Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distrib...Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations.It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K,whereas at 77 K,the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface.The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface,exhibiting a high sheet density of 2.2×10^(13)cm^(-2)and a mobility of 16.2 cm^(2)·V^(-1)·s^(-1)at 300 K.The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm.However,for p-GaN layers thinner than 30 nm,the 2DHG sheet density strongly depends on the p-GaN thickness,which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.展开更多
Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-c...Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-channel field-effect transistors(n-FETs),which poses a significant challenge for monolithic integration.In this study,we investigate the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures through semiconductor technology computer-aided design(TCAD)simulations and theoretical calculations,identifying the conditions necessary to achieve high-density 2DHG.Our simulations demonstrate that increasing the p-Ga N thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration:one corresponds to the onset of 2DHG formation,and the other to its saturation.Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation,although the saturated density remains independent of surface states.Additionally,a higher Al composition enhances intrinsic ionization due to stronger polarization effects,thereby increasing the 2DHG sheet density.Consequently,to achieve high-density 2DHG in p-Ga N/Al Ga N/Ga N heterostructures,it is essential to increase the Al composition,ensure that the p-Ga N thickness exceeds the critical thickness for 2DHG saturation,and maximize the acceptor ionization concentration.This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures and provides valuable guidance for the optimization of p-FET designs.展开更多
In this paper,we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT)with a gate-drain spacing L_(GD)=18.8μm.Compared with the regular DH HEMT,our circular struc...In this paper,we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT)with a gate-drain spacing L_(GD)=18.8μm.Compared with the regular DH HEMT,our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm.The power figure of meritV_(BR)~2/RON for the circular HEMT is as high as 1.03×10~9 V^2·Ω^(-1)·cm^(-2).The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure.Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.展开更多
The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （...The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.展开更多
AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·...AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.展开更多
CaN-based heterostructures with an InAlCaN/AlCaN composite barrier on sapphire （0001） substrates are grown by a low-pressure metal organic chemical vapor deposition system. Compositions of the InAiGaN layer are dete...CaN-based heterostructures with an InAlCaN/AlCaN composite barrier on sapphire （0001） substrates are grown by a low-pressure metal organic chemical vapor deposition system. Compositions of the InAiGaN layer are determined by x-ray photoelectron spectroscopy, structure and crystal quality of the heterostruetures are identified by high resolution x-ray diffraction, surface morphology of the samples are examined by an atomic force microscope, and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures. The Al/In ratio of the InAlGaN layer is 4.43, which indicates that the InAlCaN quaternary layer is nearly lattice-matched to the CaN channel. Capacitance-voltage results show that there is no parasitic channel formed between the InAIGaN layer and the AlCaN layer. Compared with the InAl- CaN/CaN heterostructure, the electrical properties of the InAlCaN/AlGaN/GaN heterostructure are improved obviously. Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied. With the optimal thickness of the AlGaN layer to be 5 nm, the 2DEG mobility, sheet density and the sheet resistance of the sample is 1889.61 cm2/V.s, 1.44 × 10^13 cm-2 and as low as 201.1 Ω/sq, respectively.展开更多
Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated.Measurement of the forward bias current-voltage behaviour of the device demonstrated a departure fro...Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated.Measurement of the forward bias current-voltage behaviour of the device demonstrated a departure from the Shockley model of a p-n diode,and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling.Electroluminescence experiments indicated that there was a main emission band around 2.80 eV and a relatively weaker peak at 3.2 eV.A significant blueshift of the optical emission band was observed,which was consistent with the tunnelling character of electrical characteristics.Furthermore,the degradation in I-V characteristics and the low resistance ohmic short of the device were observed.展开更多
Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HE...Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.展开更多
Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is...Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2024YFE0205000)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20243037)+2 种基金the National Natural Science Foundation of China(Grant Nos.62074077 and 61921005)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20231098)the Collab-orative Innovation Center of Solid State Lighting and Energy-Saving Electronics.
文摘Polarization-induced two-dimensional hole gases(2DHG)in GaN/AlGaN/GaN heterostructures offer a promising pathway for advancing p-channel transistors.This work investigates the impact of p-GaN thickness on hole distribution and transport through temperature-dependent Hall measurements and TCAD simulations.It is demonstrated that the p-channel is composed of holes both in the p-GaN layer and in the 2DHG at the GaN/AlGaN heterointerface at 300 K,whereas at 77 K,the p-channel conduction is dominated solely by the 2DHG at the GaN/AlGaN heterointerface.The results also reveal the formation of a polarization-induced 2DHG at the GaN/AlGaN interface,exhibiting a high sheet density of 2.2×10^(13)cm^(-2)and a mobility of 16.2 cm^(2)·V^(-1)·s^(-1)at 300 K.The 2DHG sheet density remains nearly independent of p-GaN thickness when the p-GaN layer exceeds 30 nm.However,for p-GaN layers thinner than 30 nm,the 2DHG sheet density strongly depends on the p-GaN thickness,which is attributed to the gradual extension of the depletion region toward the GaN/AlGaN interface under the influence of surface trap states.
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3604203)the Key Research and Development Program of Guangdong Province,China(Grant No.2024B0101060002)the Key Research and Development Program of Shenzhen City,China(Grant No.JCYJ20241202130036043)。
文摘Research on p-channel field-effect transistors(p-FETs)remains limited,primarily due to the significantly lower conductivity of the two-dimensional hole gas(2DHG)compared to the two-dimensional electron gas(2DEG)in n-channel field-effect transistors(n-FETs),which poses a significant challenge for monolithic integration.In this study,we investigate the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures through semiconductor technology computer-aided design(TCAD)simulations and theoretical calculations,identifying the conditions necessary to achieve high-density 2DHG.Our simulations demonstrate that increasing the p-Ga N thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration:one corresponds to the onset of 2DHG formation,and the other to its saturation.Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation,although the saturated density remains independent of surface states.Additionally,a higher Al composition enhances intrinsic ionization due to stronger polarization effects,thereby increasing the 2DHG sheet density.Consequently,to achieve high-density 2DHG in p-Ga N/Al Ga N/Ga N heterostructures,it is essential to increase the Al composition,ensure that the p-Ga N thickness exceeds the critical thickness for 2DHG saturation,and maximize the acceptor ionization concentration.This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-Ga N/Al Ga N/Ga N heterostructures and provides valuable guidance for the optimization of p-FET designs.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400100)the National Natural Science Foundation of China(Grant Nos.11435010,61474086,and 61804125)the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2016ZDJC-02)
文摘In this paper,we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor(DH HEMT)with a gate-drain spacing L_(GD)=18.8μm.Compared with the regular DH HEMT,our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm.The power figure of meritV_(BR)~2/RON for the circular HEMT is as high as 1.03×10~9 V^2·Ω^(-1)·cm^(-2).The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure.Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.
基金Project supported by the National Key R&D Program of China(Grant Nos.2016YFB0400803 and 2016YFB0401801)the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089)+1 种基金the Science Challenge Project,China(Grant No.TZ2016003)the Beijing Municipal Science and Technology Project,China(Grant No.Z161100002116037)
文摘The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002the National Basic Research Program of Chinathe National Science and Technology Major Project of China
文摘AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.
基金Supported by the National Science and Technology Major Project under Grant No 2013ZX02308-002the National Natural Science Foundation of China under Grant Nos 11435010,61474086 and 61334002
文摘CaN-based heterostructures with an InAlCaN/AlCaN composite barrier on sapphire （0001） substrates are grown by a low-pressure metal organic chemical vapor deposition system. Compositions of the InAiGaN layer are determined by x-ray photoelectron spectroscopy, structure and crystal quality of the heterostruetures are identified by high resolution x-ray diffraction, surface morphology of the samples are examined by an atomic force microscope, and Hall effect and capacitance-voltage measurements are performed at room temperature to evaluate the electrical properties of heterostructures. The Al/In ratio of the InAlGaN layer is 4.43, which indicates that the InAlCaN quaternary layer is nearly lattice-matched to the CaN channel. Capacitance-voltage results show that there is no parasitic channel formed between the InAIGaN layer and the AlCaN layer. Compared with the InAl- CaN/CaN heterostructure, the electrical properties of the InAlCaN/AlGaN/GaN heterostructure are improved obviously. Influences of the thickness of the AlGaN layer on the electrical properties of the heterostructures are studied. With the optimal thickness of the AlGaN layer to be 5 nm, the 2DEG mobility, sheet density and the sheet resistance of the sample is 1889.61 cm2/V.s, 1.44 × 10^13 cm-2 and as low as 201.1 Ω/sq, respectively.
基金Supported by the National Natural Science Foundation of China under Grant Nos.69806006,69636010,69976017 and 69987001the National High Technology Research&Development Project of China(No.863-715-011-0030).
文摘Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were investigated.Measurement of the forward bias current-voltage behaviour of the device demonstrated a departure from the Shockley model of a p-n diode,and it was observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunnelling.Electroluminescence experiments indicated that there was a main emission band around 2.80 eV and a relatively weaker peak at 3.2 eV.A significant blueshift of the optical emission band was observed,which was consistent with the tunnelling character of electrical characteristics.Furthermore,the degradation in I-V characteristics and the low resistance ohmic short of the device were observed.
文摘Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.
基金Supported by the Knowledge Innovation Project of the Chinese Academy of Sciencesthe National Natural Science Foundation of China under Grant Nos 61204017 and 61334002+1 种基金the National Basic Research Program of Chinathe National Science and Technology Major Project of China
文摘Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
