A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a l...A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a low dark current of less than 3 nA at M=10 and high responsivity of 0.92 A/W at M=1.The gain bandwidth product of the device is above 80 GHz.The APD receiver exhibits a sensitivity of over-26 dBm at BER=10^-(12),which is sufficient for 10 Gb/s communication systems.展开更多
A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packa...A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.展开更多
AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave s...AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.展开更多
Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated ...Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.展开更多
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,...用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 .3) ,光荧光谱线窄 (FWHM=31me V)展开更多
基金Supported by the High-Technology Research and Development Program of China under Grant No 2006AA03Z421.
文摘A new planar InGaAs/InP avalanche photodiode(APD)is proposed and fabricated,which incorporates a high reflective AlGaInAs/InP distributed Bragg reflector(DBR)to improve its responsivity.The fabricated APD exhibits a low dark current of less than 3 nA at M=10 and high responsivity of 0.92 A/W at M=1.The gain bandwidth product of the device is above 80 GHz.The APD receiver exhibits a sensitivity of over-26 dBm at BER=10^-(12),which is sufficient for 10 Gb/s communication systems.
文摘A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.
基金supported by the National Natural Science Foundation of China under Grant Nos. 60777028,60723002, 60838003, 61006042, and 61061160502
文摘AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.
文摘Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.
文摘用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 .3) ,光荧光谱线窄 (FWHM=31me V)
