This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures ...This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.展开更多
基金Work supported by the National Natural Science Foundation of China.
文摘This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.
文摘采用全固态分子束外延(MBE)技术在InP衬底上生长InGaAsP材料,获得了与衬底之间没有失配位错且界面质量和发光质量较好的1.05 eV的InGaAsP材料。在此基础上,分别在InP衬底上生长InGaAsP单结太阳能电池以及GaAs衬底上生长GaInP/GaAs双结太阳能电池。利用晶圆键合技术将两个分立的电池键合制备成一个GaInP/GaAs/InGaAsP三结太阳电池。在地面光谱AM1.5G(Air Mass 1.5 Global)太阳模拟器下,GaInP/GaAs/InGaAsP晶圆键合太阳电池的转换效率为30.6%,聚光下获得了34%的效率。研究结果表明,MBE能够生长出材料质量佳的InGaAsP材料,室温晶圆键合技术在制备多结太阳能电池方面具有很大的潜力。