The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas envi...The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas environment monitoring.In the research of two-section integrated optical chips,more attention is paid to their passive mode-locked characteristics.The ability of its structure to generate stable soliton transmission has not yet been studied,which will limit its further application in high-performance near-mid infrared optoelectronic technology.In this paper,we design and prepare a GaSb-based~2μm wave-length two-section integrated semiconductor laser chip structure,and test and analyze its related properties of soliton,includ-ing power−injection current−voltage(P−I−V),temperature and mode-locked characteristics.Experimental results show that the chip can achieve stable mode-locked operation at nearly~2μm wavelength and present the working characteristics of near opti-cal soliton states and multi-peak optical soliton states.By comparing and analyzing the measured optical pulse sequence curve with the numerical fitting based on the pure fourth order soliton approximation solution,it is confirmed that the two-section integrated optical chip structure can generate stable transmission of multi-peak optical soliton.This provides a research direc-tion for developing near-mid infrared mode-locked integrated optical chips with high-performance property of optical soliton.展开更多
We report a type-ⅡGaSb-based interband cascade laser operating a continuous wave at room temperature.The cascade region of interband cascade laser was designed using the‘W'configuration of the active quantum wel...We report a type-ⅡGaSb-based interband cascade laser operating a continuous wave at room temperature.The cascade region of interband cascade laser was designed using the‘W'configuration of the active quantum wells and the‘Carrier Rebalancing'method in the electron injector.The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink.The 25-μm-wide,3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T=15℃.And a low threshold current density of 267 A/cm^2 is achieved.The emission wavelength of the ICL is 3452.3 nm at 0.5 A.展开更多
In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaS...In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GalnAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I-V characteristic, maximum output power （Pmax）, open-circuit voltage （Voc）, short-circuit current （/~sc）, etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GalnAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.展开更多
The GaSb-based distributed Bragg reflection（DBR） diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma（ICP） etching. The ICP etching conditions we...The GaSb-based distributed Bragg reflection（DBR） diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma（ICP） etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio（SMSR） was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.展开更多
基金the National Natural Science Foundation of China(Grant Nos.62274048,62464006,62174046)the Ministry of Education,Singapore(Grant No.MOE-T2EP50121-0005)+1 种基金Hainan Province Science and Technology Special Fund(Grant No.ZDYF2025GXJS007)National Key R&D Program of China(Grant No.2023YFF0722400).
文摘The optical soliton characteristics of GaSb-based~2μm wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications,infrared countermeasures,and gas environment monitoring.In the research of two-section integrated optical chips,more attention is paid to their passive mode-locked characteristics.The ability of its structure to generate stable soliton transmission has not yet been studied,which will limit its further application in high-performance near-mid infrared optoelectronic technology.In this paper,we design and prepare a GaSb-based~2μm wave-length two-section integrated semiconductor laser chip structure,and test and analyze its related properties of soliton,includ-ing power−injection current−voltage(P−I−V),temperature and mode-locked characteristics.Experimental results show that the chip can achieve stable mode-locked operation at nearly~2μm wavelength and present the working characteristics of near opti-cal soliton states and multi-peak optical soliton states.By comparing and analyzing the measured optical pulse sequence curve with the numerical fitting based on the pure fourth order soliton approximation solution,it is confirmed that the two-section integrated optical chip structure can generate stable transmission of multi-peak optical soliton.This provides a research direc-tion for developing near-mid infrared mode-locked integrated optical chips with high-performance property of optical soliton.
基金Project supported by the Major Program of the National Natural Science Foundation of China(Grant No.61790580)the National Natural Science Foundation of China(Grant No.61435012)the National Basic Research Program of China(Grant No.2014CB643903)
文摘We report a type-ⅡGaSb-based interband cascade laser operating a continuous wave at room temperature.The cascade region of interband cascade laser was designed using the‘W'configuration of the active quantum wells and the‘Carrier Rebalancing'method in the electron injector.The devices were processed into narrow ridges and mounted epitaxial side down on a copper heat sink.The 25-μm-wide,3-mm-long ridge without coated facets generated 41.4 mW of continuous wave output power at T=15℃.And a low threshold current density of 267 A/cm^2 is achieved.The emission wavelength of the ICL is 3452.3 nm at 0.5 A.
基金Project supported by the National Natural Science Foundation of China (Grant No.61076010)the Project of State Key Laboratory on Integrated Optoelectronics (Grant No.IOSKL2012ZZ13)
文摘In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GalnAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I-V characteristic, maximum output power （Pmax）, open-circuit voltage （Voc）, short-circuit current （/~sc）, etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GalnAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.
基金Project supported by the National Basic Research Program of China(Nos.2016YFB0402403,2014CB643903)the National Natural Science Foundation of China(Nos.61790583,61435012)
文摘The GaSb-based distributed Bragg reflection（DBR） diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma（ICP） etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio（SMSR） was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.
