Molecular beam epitaxy growth of GaAs on an offcut Ge （100） substrate has been systemically investigated. A high quality GaAs/Ge interface and CaAs film on Ge have been achieved. High temperature annealing before Ga...Molecular beam epitaxy growth of GaAs on an offcut Ge （100） substrate has been systemically investigated. A high quality GaAs/Ge interface and CaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality InonTGao.s3As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for Ⅲ-Ⅴcompound semiconductor optoelectronic devices on Ge substrates.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.60625405)the National Basic Research Program of China(Grant Nos.2007CB936304 and 2010CB327601)
文摘Molecular beam epitaxy growth of GaAs on an offcut Ge （100） substrate has been systemically investigated. A high quality GaAs/Ge interface and CaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality InonTGao.s3As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for Ⅲ-Ⅴcompound semiconductor optoelectronic devices on Ge substrates.
