This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures ...This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.展开更多
对基于 Ga As/ Al Ga As系子带间吸收的一种新型量子阱红外探测器 ,采用 Poisson方程和 Schrodinger方程 ,计算了新器件结构的能带结构、电子分布特性 ,在此基础上采用热离子发射、热辅助遂穿模型对器件的暗电流特性进行了模拟 ,计算结...对基于 Ga As/ Al Ga As系子带间吸收的一种新型量子阱红外探测器 ,采用 Poisson方程和 Schrodinger方程 ,计算了新器件结构的能带结构、电子分布特性 ,在此基础上采用热离子发射、热辅助遂穿模型对器件的暗电流特性进行了模拟 ,计算结果与器件实测的暗电流特性吻合得很好 ,说明热离子发射、热辅助遂穿机制是形成器件暗电流的主要构成机制 ,增加垒高、降低阱中掺杂浓度及降低工作温度是抑制器件暗电流的主要途径 ,计算结果对进一步优化器件的设计将起到重要的理论指导作用 .展开更多
基金Work supported by the National Natural Science Foundation of China.
文摘This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.
