A new SiC asymmetric cell trench metal–oxide–semiconductor field effect transistor(MOSFET)with a split gate(SG)and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode(SGHJD-TMOS)is investigated in this ar...A new SiC asymmetric cell trench metal–oxide–semiconductor field effect transistor(MOSFET)with a split gate(SG)and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode(SGHJD-TMOS)is investigated in this article.The SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gateoxide electric field.The integrated p^(+)-poly Si/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device.Numerical analysis results show that,compared with the conventional asymmetric cell trench MOSFET(CA-TMOS),the high-frequency figure of merit(HF-FOM,R_(on,sp)×Q_(gd,sp))is reduced by 92.5%,and the gate-oxide electric field is reduced by 75%.In addition,the forward conduction voltage drop(V_(F))and gate-drain charge(Q_(gd))are reduced from 2.90 V and 63.5μC/cm^(2) in the CA-TMOS to 1.80 V and 26.1μC/cm^(2) in the SGHJD-TMOS,respectively.Compared with the CA-TMOS,the turn-on loss(E_(on)) and turn-off loss(E_(off)) of the SGHJD-TMOS are reduced by 21.1%and 12.2%,respectively.展开更多
无刷直流电机(brushless DC motor,BLDCM)换相时刻关断相电流的续流造成电机端电压的畸变。当采用无位置传感器反电动势过零检测法时,端电压波形畸变会使位置检测信号相位超前,偏离最佳换相时刻,重载条件下甚至会造成换相失败,制约了反...无刷直流电机(brushless DC motor,BLDCM)换相时刻关断相电流的续流造成电机端电压的畸变。当采用无位置传感器反电动势过零检测法时,端电压波形畸变会使位置检测信号相位超前,偏离最佳换相时刻,重载条件下甚至会造成换相失败,制约了反电动势检测法的电机功率应用范围。因此,该文针对电流续流影响端电压的机理加以分析,建立了电流续流产生相位超前的数学模型,并给出了位置检测信号相位超前的补偿算法。仿真和实验结果表明,经过补偿后的位置检测接近最佳换相时刻,重载条件下仍可正常运行。展开更多
基金Major Science and Technology Projects of Hainan Province,China(Grant Nos.ZDKJ2021023 and ZDKJ2021042)Hainan Provincial Natural Science Foundation of China(Grant Nos.622QN285 and 521QN210)。
文摘A new SiC asymmetric cell trench metal–oxide–semiconductor field effect transistor(MOSFET)with a split gate(SG)and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode(SGHJD-TMOS)is investigated in this article.The SG structure of the SGHJD-TMOS structure can effectively reduce the gate-drain capacitance and reduce the high gateoxide electric field.The integrated p^(+)-poly Si/SiC heterojunction freewheeling diode substantially improves body diode characteristics and reduces switching losses without degrading the static characteristics of the device.Numerical analysis results show that,compared with the conventional asymmetric cell trench MOSFET(CA-TMOS),the high-frequency figure of merit(HF-FOM,R_(on,sp)×Q_(gd,sp))is reduced by 92.5%,and the gate-oxide electric field is reduced by 75%.In addition,the forward conduction voltage drop(V_(F))and gate-drain charge(Q_(gd))are reduced from 2.90 V and 63.5μC/cm^(2) in the CA-TMOS to 1.80 V and 26.1μC/cm^(2) in the SGHJD-TMOS,respectively.Compared with the CA-TMOS,the turn-on loss(E_(on)) and turn-off loss(E_(off)) of the SGHJD-TMOS are reduced by 21.1%and 12.2%,respectively.
文摘无刷直流电机(brushless DC motor,BLDCM)换相时刻关断相电流的续流造成电机端电压的畸变。当采用无位置传感器反电动势过零检测法时,端电压波形畸变会使位置检测信号相位超前,偏离最佳换相时刻,重载条件下甚至会造成换相失败,制约了反电动势检测法的电机功率应用范围。因此,该文针对电流续流影响端电压的机理加以分析,建立了电流续流产生相位超前的数学模型,并给出了位置检测信号相位超前的补偿算法。仿真和实验结果表明,经过补偿后的位置检测接近最佳换相时刻,重载条件下仍可正常运行。
