We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the...We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.展开更多
We present the design of a superconducting flux qubit with a large loop inductance. The large loop inductance is desirable for coupling between qubits. The loop is configured into a gradiometer form that could reduce ...We present the design of a superconducting flux qubit with a large loop inductance. The large loop inductance is desirable for coupling between qubits. The loop is configured into a gradiometer form that could reduce the interference from environmental magnetic noise. A combined Josephson junction, i.e., a DC-SQUID is used to replace the small Josephson junction in the usual 3-JJ （Josephaon junction） flux qubit, leading to a tunable energy gap by using an independent external flux line. We perform numerical calculations to investigate the dependence of the energy gap on qubit parameters such as junction capacitance, critical current, loop inductance, and the ratio of junction energy between small and large junctions in the flux qubit. We suggest a range of values for the parameters.展开更多
We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8+x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a ju...We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8+x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a junction stack successfully, and meantime made the surrounding area insulated. A certain concentration of hydrochloric acid was used to maintain the roughness of the modified layer. The cur-rent-voltage characteristic was achieved through the four terminal measurement. We could control the junctions' number by changing the concentration and the soaking time. We also found that the thick-ness of the stack was equal to the average height of the insulation layer. Such a simple, convenient and controllable fabrication method with a high yield might widen the applications of the intrinsic Joseph-son junctions.展开更多
文摘We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.
基金supported by the National Basic Research Program of China (Grant Nos. 2011CBA00106 and 2009CB929102)the National Natural Science Foundation of China (Grant Nos. 11104340, 11161130519, and 10974243)
文摘We present the design of a superconducting flux qubit with a large loop inductance. The large loop inductance is desirable for coupling between qubits. The loop is configured into a gradiometer form that could reduce the interference from environmental magnetic noise. A combined Josephson junction, i.e., a DC-SQUID is used to replace the small Josephson junction in the usual 3-JJ （Josephaon junction） flux qubit, leading to a tunable energy gap by using an independent external flux line. We perform numerical calculations to investigate the dependence of the energy gap on qubit parameters such as junction capacitance, critical current, loop inductance, and the ratio of junction energy between small and large junctions in the flux qubit. We suggest a range of values for the parameters.
基金the National Natural Science Foundation of China (Grants Nos.10474036, 60571007 and 10390163)the National Basic Research Program of China (Grant No. 2006CB601006)the Specialized Research Fund for the Doc-toral Program of Higher Education of China (Grant No. 2004028033)
文摘We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8+x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a junction stack successfully, and meantime made the surrounding area insulated. A certain concentration of hydrochloric acid was used to maintain the roughness of the modified layer. The cur-rent-voltage characteristic was achieved through the four terminal measurement. We could control the junctions' number by changing the concentration and the soaking time. We also found that the thick-ness of the stack was equal to the average height of the insulation layer. Such a simple, convenient and controllable fabrication method with a high yield might widen the applications of the intrinsic Joseph-son junctions.
