期刊文献+
共找到520篇文章
< 1 2 26 >
每页显示 20 50 100
Making titanium alloys ultrahigh strength and toughness synergy through deformation kinks-me diate d hierarchical α-precipitation 被引量:1
1
作者 Keer Li Wei Chen +2 位作者 Jinyu Zhang Shewei Xin Jun Sun 《Journal of Materials Science & Technology》 2025年第4期142-159,共18页
Titanium alloys engineered in structural applications achieve ultrahigh strength primarily through precipitation strengthening of secondary α-phase(αs)during aging,while they often experience compromised ductility a... Titanium alloys engineered in structural applications achieve ultrahigh strength primarily through precipitation strengthening of secondary α-phase(αs)during aging,while they often experience compromised ductility and toughness due to traditional strength-toughness tradeoff.In this study,we propose a novel strategy to address this conflict by introducing deformation kinks prior to conventional cold rolling(CR)and aging processes.These kinks are produced by cold forging(CF)to create macroscopic lamellar structures in β-grains,which alter strain partitioning during subsequent CR and ultimately tailor α_(s)-precipitation upon aging.As a result,an ultrafine duplex(αe+β)-structure is formed within kink interi-ors,while hierarchicalαs-precipitates are generated in the external β-matrix.This unique microstructure effectively enhances dislocation activity,promotes uniform plastic strain distribution and impedes crack propagation.Consequently,a simple Ti-V binary titanium alloy exhibits exceptional properties with ultra-high strength∼1636 MPa,decent ductility∼5.4% and appreciable fracture toughness∼36.1 MPa m^(1/2).The synergetic properties surpass those obtained through traditional CR and aging processes for the alloy and even outperform numerous multielement engineering titanium alloys reported in literature.Our findings open up a new avenue for overcoming the strength-toughness tradeoffof ultrahigh-strength titanium alloys,and also offer a facile production route towards structural materials for advanced performance. 展开更多
关键词 Titanium alloys Strength-toughness synergy kink PRECIPITATION Deformation and damage
原文传递
Exploring kink strengthening in WZ21 magnesium alloy via slow solidification and extrusion
2
作者 Drahomír Dvorský Yoshihito Kawamura +7 位作者 Shin-Ichi Inoue Soya Nishimoto JiríKubásek Anna Boukalová Miroslav Cavojský Luděk Heller Jan Duchoň Dalibor Vojtěch 《Journal of Magnesium and Alloys》 2025年第5期2155-2173,共19页
The Mg-Y-Zn magnesium alloy system is known for the presence of Long-Period Stacking Ordered(LPSO)phases that improves strength and ductility with minimal amounts of alloying elements.Even better improvements are asso... The Mg-Y-Zn magnesium alloy system is known for the presence of Long-Period Stacking Ordered(LPSO)phases that improves strength and ductility with minimal amounts of alloying elements.Even better improvements are associated with the specific microstructure known as the Mille-Feuille(MF)structure that can occur in this alloy as well after proper heat treatment.This study systematically compares the traditional ingot metallurgy method with the Bridgman method(slow cooling),coupled with diverse heat treatments and extrusion process.Microscopic analyses reveal variations in the presence of LPSO phases,MF structure,and especially grain size,leading to divergent mechanical and corrosion properties.The Bridgman approach surprisingly stands out,ensuring superior mechanical properties due to kink and texture strengthening. 展开更多
关键词 Slow solidification EXTRUSION kink Mechanical properties Mille-Feuille Corrosion
在线阅读 下载PDF
Kinked Rebar and Engineering Structures Applying Kinked Materials:State-ofthe-Art Review
3
作者 Chengquan Wang Lei Xu +4 位作者 Xinquan Wang Yun Zou Kangyu Wang Boyan Ping Xiao Li 《Structural Durability & Health Monitoring》 2025年第2期233-263,共31页
Kinked rebar is a special type of steel material,which is installed in beam column nodes and frame beams.It effectively enhances the blast resilience,seismic collapse resistance,and progressive collapse resistance of ... Kinked rebar is a special type of steel material,which is installed in beam column nodes and frame beams.It effectively enhances the blast resilience,seismic collapse resistance,and progressive collapse resistance of reinforced concrete(RC)structures without imposing substantial cost burdens,thereby emerging as a focal point of recent research endeavors.On the basis of explaining the working principle of kinked rebars,this paper reviews the research status of kinked rebars at home and abroad from three core domains:the tensile mechanical properties of kinked rebars,beam column nodes with kinked rebars,and concrete frame structures with kinked rebars.The analysis underscores that the straightening process of kinked rebars does not compromise their ultimate strength but significantly bolsters structural ductility and enhances energy dissipation capabilities.In beam-column joints,the incorporation of kinked rebars facilitates the seamless transfer of plastic hinges,adhering to the design principle of“strong columns and weak beams.”In addition,kinked rebars can greatly improve the resistance of the beam;The seismic resistance,internal explosion resistance,and progressive collapse resistance of reinforced concrete frame structures with kinked rebar have significantly improved.Beyond its primary application,the principle of kinked rebar was extended to other applications of kinked materials such as corrugated steel plates and origami structures,and the stress characteristics of related components and structures were studied.Intriguingly,this paper also proposes the application of kinked rebars in bridge engineering,aiming to address the challenges of localized damage concentration and excessive residual displacement in RC bridge piers.The introduction of kinked rebars in piers is envisioned to mitigate these issues,with the paper outlining its advantages and feasibility,thereby offering valuable insights for future research on kinked reinforcement and seismic design strategies for bridges. 展开更多
关键词 Structural engineering kinked rebar seismic performance explosion-resistant performance progressive collapse
在线阅读 下载PDF
电离辐射中SOI MOSFETs的背栅异常kink效应研究 被引量:1
4
作者 刘洁 周继承 +5 位作者 罗宏伟 孔学东 恩云飞 师谦 何玉娟 林丽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第1期149-152,共4页
采用10keVX射线研究了部分耗尽SOIMOSFETs的总剂量辐射效应.实验结果显示,在整个辐射剂量范围内,前栅特性保持良好;而nMOSFET和pMOSFET的背栅对数Id-Vg2曲线中同时出现了异常kink效应.分析表明电离辐射在埋氧/顶层硅(BOX/SOI)界面处产... 采用10keVX射线研究了部分耗尽SOIMOSFETs的总剂量辐射效应.实验结果显示,在整个辐射剂量范围内,前栅特性保持良好;而nMOSFET和pMOSFET的背栅对数Id-Vg2曲线中同时出现了异常kink效应.分析表明电离辐射在埋氧/顶层硅(BOX/SOI)界面处产生的界面态陷阱是导致异常kink效应产生的原因.基于MEDICI的二维器件模拟结果进一步验证了这个结论. 展开更多
关键词 X射线 SOI MOSFETS 部分耗尽 kink效应 总剂量效应
在线阅读 下载PDF
纤维卷曲指数和KinK指数对浆张强度的影响 被引量:31
5
作者 洪传真 刘桂南 《中国造纸学报》 CAS CSCD 北大核心 1997年第B12期70-75,共6页
研究了漂白针、阔叶木硫酸盐浆打浆后的纤维卷曲指数和KinK指数,结果表明:纤维卷曲指数和KinK指数是衡量纤维形态的重要指标,打浆能改变纤维的卷曲指数和KinK指数,并对手抄片的强度性能有一定的影响。
关键词 卷曲 打浆 纤维形态 阔叶木硫酸盐浆 漂白 强度性能 研究
在线阅读 下载PDF
SOI-NMOS场效应晶体管的Kink特性分析 被引量:1
6
作者 李秀琼 M.Tack +2 位作者 E.Simoen C.Claeys G.Declerck 《电子学报》 EI CAS CSCD 北大核心 1990年第2期50-56,共7页
本文研究了在室温(RT)、液氮温度(LN)和液氮温度(LHe)下的SOI-NMOS场效应晶体管的电流—电压特性。研究的器件制作在二氧化硅上的经激光退火后的多晶硅薄膜体上。结果表明室温下带有薄膜引出端的晶体管的I_D—V_D特性曲线的Kink形状和... 本文研究了在室温(RT)、液氮温度(LN)和液氮温度(LHe)下的SOI-NMOS场效应晶体管的电流—电压特性。研究的器件制作在二氧化硅上的经激光退火后的多晶硅薄膜体上。结果表明室温下带有薄膜引出端的晶体管的I_D—V_D特性曲线的Kink形状和液氦下观测到的N-MOS场效应晶体管的Kink形状很类似。实验还表明Kink大小是液氮下比室温下大、液氦下比液氮下的大。应用电容效应,低温下载流子“冻结”机制和不同偏压下载流子产生和复合的物理过程分析可以相应地解释不同温度下Kink效应。 展开更多
关键词 场效应 晶体管 kink特性 SOI-NMOS
在线阅读 下载PDF
HEMT的Kink效应和低频偏移效应解析模型 被引量:1
7
作者 张义门 吴拥军 张玉明 《电子学报》 EI CAS CSCD 北大核心 1997年第11期14-17,共4页
本文在考虑到界面态陷阱的基础上,建立了HEMT的静态和交流小信号解析模型,该模型能够正确地描述HEMT的Kink效应和低频偏移效应,并和实验符合相当好.文中还深入讨论了In组分和偏置的影响.
关键词 晶体管 Knik效应 低频偏移效应 HEMT
在线阅读 下载PDF
一种能抑制HBT Kink效应的新型复合管
8
作者 滑育楠 梁聪 +2 位作者 高怀 杨立武 李贯平 《半导体技术》 CAS CSCD 北大核心 2010年第7期669-672,共4页
介绍了GaAs异质结双极型晶体管(HBT)的Kink效应及其对宽带匹配的影响,并根据负反馈原理,提出了一种新型的HBT复合管结构。通过对该结构进行小信号分析和计算机软件仿真,该复合晶体管在整个测试频段内输出阻抗接近于一个简单的RC串联电... 介绍了GaAs异质结双极型晶体管(HBT)的Kink效应及其对宽带匹配的影响,并根据负反馈原理,提出了一种新型的HBT复合管结构。通过对该结构进行小信号分析和计算机软件仿真,该复合晶体管在整个测试频段内输出阻抗接近于一个简单的RC串联电路,并且输出电阻在很宽的频率范围内保持稳定。采用2μm InGaP/GaAs HBT半导体工艺技术流片测试,结果表明,在0.1-20 GHz(接近该HBT的截止频率)的频率范围内所提出的新型HBT复合管抑制了Kink效应并与理论分析结果及计算机仿真结果相吻合。采用该复合管作为宽带放大器的有源器件可以在很大程度上简化匹配电路的设计并且不会显著增加芯片面积和功耗。 展开更多
关键词 宽带匹配 kink效应 S参数 异质结双极晶体管
原文传递
H型栅NMOS器件Kink效应的研究
9
作者 徐大为 彭宏伟 +2 位作者 秦鹏啸 王青松 董海南 《电子元件与材料》 CAS 北大核心 2024年第1期55-60,共6页
H型栅NMOS器件因其强抗辐照和低功耗等优势已逐渐成为PDSOI电路设计中的核心器件。但H型栅NMOS器件的Ids-Vds曲线会在漏极电压较高时发生明显的翘曲现象,称为Kink效应。该效应严重影响一定工作条件下的电路性能和稳定性。为此,依据实测... H型栅NMOS器件因其强抗辐照和低功耗等优势已逐渐成为PDSOI电路设计中的核心器件。但H型栅NMOS器件的Ids-Vds曲线会在漏极电压较高时发生明显的翘曲现象,称为Kink效应。该效应严重影响一定工作条件下的电路性能和稳定性。为此,依据实测和TCAD仿真数据,分析了H型栅NMOS器件发生Kink效应的机理,并且基于0.15μm SOI工艺,进一步量化分析了顶层硅膜厚度、阱浓度、栅尺寸、温度以及总剂量辐照等方面对Kink效应的影响。最终结果表明,高漏极电压下NMOS器件体区积累大量空穴导致寄生NPN三极管开启,从而引发了Kink效应。本工作完善了H型栅NMOS器件Kink效应的研究,为PDSOI电路设计中抑制Kink效应提供了有益的参考。 展开更多
关键词 H型栅NMOS kink效应 PDSOI 总剂量辐照 TCAD
在线阅读 下载PDF
Kink效应对低温CMOS读出电路的影响 被引量:6
10
作者 刘文永 冯琪 丁瑞军 《激光与红外》 CAS CSCD 北大核心 2007年第B09期990-992,共3页
在深低温下(T<50K),CMOS器件会出现Kink效应,即I-V特性曲线会发生扭曲。当漏源电压较大时(Vds>4V),漏电流突然加大,电流曲线偏离正常的平方关系。本文通过实验表明,Kink效应对CMOS读出电路中的一些电路结构产生较严重的影响,Kink... 在深低温下(T<50K),CMOS器件会出现Kink效应,即I-V特性曲线会发生扭曲。当漏源电压较大时(Vds>4V),漏电流突然加大,电流曲线偏离正常的平方关系。本文通过实验表明,Kink效应对CMOS读出电路中的一些电路结构产生较严重的影响,Kink效应会导致源跟随器输出产生严重的非线性;对于共源放大器和两级运放,Kink效应会使其增益产生非线性。最后,针对影响低温读出电路性能的Kink效应进行分析和研究,提出在低温CMOS读出集成电路设计中如何解决这些问题的方案。 展开更多
关键词 kink效应 CMOS读出电路 低温 非线性 宏模型
在线阅读 下载PDF
LDD工艺参数对多晶硅薄膜晶体管KINK效应的影响 被引量:1
11
作者 丁磊 许剑 +2 位作者 韩郑生 梅沁 钟传杰 《液晶与显示》 CAS CSCD 北大核心 2008年第2期173-177,共5页
利用Tsuprem4和Medici软件,研究了多晶硅薄膜晶体管的LDD掺杂参数,如掺杂剂量、离子注入能量对KINK效应的影响,得到了它们之间的关系。计算结果表明,随着LDD掺杂剂量的变化,KINK效应对器件的影响是非线性的且存在一个最小值,在掺杂为2&#... 利用Tsuprem4和Medici软件,研究了多晶硅薄膜晶体管的LDD掺杂参数,如掺杂剂量、离子注入能量对KINK效应的影响,得到了它们之间的关系。计算结果表明,随着LDD掺杂剂量的变化,KINK效应对器件的影响是非线性的且存在一个最小值,在掺杂为2×1012cm-2时达到最小。而LDD掺杂能量对KINK效应的影响是线性的,即随着离子注入能量的增加,KINK效应的影响变小。 展开更多
关键词 多晶硅薄膜晶体管 kink效应 MEDICI Tsuprem4
在线阅读 下载PDF
多晶硅薄膜晶体管kink效应的建模 被引量:1
12
作者 陈婷 李斌 《微电子学与计算机》 CSCD 北大核心 2008年第6期222-224,228,共4页
从kink效应产生的物理机理出发,介绍了目前国内外研究多晶硅薄膜晶体管kink电流所采用的两种主要方法.一种是基于面电荷的方法,另一种是基于求雪崩倍增因子的方法.kink效应具体表现为器件在饱和区跨导和漏电流的显著增加.在数字电路中,k... 从kink效应产生的物理机理出发,介绍了目前国内外研究多晶硅薄膜晶体管kink电流所采用的两种主要方法.一种是基于面电荷的方法,另一种是基于求雪崩倍增因子的方法.kink效应具体表现为器件在饱和区跨导和漏电流的显著增加.在数字电路中,kink效应会引起功耗的增加和开关特性的退化;而在模拟电路中,kink效应将降低最大增益和共模抑制比.因此,多晶硅薄膜晶体管kink效应的研究对液晶显示的发展具有重大意义. 展开更多
关键词 多晶硅薄膜晶体管 kink效应 面电荷 倍增因子
在线阅读 下载PDF
多晶硅薄膜晶体管Kink效应研究与建模
13
作者 陈荣盛 郑学仁 +3 位作者 邓婉玲 姚若河 吴朝晖 吴为敬 《半导体技术》 CAS CSCD 北大核心 2008年第3期231-234,共4页
多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿... 多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用。随着尺寸的不断缩小,P-Si TFT的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大。对发生Kink效应的物理机制、二维数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望。 展开更多
关键词 多晶硅薄膜晶体管 kink 效应 建模
在线阅读 下载PDF
Effect of the Plasma Pressure on Magnetohydrodynamic Kink Instability in a Cylindrical Geometry 被引量:10
14
作者 代玉杰 刘金远 王学慧 《Plasma Science and Technology》 SCIE EI CAS CSCD 2009年第3期269-273,共5页
A semi-analytical method is introduced to study kink instability in cylindrical plasma with line-tied boundary conditions. The method is based on an expansion for magnetohydrodynamics (MHD) equations in one-dimensio... A semi-analytical method is introduced to study kink instability in cylindrical plasma with line-tied boundary conditions. The method is based on an expansion for magnetohydrodynamics (MHD) equations in one-dimensional (1D) radial eigenvalue problems by using Fourier transforms. The MHD equations then become an ordinary differential equation. This method is applicable to both ideal and non-ideal MHD problem. The effect of plasma pressure (P0) on kink instability is studied in a cylindrical geometry. Complex discrete spectra are pre- sented. Two-dimensional (2D) eigenfunctions with the line-tied boundary conditions are obtained. The growth rate and radial eigenfunctions are different in the two cases of P0 = 0 and P0 ≠ 0, which indicate that the effect of plasma pressure can not be ignored if it is large enough. This method allows us to understand the role of individual radial eigenfunctions, and is also computationally efficient compared to direct solutions of the MHD equations by the finite difference method. 展开更多
关键词 plasma pressure Fourier transforms MHD kink instability
在线阅读 下载PDF
C(3,2,2)方程的Compacton解和Kink-Compacton解
15
作者 王伟 陈爱永 朱文静 《桂林电子科技大学学报》 2015年第6期489-495,共7页
为了探讨C(3,2,2)方程中参数对其行波解动力学行为的影响,利用平面动力系统,获得了该方程在不同参数下的孤立波解、Compacton解、Kink波解和Kink-Compacton解,并给出这些解的参数表达式。
关键词 动力系统 孤立波解 COMPACTON解 kink波解 kink-Compacton解
在线阅读 下载PDF
Three-Dimensional Simulation of Plasma Deformation During Contact Opening in a Circuit Breaker,Including the Analysis of Kink Instability and Sausage Instability 被引量:4
16
作者 Vahid ABBASI Ahmad GHOLAMI Kaveh NIAYESH 《Plasma Science and Technology》 SCIE EI CAS CSCD 2012年第11期996-1001,共6页
A three-dimensional (3-D) transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric cur... A three-dimensional (3-D) transient model has been developed to investigate plasma deformation driven by a magnetic field and its influence on arc stability in a circuit breaker. The 3-D distribution of electric current density is obtained from a current continuity equation along with the generalized Ohm's law; while the magnetic field induced by the current flowing through the arc column is calculated by the magnetic vector potential equation. When gas interacts with an arc column, fundamental factors, such as Ampere's law, Ohm's law, the turbulence model, transport equations of mass, momentum and energy of plasma flow, have to be coupled for aria- lyzing the phenomenon. The coupled interactions between arc and plasma flow are described in the fl'amework of time-dependent magnetohydrodynamic (MHD) equations in conjunction with a K-~ turbulence model. Simulations have been focused on sausage and kink instabilities in plasma (these phenomena are related tO pinch effects and electromagnetic fields). The 3-D sjm- ulation reveals the relation between plasma deformation and instability phenomena, which affect arc stability during circuit breaker operation. Plasma deformation is the consequence of coupled interactions between the electromagnetic force and plasma flow described in simulations. 展开更多
关键词 magnetohydrodynamic (MHD) plasma deformation electromagnetic force kink instability sausage instability
在线阅读 下载PDF
SOI器件的kink效应研究
17
作者 王青松 彭宏伟 +3 位作者 黄天 杨正东 朱少立 徐大为 《固体电子学研究与进展》 CAS 北大核心 2022年第3期225-229,共5页
研究了SOI器件中的kink效应,主要包括不同器件类型、不同体接触结构、沟道长度以及栅氧厚度对kink效应的影响。研究发现NMOS器件由于能够产生较多的电子空穴对,在输出特性曲线中呈现明显的kink效应,而PMOS器件由于空穴的电离率较低,碰... 研究了SOI器件中的kink效应,主要包括不同器件类型、不同体接触结构、沟道长度以及栅氧厚度对kink效应的影响。研究发现NMOS器件由于能够产生较多的电子空穴对,在输出特性曲线中呈现明显的kink效应,而PMOS器件由于空穴的电离率较低,碰撞电离产生的电子-空穴对远低于NMOS器件,它的kink效应不明显。对源体短接、H型栅和T型栅三种不同结构的NMOS器件进行研究,发现T型栅器件kink效应最明显。比较了不同沟道长度对kink效应的影响,发现沟道越短,kink效应越明显。比较了栅氧厚度对kink效应的影响,发现随着栅氧厚度减小,kink效应越明显,这主要是由于隧穿电流引起的。 展开更多
关键词 SOI器件 kink效应 I-V特性
原文传递
Modeling the Dynamic Recrystallization of Mg–11Gd–4Y–2Zn–0.4Zr Alloy Considering Non-uniform Deformation and LPSO Kinking During Hot Compression 被引量:2
18
作者 Hong-Xuan Zhang Shuai-Feng Chen +2 位作者 Ming Cheng Ce Zheng Shi-Hong Zhang 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2019年第9期1122-1134,共13页
Hot compression tests of Mg–11 Gd–4 Y–2 Zn–0.4 Zr alloy(GWZK114)were conducted at a deformation temperature range of 300–500°C and a strain rate range of 0.01–10.0 s-1.Based on systematic microstructure obs... Hot compression tests of Mg–11 Gd–4 Y–2 Zn–0.4 Zr alloy(GWZK114)were conducted at a deformation temperature range of 300–500°C and a strain rate range of 0.01–10.0 s-1.Based on systematic microstructure observation,it is confirmed that long period stacking ordered(LPSO)phase displays essential and evolving roles on the dynamic recrystallization(DRX)behavior.The results indicate that the plastic deformation is mainly coordinated by simultaneous exist of LPSO kinking of lamella 14 H-LPSO phase and DRX at 350–450℃,and DRX at 500℃.Further,it is found that the LPSO kinking induced during 350–450℃can delay the DRX.A phenomenological DRX model of GWZK114 alloy is established to be XDRX=1.exp[-0.5((ε-εc)/ε^*)0.91].Non-uniform distribution of plastic strain during compression was considered via finite element method and it ensures a good prediction of DRX fraction under a large plastic strain.Meanwhile,an enhanced DRX model,taking its formulation as XDRX={1.exp[-0.5((ε-εc)/ε*)0.91]}(T/(226.8)-1)n,n=3.82ε0.083,is proposed for the first time to capture the hindering effect of 14 H-LPSO kinking on DRX behavior.The predicted results of this enhanced DRX model agree well with the experimental cases,where 14 H-LPSO kinking is dominated or partially involved(300–450℃).Besides,a size model of DRX grains is also established and can depict the evolution of DRX grain size for all the investigated compression conditions with accounting for temperature rising at high strain rates(5 s^-1 and 10 s^-1). 展开更多
关键词 Mg-11 Gd-4Y-2Zn-0.4Zr ALLOY MODELING Dynamic recrystallization NON-UNIFORM strain-LPSO kinkING
原文传递
An improved EEHEMT model for kink effect on AlGaN/GaN HEMT 被引量:2
19
作者 曹梦逸 卢阳 +5 位作者 魏家行 陈永和 李卫军 郑佳欣 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期452-456,共5页
In this paper, a new current expression based on both the direct currect (DC) characteristics of the A1GaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by whic... In this paper, a new current expression based on both the direct currect (DC) characteristics of the A1GaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide (Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT (10 × 125 μm)). The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. 展开更多
关键词 A1GaN/GaN HEMT kink effect tanh EEHEMT model
原文传递
SOI/MOSFET Kink效应的模拟和分析
20
作者 王晓晖 汤庭鳌 +2 位作者 郑大卫 黄宜平 C.A.Pazde Araujo 《固体电子学研究与进展》 CAS CSCD 北大核心 1993年第3期228-232,共5页
非全耗尽SOI/MOS晶体管由于存在“Kink效应”而限制了它的应用范围。本文考虑了沟道夹断区的碰撞电离和横向寄生晶体管效应,对浮置衬底SOI/nMOS晶体管的电流—电压特性曲线进行了理论计算,讨论了Kink效应的产生机理。计算结果与实验符... 非全耗尽SOI/MOS晶体管由于存在“Kink效应”而限制了它的应用范围。本文考虑了沟道夹断区的碰撞电离和横向寄生晶体管效应,对浮置衬底SOI/nMOS晶体管的电流—电压特性曲线进行了理论计算,讨论了Kink效应的产生机理。计算结果与实验符合甚好。对器件参数的分析可以定性地指导抑制Kink效应的器件优化设计。 展开更多
关键词 SOI结构 MOS场效应管 kink效应
在线阅读 下载PDF
上一页 1 2 26 下一页 到第
使用帮助 返回顶部