Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant li...Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.展开更多
This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conv...This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.展开更多
In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As...In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.展开更多
In the rapidly evolving field of modern technology,near-infrared(NIR)photodetectors are extremely crucial for efficient and reliable optical communications.The graphene/GaAs Schottky junction photodetector leverages g...In the rapidly evolving field of modern technology,near-infrared(NIR)photodetectors are extremely crucial for efficient and reliable optical communications.The graphene/GaAs Schottky junction photodetector leverages graphene’s exceptional carrier mobility and broadband absorption,coupled with GaAs’s strong absorption in the NIR spectrum,to achieve high responsivity and rapid response times.Here,we present a NIR photodetector employing a graphene/GaAs Schottky junction tailored for communication wavelengths.We fabricated high-performance graphene/GaAs Schottky junction devices with interdigitated electrodes of varying finger widths,systematically investigating their impact on device performance.The experimental results demonstrate that incorporating interdigitated electrodes significantly enhances the collection efficiency of photogenerated carriers in graphene/GaAs photodetectors.When illuminated by 808 nm NIR light at an intensity of 7.23 mW/cm^(2),the device achieves an impressive switch ratio of 10^(7),along with a high responsivity of 40.1 mA/W and a remarkable detectivity of 2.89×10^(13)Jones.Additionally,the device is characterized by rapid response times,with rise and fall times of 18.5 and 17.5μs,respectively,at a 3 dB bandwidth.These findings underscore the significant potential of high-performance graphene/GaAs photodetectors for applications in NIR optoelectronic systems.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12374459,61974138,and 92065106)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302400)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043)。
文摘Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.
文摘This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.12164030)Young Science and Technology Talents of Inner Mongolia,China(Grant No.NJYT22101)+1 种基金the Central Government Guides Local Science,the Technology Development Fund Projects(Grant No.2023ZY0005)the Science and Technology Plan Projects of Inner Mongolia Autonomous Region of China(Grant No.2023KYPT0012)。
文摘In the last few years,research on advanced ultrafast photonic devices has attracted great interest from laser physicists.As a semiconductor material with excellent nonlinear saturation absorption characteristics,Ga As has been used in solidstate and fiber lasers as a mode-locker.However,the pulse widths that have been reported in the searchable published literature are all long and the shortest is tens of picoseconds.Femtosecond pulse widths,desired for a variety of applications,have not yet been reported in Ga As-based pulsed lasers.In this work,we further explore the nonlinear characteristics of Ga As that has been magnetron sputtered onto the surface of a tapered fiber and its application in the generation of femtosecond lasing via effective dispersion optimization and nonlinearity management.With the enhanced interaction between evanescent waves and Ga As nanosheets,mode-locked soliton pulses as short as 830 fs are generated at repetition rates of 4.64 MHz.As far as we know,this is the first time that femtosecond-level pulses have been generated with a Ga As-based saturable absorber.In addition,soliton molecules,including in the dual-pulse state,are also realized under stronger pumping.This work demonstrates that Ga As-based photonic devices have good application prospects in effective polymorphous ultrashort pulsed laser generation.
基金supported by the National Natural Science Foundation of China(62375279)Suzhou Industrial Science and Technology Program(SYG202340,SJC2023004)Distinguished Young Scholar Fund of Natural Science Foundation of Jiangsu Province(BK20240125).
文摘In the rapidly evolving field of modern technology,near-infrared(NIR)photodetectors are extremely crucial for efficient and reliable optical communications.The graphene/GaAs Schottky junction photodetector leverages graphene’s exceptional carrier mobility and broadband absorption,coupled with GaAs’s strong absorption in the NIR spectrum,to achieve high responsivity and rapid response times.Here,we present a NIR photodetector employing a graphene/GaAs Schottky junction tailored for communication wavelengths.We fabricated high-performance graphene/GaAs Schottky junction devices with interdigitated electrodes of varying finger widths,systematically investigating their impact on device performance.The experimental results demonstrate that incorporating interdigitated electrodes significantly enhances the collection efficiency of photogenerated carriers in graphene/GaAs photodetectors.When illuminated by 808 nm NIR light at an intensity of 7.23 mW/cm^(2),the device achieves an impressive switch ratio of 10^(7),along with a high responsivity of 40.1 mA/W and a remarkable detectivity of 2.89×10^(13)Jones.Additionally,the device is characterized by rapid response times,with rise and fall times of 18.5 and 17.5μs,respectively,at a 3 dB bandwidth.These findings underscore the significant potential of high-performance graphene/GaAs photodetectors for applications in NIR optoelectronic systems.
