This paper presents a floating resistor employing CIDITA (current inverting differential input transconductance amplifier). The proposed floating resistor is based on CMOS technology of 0.18 μm. For the realization o...This paper presents a floating resistor employing CIDITA (current inverting differential input transconductance amplifier). The proposed floating resistor is based on CMOS technology of 0.18 μm. For the realization of this floating inductor, two CIDITA have been cascaded together, no other passive elements are used, giving advantage of reduced chip area and hence reduced losses. The given circuit topology has an advantage of realizing both positive and negative resistors. This paper presents a simple circuitry of floating resistor in which the value of resistance can be tuned by adjusting the gate voltage of MOSFET. The PSpice simulation result shows constant resistance of 1.6 K<span style="white-space:nowrap;">Ω for frequency bandwidth of 1 Hz to 1 MHz, with supply voltage of ±1.25 volts.展开更多
In this paper, a large dynamic range floating memristor emulator(LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor(VCLR). Since...In this paper, a large dynamic range floating memristor emulator(LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor(VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor(JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained "resistor" presents a hysteretic behavior,which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.展开更多
文摘This paper presents a floating resistor employing CIDITA (current inverting differential input transconductance amplifier). The proposed floating resistor is based on CMOS technology of 0.18 μm. For the realization of this floating inductor, two CIDITA have been cascaded together, no other passive elements are used, giving advantage of reduced chip area and hence reduced losses. The given circuit topology has an advantage of realizing both positive and negative resistors. This paper presents a simple circuitry of floating resistor in which the value of resistance can be tuned by adjusting the gate voltage of MOSFET. The PSpice simulation result shows constant resistance of 1.6 K<span style="white-space:nowrap;">Ω for frequency bandwidth of 1 Hz to 1 MHz, with supply voltage of ±1.25 volts.
基金supported by the National Key Research and Development Program of China(2018YFC0830300)the National Natural Science Foundation of China(61571312)the Science and Technology Support Project of Chengdu PU Chip Science and Technology Co.,Ltd
文摘In this paper, a large dynamic range floating memristor emulator(LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor(VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor(JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained "resistor" presents a hysteretic behavior,which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.
