The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon ...The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.展开更多
针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应...针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.展开更多
In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.12494604,12393834,12393831,62274014,6223501662335015)the National Key R&D Program of China (Grant No.2024YFA1208900)。
文摘The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.
文摘针对传统模型因缺少对电磁相互作用的表征而导致高频精度不足的问题,以具有优异高频特性的磷化铟高电子迁移率场效应晶体管(indium phosphide high electron mobility field-effect transistor,InP HEMT)为例,提出一种引入寄生耦合效应的小信号等效电路模型与高频等效噪声电路模型.首先引入栅极–漏极之间的互感元件来模拟器件在高频下由于电磁相互作用产生的寄生耦合效应,并采用电磁仿真与直接参数提取相结合的建模方法,建立小信号等效电路模型.然后以所建小信号模型为基础,通过相关噪声矩阵与噪声参数的提取方法,建立高频等效噪声电路模型.实验结果表明,在500 MHz~50 GHz频段内,S参数最大误差小于3%,四噪声参数相较于传统模型提升约2.45%,并从小信号电流增益(|h21|)、单边功率增益(U)与最小噪声系数(Fmin)出发,评估了寄生耦合效应对高频性能的影响.
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
