The low coercivity is the major factor inhibiting the large-scale commercial utilization of Nd-Ce-Fe-B sintered magnets.In this work,we achieved a record-high coercivity of 15.04 kOe in Ga-doped Nd-Ce-Fe-B sintered ma...The low coercivity is the major factor inhibiting the large-scale commercial utilization of Nd-Ce-Fe-B sintered magnets.In this work,we achieved a record-high coercivity of 15.04 kOe in Ga-doped Nd-Ce-Fe-B sintered magnets with 30 wt%Ce replacing Nd,demonstrating enormous potential.The Ga-doped Nd-Ce-Fe-B magnets with higher boron(HB)and lower boron(LB)content are designed.The coercivity of the HB magnet increases slightly from 10.80 to 12.26 kOe after annealing,attributed to the optimized distribution of grain boundary(GB)phases.In contrast,the coercivity of the LB magnet remarkably increases from 8.13 to 15.04 kOe after annealing.Microstructural observations indicate that the narrow GB phase in the as-sintered magnet is rich in Fe,and the strong exchange coupling of adjacent grains resulted in low coercivity.The evolution of Ga-rich phases reveals a potential formation mechanism of the RE_(6)Fe_(13)Ga phase,that is the RE-Fe amorphous phase and REGa phase in the as-sintered magnet combine to form the RE_(6)Fe_(13)Ga phase and RE-Ga amorphous phase during post-sinter annealing(RE:rare earth).Moreover,the GB phase of the annealed magnet transforms into a Fe-lean phase with a thickness of 16.4 nm.Magnetization and demagnetization behavior characterizations reveal that the exchange decoupling of adjacent grains induced by the optimized GB phases is the main reason for the remarkable coercivity enhancement,which is also validated by micromagnetic simulations.展开更多
C-axis oriented Ga-doped ZnO(GZO) films with various thicknesses were deposited on glass substrate by radio frequency(RF) magnetron sputtering. The dependence of crystal structure,electrical,and optical properties of ...C-axis oriented Ga-doped ZnO(GZO) films with various thicknesses were deposited on glass substrate by radio frequency(RF) magnetron sputtering. The dependence of crystal structure,electrical,and optical properties of the GZO films on crystalline size were systematically studied. The results showed that the texture coefficient of (002) peak (TC(002)) decreases with increasing crystalline size. The Hall mobility m was reciprocal to electron effective mass and the fitted relaxation time s was 0.11±0.01 ms. With the increase of average crystalline size,the resistivity increased slightly,which is caused by the competition of (002) and(101) plane,introducing in some defects and leading to carrier density reduction. The optical band gap was in the range from 3.454 to 3.319 eV with increasing crystalline size from 26.96 to 30.88 nm,showing a negative relationship. The dependence of optical band gap (Eopg) on the crystalline size(R) can be qualitatively explained by a quantum confinement effect. The relationship between Eopg and R of GZO films suggests that tuning up optical properties for desired applications can be achieved by controlling the crystalline size.展开更多
Ga-doped Li_(7)La_(3)Zr_(2)O_(12)(Ga-LLZO)has long been considered as a promising garnet-type electrolyte candidate for all-solid-state lithium metal batteries(ASSLBs)due to its high room temperature ionic conductivit...Ga-doped Li_(7)La_(3)Zr_(2)O_(12)(Ga-LLZO)has long been considered as a promising garnet-type electrolyte candidate for all-solid-state lithium metal batteries(ASSLBs)due to its high room temperature ionic conductivity.However,the typical synthesis of Ga-LLZO is usually accompanied by the formation of undesired LiGaO_(2) impurity phase that causes severe instability of the electrolyte in contact with molten Li metal during half/full cell assembly.In this study,we show that by simply engineering the defect chemistry of Ga-LLZO,namely,the lithium deficiency level,LiGaO_(2) impurity phase is effectively inhibited in the final synthetic product.Consequently,defect chemistry engineered Ga-LLZO exhibits excellent electrochemical stability against lithium metal,while its high room temperature ionic conductivity(~1.9×10^(-3)S·cm^(-1))is well reserved.The assembled Li/Ga-LLZO/Li symmetric cell has a superior critical current density of 0.9 mA·cm^(-2),and cycles stably for 500 hours at a current density of 0.3 mA·cm^(-2).This research facilitates the potential commercial applications of high performance Ga-LLZO solid electrolytes in ASSLBs.展开更多
A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been s...A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.展开更多
Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） proc...Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.展开更多
Hydrogen,as an environmentally friendly energy source,is pivotal in its storage methods for its development and effective utilization.Graphene boasts advantages such as high specific surface area,excellent electrical ...Hydrogen,as an environmentally friendly energy source,is pivotal in its storage methods for its development and effective utilization.Graphene boasts advantages such as high specific surface area,excellent electrical properties,and high tunability,making it highly promising for hydrogen storage applications.Compared to monolayer graphene,bilayer graphene exhibits a more easily controllable bandgap,showcasing its potential for hydrogen storage.Additionally,to further enhance the hydrogen adsorption capability of graphene-based substrates,doping methods are commonly employed to adjust their electrical properties.This study proposes a model for hydrogen adsorption on bilayer graphene to investigate its hydrogen storage capacity.Specifically,density functional theory(DFT)computational methods are utilized to study the adsorption of single and multiple hydrogen molecules on monolayer and bilayer graphene,with or without doping with gallium atoms.Furthermore,the underlying reasons for the enhanced hydrogen adsorption in gallium-doped bilayer graphene are systematically analyzed and elucidated.The research findings indicate that pristine graphene exhibits relatively low sensitivity to hydrogen gas,with adsorption energies of only-0.078 and-0.096 eV for monolayer graphene(MG)and bilayer graphene(BG),respectively.However,upon doping gallium atoms into MG and BG,the adsorption energy significantly increases by approximately 30.8%and 54.1%.For adsorbing 8 H2,with average adsorption energies reaching-0.102 eV and-0.163 eV,which is primarily due to the electron in the s orbital of H has been transferred to the d orbital of transition metal Ga.These results indicate that gallium-doped bilayer graphene holds great promise as a hydrogen storage material.展开更多
An 8μm thick Ga-doped ZnO（GZO） film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode（LED） to substitute for the conventional ITO as a transparent conduct layer（TCL）. E...An 8μm thick Ga-doped ZnO（GZO） film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode（LED） to substitute for the conventional ITO as a transparent conduct layer（TCL）. Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6%as compared to an LED with an ITO TCL at 20 mA.In addition,the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED.To investigate the reason for the increase of the forward voltage,X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction.The large valence band offset（2.24±0.21 eV） resulting from the formation of Ga_2O_3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.展开更多
This work presents a surface plasmon resonance biosensor for the figure of merit enhancement by using Ga-doped zinc oxide(GZO),i.e.,nanostructured transparent conducting oxide as plasmonic material in place of metal a...This work presents a surface plasmon resonance biosensor for the figure of merit enhancement by using Ga-doped zinc oxide(GZO),i.e.,nanostructured transparent conducting oxide as plasmonic material in place of metal at the telecommunication wavelength.Two-dimentional graphene is used here as a biorecognition element(BRE)layer for stable and robust adsorption of biomolecules.This is possible due to stronger van der Waals forces between graphene’s hexagonal cells and carbon-like ring arrangement present in biomolecules.The proposed sensor shows improved biosensing due to fascinating electronic,optical,physical,and chemical properties of graphene.This work analyses the sensitivity,detection accuracy,and figure of merit for the GZO/graphene SPR sensor on using the dielectric layer in between the prism and GZO.The highest figure of merit of 366.7 RIU^(−1) is achieved for the proposed SPR biosensor on using the nanostructured GZO at the 3000 nm dielectric thickness.The proposed SPR biosensor can be used practically for sensing of larger size biomolecules with due availability of advanced techniques for the fabrication of the nanostructured GZO and graphene.展开更多
Gallium （Ga）-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant...Gallium （Ga）-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The （GaZn-VZ.）- complex defect, instead of the isolated VZn^2-, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a -0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements （-（0.82±0.02） eV）. These findings contribute to an essential understanding of the （GaZn-VZn）- complex defect and the potential engineering routes of heavily Ga-doped ZnO.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52261037,52088101)the Key research project of Jiangxi Province(No.20203ABC28W006)the Double-Thousand Plan of Jiangxi Province(No.jxsq2023101057).
文摘The low coercivity is the major factor inhibiting the large-scale commercial utilization of Nd-Ce-Fe-B sintered magnets.In this work,we achieved a record-high coercivity of 15.04 kOe in Ga-doped Nd-Ce-Fe-B sintered magnets with 30 wt%Ce replacing Nd,demonstrating enormous potential.The Ga-doped Nd-Ce-Fe-B magnets with higher boron(HB)and lower boron(LB)content are designed.The coercivity of the HB magnet increases slightly from 10.80 to 12.26 kOe after annealing,attributed to the optimized distribution of grain boundary(GB)phases.In contrast,the coercivity of the LB magnet remarkably increases from 8.13 to 15.04 kOe after annealing.Microstructural observations indicate that the narrow GB phase in the as-sintered magnet is rich in Fe,and the strong exchange coupling of adjacent grains resulted in low coercivity.The evolution of Ga-rich phases reveals a potential formation mechanism of the RE_(6)Fe_(13)Ga phase,that is the RE-Fe amorphous phase and REGa phase in the as-sintered magnet combine to form the RE_(6)Fe_(13)Ga phase and RE-Ga amorphous phase during post-sinter annealing(RE:rare earth).Moreover,the GB phase of the annealed magnet transforms into a Fe-lean phase with a thickness of 16.4 nm.Magnetization and demagnetization behavior characterizations reveal that the exchange decoupling of adjacent grains induced by the optimized GB phases is the main reason for the remarkable coercivity enhancement,which is also validated by micromagnetic simulations.
基金supported by the National Natural Science Foundation of China (No.51071038)Sichuan Province Science Foundation for Youths (No.2010JQ0002)State Key Laboratory for Mechanical Behavior of Materials,Xi’an Jiaotong University,China (No.20131309)
文摘C-axis oriented Ga-doped ZnO(GZO) films with various thicknesses were deposited on glass substrate by radio frequency(RF) magnetron sputtering. The dependence of crystal structure,electrical,and optical properties of the GZO films on crystalline size were systematically studied. The results showed that the texture coefficient of (002) peak (TC(002)) decreases with increasing crystalline size. The Hall mobility m was reciprocal to electron effective mass and the fitted relaxation time s was 0.11±0.01 ms. With the increase of average crystalline size,the resistivity increased slightly,which is caused by the competition of (002) and(101) plane,introducing in some defects and leading to carrier density reduction. The optical band gap was in the range from 3.454 to 3.319 eV with increasing crystalline size from 26.96 to 30.88 nm,showing a negative relationship. The dependence of optical band gap (Eopg) on the crystalline size(R) can be qualitatively explained by a quantum confinement effect. The relationship between Eopg and R of GZO films suggests that tuning up optical properties for desired applications can be achieved by controlling the crystalline size.
基金financially supported by the National Natural Science Foundation of China (Grant No.52171221)the National Key Research and Development Program of China (Grant No.2019YFA0704900)。
文摘Ga-doped Li_(7)La_(3)Zr_(2)O_(12)(Ga-LLZO)has long been considered as a promising garnet-type electrolyte candidate for all-solid-state lithium metal batteries(ASSLBs)due to its high room temperature ionic conductivity.However,the typical synthesis of Ga-LLZO is usually accompanied by the formation of undesired LiGaO_(2) impurity phase that causes severe instability of the electrolyte in contact with molten Li metal during half/full cell assembly.In this study,we show that by simply engineering the defect chemistry of Ga-LLZO,namely,the lithium deficiency level,LiGaO_(2) impurity phase is effectively inhibited in the final synthetic product.Consequently,defect chemistry engineered Ga-LLZO exhibits excellent electrochemical stability against lithium metal,while its high room temperature ionic conductivity(~1.9×10^(-3)S·cm^(-1))is well reserved.The assembled Li/Ga-LLZO/Li symmetric cell has a superior critical current density of 0.9 mA·cm^(-2),and cycles stably for 500 hours at a current density of 0.3 mA·cm^(-2).This research facilitates the potential commercial applications of high performance Ga-LLZO solid electrolytes in ASSLBs.
文摘A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.
基金supported by the Yeungnam University Research Grants in 2009
文摘Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.
基金funded by the Natural Science Foundation of China(grant No.U22A20434)the Open Project of Salt Lake Chemical Engineering Research Complex,Qinghai University(grant No.2023-DXSSKF-Z04)+1 种基金the Science and Technology Research Program of Chongqing Municipal Education Commission(grant No.2022CJZ042)Scientific Research Foundation of Ministry of Industry and Information Technology of the People's Republic of China(grant No.TC220A04A-43),Chongqing University of Technology。
文摘Hydrogen,as an environmentally friendly energy source,is pivotal in its storage methods for its development and effective utilization.Graphene boasts advantages such as high specific surface area,excellent electrical properties,and high tunability,making it highly promising for hydrogen storage applications.Compared to monolayer graphene,bilayer graphene exhibits a more easily controllable bandgap,showcasing its potential for hydrogen storage.Additionally,to further enhance the hydrogen adsorption capability of graphene-based substrates,doping methods are commonly employed to adjust their electrical properties.This study proposes a model for hydrogen adsorption on bilayer graphene to investigate its hydrogen storage capacity.Specifically,density functional theory(DFT)computational methods are utilized to study the adsorption of single and multiple hydrogen molecules on monolayer and bilayer graphene,with or without doping with gallium atoms.Furthermore,the underlying reasons for the enhanced hydrogen adsorption in gallium-doped bilayer graphene are systematically analyzed and elucidated.The research findings indicate that pristine graphene exhibits relatively low sensitivity to hydrogen gas,with adsorption energies of only-0.078 and-0.096 eV for monolayer graphene(MG)and bilayer graphene(BG),respectively.However,upon doping gallium atoms into MG and BG,the adsorption energy significantly increases by approximately 30.8%and 54.1%.For adsorbing 8 H2,with average adsorption energies reaching-0.102 eV and-0.163 eV,which is primarily due to the electron in the s orbital of H has been transferred to the d orbital of transition metal Ga.These results indicate that gallium-doped bilayer graphene holds great promise as a hydrogen storage material.
文摘An 8μm thick Ga-doped ZnO（GZO） film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode（LED） to substitute for the conventional ITO as a transparent conduct layer（TCL）. Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6%as compared to an LED with an ITO TCL at 20 mA.In addition,the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED.To investigate the reason for the increase of the forward voltage,X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction.The large valence band offset（2.24±0.21 eV） resulting from the formation of Ga_2O_3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.
基金supported by the Board of Research in Nuclear Sciences(BRNS)(Grant No.34/14/10/2017-BRNS/34285)Department of Atomic Energy(DAE),and Government of India.
文摘This work presents a surface plasmon resonance biosensor for the figure of merit enhancement by using Ga-doped zinc oxide(GZO),i.e.,nanostructured transparent conducting oxide as plasmonic material in place of metal at the telecommunication wavelength.Two-dimentional graphene is used here as a biorecognition element(BRE)layer for stable and robust adsorption of biomolecules.This is possible due to stronger van der Waals forces between graphene’s hexagonal cells and carbon-like ring arrangement present in biomolecules.The proposed sensor shows improved biosensing due to fascinating electronic,optical,physical,and chemical properties of graphene.This work analyses the sensitivity,detection accuracy,and figure of merit for the GZO/graphene SPR sensor on using the dielectric layer in between the prism and GZO.The highest figure of merit of 366.7 RIU^(−1) is achieved for the proposed SPR biosensor on using the nanostructured GZO at the 3000 nm dielectric thickness.The proposed SPR biosensor can be used practically for sensing of larger size biomolecules with due availability of advanced techniques for the fabrication of the nanostructured GZO and graphene.
基金supported by the National Natural Science Foundation of China(Grants Nos.11674405,and 11675280)
文摘Gallium （Ga）-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The （GaZn-VZ.）- complex defect, instead of the isolated VZn^2-, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a -0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements （-（0.82±0.02） eV）. These findings contribute to an essential understanding of the （GaZn-VZn）- complex defect and the potential engineering routes of heavily Ga-doped ZnO.
