The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electr...The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD values. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high performance of 2.3 μm photodetectors were achieved only when the good quality GaSb wafers was used as the substrates.展开更多
文摘The properties of GaSb substrates commonly used for the preparation of Ⅲ Ⅴ antimonide epilayers were studied before and after growing GaInAsSb multi layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD values. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high performance of 2.3 μm photodetectors were achieved only when the good quality GaSb wafers was used as the substrates.
