains self-correction and projection as the key steps.This trailblazing method builds upon the previously established buffer-atom-mediated gate framework,with a special form of symmetry under parity–time transformation playing a crucial role in the process.We further analyze the performance with respect to a few typical sources of imperfections.This procedure can also be regarded as quantum hardware error correction or mitigation.While this paper by itself does not cover every single subtle issue and still contains many oversimplifications,we find it reasonable to anticipate a very-high-fidelity two-qubit quantum logic gate operated in the sense of heralded but probabilistic,whose gate error can be reduced to the level of 10^(-4)–10^(-6)or even lower with reasonably high possibilities.
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
基金supported by the Joint Funds of the National Natural Science Foundation of China(Grant No.U2341220)the Hefei Comprehensive National Science Center。
文摘This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well(TODP-MOSFET)to enhance the single-event radiation tolerance of the gate oxide.Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70%compared to C-MOSFETs.Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET,and the gate leakage current is reduced by 95%compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer(LET)value exceeding 75 MeV·cm^(2)/mg.
基金supported by the National Natural Science Foundation of China(Grant Nos.12441502,12122506,12204230,and 12404554)the National Science and Technology Major Project of the Ministry of Science and Technology of China(2024ZD0300404)+6 种基金Guangdong Basic and Applied Basic Research Foundation(Grant No.2021B1515020070)Shenzhen Science and Technology Program(Grant No.RCYX20200714114522109)China Postdoctoral Science Foundation(CPSF)(2024M762114)Postdoctoral Fellowship Program of CPSF(GZC20231727)supported by the National Natural Science Foundation of China(Grant Nos.92165206 and 11974330)Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301603)the Fundamental Research Funds for the Central Universities。
文摘We present a robust quantum optimal control framework for implementing fast entangling gates on ion-trap quantum processors.The framework leverages tailored laser pulses to drive the multiple vibrational sidebands of the ions to create phonon-mediated entangling gates and,unlike the state of the art,requires neither weakcoupling Lamb-Dicke approximation nor perturbation treatment.With the application of gradient-based optimal control,it enables finding amplitude-and phase-modulated laser control protocols that work without the Lamb-Dicke approximation,promising gate speeds on the order of microseconds comparable to the characteristic trap frequencies.Also,robustness requirements on the temperature of the ions and initial optical phase can be conveniently included to pursue high-quality fast gates against experimental imperfections.Our approach represents a step in speeding up quantum gates to achieve larger quantum circuits for quantum computation and simulation,and thus can find applications in near-future experiments.
基金financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254)Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002)+1 种基金the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
文摘Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
文摘The Informer model leverages its innovative ProbSparse self-attention mechanism to demonstrate significant performance advantages in long-sequence time-series forecasting tasks.However,when confronted with time-series data exhibiting multi-scale characteristics and substantial noise,the model’s attention mechanism reveals inherent limitations.Specifically,the model is susceptible to interference from local noise or irrelevant patterns,leading to diminished focus on globally critical information and consequently impairing forecasting accuracy.To address this challenge,this study proposes an enhanced architecture that integrates a Gated Attention mechanism into the original Informer framework.This mechanism employs learnable gating functions to dynamically and selectively impose differentiated weighting on crucial temporal segments and discriminative feature dimensions within the input sequence.This adaptive weighting strategy is designed to effectively suppress noise interference while amplifying the capture of core dynamic patterns.Consequently,it substantially strengthens the model’s capability to represent complex temporal dynamics and ultimately elevates its predictive performance.
基金supported by the National Natural Science Foundation of China(Grant Nos.62074080 and U23B2042)in part by the Natural Science Foundation of Jiangsu Province(Grant No.BK20211104)in part by the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126)。
文摘A 4H-SiC superjunction(SJ)MOSFET(SJMOS)with integrated high-K gate dielectric and split gate(HKSG-SJMOS)is proposed in this paper.The key features of HKSG-SJMOS involve the utilization of high-K(HK)dielectric as the gate dielectric,which surrounds the source-connected split gate(SG)and metal gate.The high-K gate dielectric optimizes the electric field distribution within the drift region,creating a low-resistance conductive channel.This enhancement leads to an increase in the breakdown voltage(BV)and a reduction in the specific on resistance(R_(on,sp)).The introduction of split gate surrounded by high-K dielectric reduces the gate-drain capacitance(C_(gd))and gate-drain charge(Q_(gd)),which improves the switching characteristics.The simulation results indicate that compared to conventional 4H-SiC SJMOS,the HKSG-SJMOS exhibits a 110.5%enhancement in figure of merit(FOM,FOM=BV^(2)/R_(on,sp)),a 93.6%reduction in the high frequency figure of merit(HFFOM)of R_(on,sp)·C_(gd),and reductions in turn-on loss(E_(on))and turn-off loss(E_(off))by 38.3%and 31.6%,respectively.Furthermore,the reverse recovery characteristics of HKSG-SJMOS has also discussed,revealing superior performance compared to conventional 4H-SiC SJMOS.
基金supported by the National Natural Science Foundation of China(Nos.62071410 and 62101477)Hunan Provincial Natural Science Foundation(No.2021JJ40542).
文摘The rise in gas leakage incidents underscores the urgent need for advanced gas-sensing platforms with ultra-low concentration detection capability.Sensing gate field effect transistor(FET)gas sensors,renowned for the gas-induced signal amplification without directly exposing the channel to the ambient environment,play a pivotal role in detecting trace-level hazardous gases with high sensitivity and good stability.In this work,carbon nanotubes are employed as the conducting channel,and yttrium oxide(Y_(2)O_(3))is utilized as the gate dielectric layer.Noble metal Pd is incorporated as a sensing gate for hydrogen(H_(2))detection,leveraging its catalytic properties and unique adsorption capability.The fabricated carbon-based FET gas sensor demonstrates a remarkable detection limit of 20×10^(–9) for H_(2) under an air environment,enabling early warning in case of gas leakage.Moreover,the as-prepared sensor exhibited good selectivity,repeatability,and anti-humidity properties.Further experiments elucidate the interaction between H_(2) and sensing electrode under an air/nitrogen environment,providing insights into the underlying oxygen-assisted recoverable sensing mechanism.It is our aspiration for this research to establish a robust experimental foundation for achieving high performance and highly integrated fabrication of trace gas sensors.
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0303030002)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0670000)the National Key Research and Development Program of China(Grant No.2023YFB4404904).
文摘High-quality entangling gates are crucial for scalable quantum information processing.Implementing all-microwave two-qubit gates on fixed-frequency transmons offers advantages in reducing wiring complexity,but the gate performance is often limited due to the residual ZZ interaction and the frequency crowding problem.Here,we introduce a novel scheme that enables a microwave drive-activated CZ gate compatible with the coupler structure to suppress the residual ZZ interaction.The microwave drive is applied to the coupler and the microwave drive frequency remains far detuned from the system’s transition frequency to alleviate the frequency crowding problem.We model the gate process analytically and demonstrate a theoretical gate fidelity up to 99.9%numerically.Our scheme is compatible with current coupler-structure-based circuits,and insensitive to microwave crosstalk,showing a possible path for all-microwave quantum operations at scale.
文摘Trapped ion hardware has made significant progress recently and is now one of the leading platforms for quantum computing.To construct two-qubit gates in trapped ions,experimentalmanipulation approaches for ion chains are becoming increasingly prevalent.Given the restricted control technology,how implementing high-fidelity quantum gate operations is crucial.Many works in current pulse design optimization focus on ion–phonon and effective ion–ion couplings while ignoring the first-order derivative terms expansion impacts of these two terms brought on by experiment defects.This paper proposes a novel robust quantum control optimization method in trapped ions.By introducing the first-order derivative terms caused by the error into the optimization cost function,we generate an extremely robust Mølmer–Sørensen gate with infidelity below 10^(−3) under a drift noise range of±10 kHz,the relative robustness achieves a tolerance of±5%,compared to the 200-kHz frequency spacing between phonon modes,and for time noise drift,the tolerance reached to 2%.Our work reveals the vital role of the first-order derivative terms of coupling in trapped ion pulse control optimization,especially the first-order derivative terms of ion–ion coupling.It provides a robust optimization scheme for realizing more efficient entangled states in trapped ion platforms.
基金supported by the Natural Science Foundation of Henan under Grant 242300421220the Henan Provincial Science and Technology Research Project under Grants 252102211047 and 252102211062+3 种基金the Jiangsu Provincial Scheme Double Initiative Plan JSS-CBS20230474the XJTLU RDF-21-02-008the Science and Technology Innovation Project of Zhengzhou University of Light Industry under Grant 23XNKJTD0205the Higher Education Teaching Reform Research and Practice Project of Henan Province under Grant 2024SJGLX0126.
文摘With the increasing importance of multimodal data in emotional expression on social media,mainstream methods for sentiment analysis have shifted from unimodal to multimodal approaches.However,the challenges of extracting high-quality emotional features and achieving effective interaction between different modalities remain two major obstacles in multimodal sentiment analysis.To address these challenges,this paper proposes a Text-Gated Interaction Network with Inter-Sample Commonality Perception(TGICP).Specifically,we utilize a Inter-sample Commonality Perception(ICP)module to extract common features from similar samples within the same modality,and use these common features to enhance the original features of each modality,thereby obtaining a richer and more complete multimodal sentiment representation.Subsequently,in the cross-modal interaction stage,we design a Text-Gated Interaction(TGI)module,which is text-driven.By calculating the mutual information difference between the text modality and nonverbal modalities,the TGI module dynamically adjusts the influence of emotional information from the text modality on nonverbal modalities.This helps to reduce modality information asymmetry while enabling full cross-modal interaction.Experimental results show that the proposed model achieves outstanding performance on both the CMU-MOSI and CMU-MOSEI baseline multimodal sentiment analysis datasets,validating its effectiveness in emotion recognition tasks.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62188102,62174125,and 62131014).
文摘This study investigates the gate leakage mechanisms of AlN/GaN metal–insulator–semiconductor high-electronmobility transistors(MIS-HEMTs)fabricated on silicon substrate with Al_(2)O_(3)/SiN as stacked gate dielectrics,analyzing behaviors across high and low temperature conditions.In the high-temperature reverse bias region(T>275 K,V_(G)<0 V),Poole–Frenkel emission(PFE)dominates at low electric fields,while trap-assisted tunneling(TAT)is the primary mechanism at medium to high electric fields.The shift from PFE to TAT as the dominant conduction mechanism is due to the increased tunneling effect of electrons as the electric field strength rises.Additionally,TAT is found to be the main gate leakage mechanism under low-temperature reverse bias(T<275 K,V_(G)<0 V).At lower temperatures,the reduction in electron energy causes the emission process to rely more on electric field forces.Furthermore,under forward bias conditions at both high and low temperatures(225 K<T<375 K,V_(G)>0 V),conduction is primarily dominated by defect-assisted tunneling(DAT).
文摘Quantum circuit fidelity is a crucial metric for assessing the accuracy of quantum computation results and indicating the precision of quantum algorithm execution. The primary methods for assessing quantum circuit fidelity include direct fidelity estimation and mirror circuit fidelity estimation. The former is challenging to implement in practice, while the latter requires substantial classical computational resources and numerous experimental runs. In this paper, we propose a fidelity estimation method based on Layer Interleaved Randomized Benchmarking, which decomposes a complex quantum circuit into multiple sublayers. By independently evaluating the fidelity of each layer, one can comprehensively assess the performance of the entire quantum circuit. This layered evaluation strategy not only enhances accuracy but also effectively identifies and analyzes errors in specific quantum gates or qubits through independent layer evaluation. Simulation results demonstrate that the proposed method improves circuit fidelity by an average of 6.8% and 4.1% compared to Layer Randomized Benchmarking and Interleaved Randomized Benchmarking methods in a thermal relaxation noise environment, and by 40% compared to Layer RB in a bit-flip noise environment. Moreover, the method detects preset faulty quantum gates in circuits generated by the Munich Quantum Toolkit Benchmark, verifying the model’s validity and providing a new tool for faulty gate detection in quantum circuits.
基金The National Natural Science Foundation of China(No.52162042)General Science and Technology Project of Jiangxi Provincial Department of Transportation(No.2024YB039).
文摘By analyzing the bus operation environment and accounting for prediction uncertainties,a bus arrival interval prediction model was developed utilizing a gated recur-rent unit(GRU)neural network.To reduce the impact of irrelevant data and boost prediction accuracy,an attention mechanism was integrated into the point model to concen-trate on important input sequence information.Based on the point predictions,the lower upper bound estimation(LUBE)method was used,providing a range for the bus interval times predicted by the model.The model was vali-dated using data from 169 bus routes in Nanchang,Jiangxi Province.The results indicated that the attention-GRU model outperformed neural network,long short-term memory and GRU models.Compared with the Bootstrap method,the LUBE method has a narrower average interval width.The coverage width-based criterion(CWC)was reduced by 8.1%,2.2%,and 5.7%at confidence levels of 85%,90%,and 95%,respectively,during the off-peak period,and by 23.2%,26.9%,and 27.3%at confidence levels of 85%,90%,and 95%,respectively,during the peak period.Therefore,it can accurately describe the fluctuation range in bus arrival times with higher accuracy and stability.
文摘Molecular cloning remains a cornerstone technique in genetic engineering and synthetic biology.In this study,we conducted a systematic comparative analysis between the classical cloning method and the Golden Gate assembly technique,utilizing Escherichia coli as the model organism.Through polymerase chain reaction(PCR)amplification,restriction enzyme digestion,ligation,transformation,and Sanger sequencing,we assessed the operational efficiency and cloning fidelity of both strategies.Our results demonstrated that Golden Gate assembly,leveraging type IIS restriction enzymes and simultaneous ligation,significantly enhanced cloning efficiency and precision,particularly for seamless multi-fragment assembly.In contrast,the classical cloning approach maintained certain advantages in simplicity and robustness for specific experimental conditions.Challenges encountered during transformation and sequencing highlighted the critical impact of technical accuracy on experimental outcomes.This study underscores the importance of selecting appropriate cloning methodologies tailored to experimental objectives and laboratory capabilities,providing a foundation for optimized molecular cloning workflows in future synthetic biology and biotechnology applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.12322407,62122036,and 62034004)the Natural Science Foundation of Jiangsu Province(Grant No.BK20233001)+5 种基金the National Key R&D Program of China(Grant Nos.2023YFF0718400 and 2023YFF1203600)the Leading-edge Technology Program of Jiangsu Natural Science Foundation(Grant No.BK20232004)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44000000)Innovation Program for Quantum Science and Technologysupport from the Fundamental Research Funds for the Central Universities(Grant Nos.020414380227,020414380240,and 020414380242)the e-Science Center of Collaborative Innovation Center of Advanced Microstructures。
文摘Layer pseudospins,exhibiting quantum coherence and precise multistate controllability,present significant potential for the advancement of future computing technologies.In this work,we propose an in-memory probabilistic computing scheme based on the electrical manipulation of layer pseudospins in layered materials,by exploiting the interaction between real spins and layer pseudospins.
文摘The Sluice Gate with Freight Carts is the earliest extant scroll in China that depicted a water mill.It was drawn during the early or middle Northern Song dynasty and was possibly a true portrayal of the West Water Mill Office.The copresence of a banquet scene of the Northern Song dynasty’s scholar-officials and a water mill both suggests a realistic reproduction of a specific scene and indicates the significance of the water mill as a cultural space.The Northern Song dynasty’s government-operated water mills were especially noticeable in the Capital Circuit京畿路,whose center was Dongjing东京.The basic development path of government-operated water mills in the inner and outer city of Dongjing was first from grain processing,which supplied the needs of the imperial palace,to tea processing,in which the governmental commercial capital also participated.Regarding city space and the use of water sources,the development spread from the north of the city to the south.Other prefectures outside Dongjing also had government-operated water mills—some brought income that could be used as official fiscal expenditure,including military expenditure,and were used to satisfy the need of local people’s livelihood,while some were used to serve the monopoly policy of tea and demonstrate the benevolent governance of local officials.In the Northern Song dynasty,the water mill was no longer merely a production site;rather,it was also a cultural space that integrated a natural background and artificial ingenuity.Closely related to the hosting of emperors and the garden making,sightseeing,feasting,and drinking of scholar-officials,along with the festival activities of locals,the water mill in the Northern Song dynasty was of great cultural significance.
