The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device perfor...The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance;and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.展开更多
Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulatio...Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulation versus ion fluences was studied using highresolution X-ray diffraction(HRXRD)and ultraviolet–visible(UV–Vis)spectroscopy.The results showed that the damage accumulation was mainly dominated by nuclear energy loss.When the ion fluence was less than∼0.055 displacement per atom(dpa),the lattice expansions and lattice strains markedly increased linearly with increasing ion fluences,accompanied by a slow enhancement in the dislocation densities,distortion parameters,and Urbach energy for both ion irradiations.Above this fluence(∼0.055 dpa),the lattice strains presented a slight increase,whereas a remarkable increase was observed in the dislocation densities,distortion parameters,and Urbach energy with the ion fluences after both ion irradiations.∼0.055 dpa is the threshold ion fluence for defect evolution and lattice damage related to strain.The mechanisms underlying the damage accumulation are discussed in detail.展开更多
文摘The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance;and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.
基金supported by the Program for National Natural Science Foundation of China(No.11675231)the Sichuan Science and Technology Program(Nos.2022YFG0263 and 2024NSFSC1097)the Scientific Research Starting Foundation for talents(Nos.21zx7109 and 22zx7175,24ycx1005).
文摘Single-crystal GaN epilayers were irradiated with heavy inert gas ions(2.3-MeV Ne^(8+),5.3-MeV Kr^(19+))to fluences ranging from 1.0×1.0^(11) to 1.0×1.0^(15)ions∕cm^(2).The strain-related damage accumulation versus ion fluences was studied using highresolution X-ray diffraction(HRXRD)and ultraviolet–visible(UV–Vis)spectroscopy.The results showed that the damage accumulation was mainly dominated by nuclear energy loss.When the ion fluence was less than∼0.055 displacement per atom(dpa),the lattice expansions and lattice strains markedly increased linearly with increasing ion fluences,accompanied by a slow enhancement in the dislocation densities,distortion parameters,and Urbach energy for both ion irradiations.Above this fluence(∼0.055 dpa),the lattice strains presented a slight increase,whereas a remarkable increase was observed in the dislocation densities,distortion parameters,and Urbach energy with the ion fluences after both ion irradiations.∼0.055 dpa is the threshold ion fluence for defect evolution and lattice damage related to strain.The mechanisms underlying the damage accumulation are discussed in detail.
