Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant li...Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.展开更多
This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conv...This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12374459,61974138,and 92065106)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302400)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043)。
文摘Anti-phase domain defects easily form in the in-plane GaAs nanowires(NWs)grown on CMOS-compatiblegroup IV substrates,which makes it difficult to obtain GaAs NWs with a designed length and also leads to asignificant limitation in the growth of high-quality in-plane GaAs NW networks on such substrates.Here,wereport on the selective area growth of anti-phase domain-free in-plane GaAs NWs and NW networks on Ge(111)substrates.Detailed structural studies confirm that the GaAs NW grown using a large pattern period and GaAsNW networks grown by adding the Sb are both high-quality pure zinc-blende single crystals free of stackingfaults,twin defects,and anti-phase domain defects.Room-temperature photoluminescence measurements show asubstantial improvement in crystal quality and good consistency and uniformity of the GaAs NW networks.Ourwork provides useful insights into the controlled growth of high-quality anti-phase domain-defects-free in-planeIII-V NWs and NW networks.
文摘This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.
