a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It...a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It was found that the growth temperature was a key parameter for optimized surface morphologyand crystalline quality of the Ga_zIn_1-Sb epilayers. The influence of growth temperature on the Ga solidcomposition was previously explained. The Ga solid composition was proportional to the Ga vapor compositionand vapor Ⅲ/V ratio, respectively . The Ga distribution as efficient was found to be 1. 22 under the optimizedgrowth parameters and decreased with decreasing growth temperature. The results of Hall measurements forGa.InSb alloys at room temperature show a P-type background doping. The hole mobility of the best samplewas 377 cm￣2/V s with a hole concentration of 7. 6 x 10￣16 cm￣(-3).展开更多
文摘a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It was found that the growth temperature was a key parameter for optimized surface morphologyand crystalline quality of the Ga_zIn_1-Sb epilayers. The influence of growth temperature on the Ga solidcomposition was previously explained. The Ga solid composition was proportional to the Ga vapor compositionand vapor Ⅲ/V ratio, respectively . The Ga distribution as efficient was found to be 1. 22 under the optimizedgrowth parameters and decreased with decreasing growth temperature. The results of Hall measurements forGa.InSb alloys at room temperature show a P-type background doping. The hole mobility of the best samplewas 377 cm￣2/V s with a hole concentration of 7. 6 x 10￣16 cm￣(-3).
