In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narr...With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narrow band gap semiconductor of Bi_(2)O_(2)Se nanosheets(NSs)is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires(NWs)for demonstrating the impressive self-powered NIR photodetection.Benefiting from the built-in electric field of~140 meV,the as-constructed NW/NS mixeddimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA,high I_(light)/I_(dark)ratio of 82 and fast response times of<2/2 ms at room temperature.The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique.The excellent photodetection performance promises the asconstructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.展开更多
报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ...报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.展开更多
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
基金the Natural Science Foundation of Shandong Province(Nos.ZR2022JQ05 and ZR2024MF010).
文摘With high surface-to-volume ratio,the abundant surface states and high carrier concentration are challenging the nearinfrared photodetection behaviors of narrow band gap semiconductors nanowires.In this study,the narrow band gap semiconductor of Bi_(2)O_(2)Se nanosheets(NSs)is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires(NWs)for demonstrating the impressive self-powered NIR photodetection.Benefiting from the built-in electric field of~140 meV,the as-constructed NW/NS mixeddimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA,high I_(light)/I_(dark)ratio of 82 and fast response times of<2/2 ms at room temperature.The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique.The excellent photodetection performance promises the asconstructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.
文摘报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.
