A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information f...A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (</span><i><span style="font-family:Verdana;">n</span></i><span style="font-family:Verdana;">) and the diode saturation current (</span><i><span style="font-family:Verdana;">I<sub>o</sub></span></i><span style="font-family:Verdana;">). For a quick and fast convergence, we have determined the optimal ideality factor (</span><i><span style="font-family:Verdana;">n<sub>o</sub></span></i><span style="font-family:Verdana;">) and optimal saturation current (</span><i><span style="font-family:Verdana;">I<sub>oopt</sub></span></i><span style="font-family:Verdana;">) as the primary parameters by first assuming the optimal values of </span><i><span style="font-family:Verdana;">R<sub>sh</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">I<sub>ph</sub> </span></i><span style="font-family:Verdana;">at standard test conditions (STC). Further, we evaluated the effects of </span><i><span style="font-family:Verdana;">I<sub>ph</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">on I-V and P-V curves by considering the values of </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">below </span><i><span style="font-family:Verdana;">n</span><sub><span style="font-family:Verdana;">o</span></sub></i><span style="font-family:Verdana;">. We have evaluated different iterative procedures of determining </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">at open-circuit, short-circuit point and the maximum-power points. These procedures have been classified into four approaches that guarantees positive shunt and series resistance for </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">≤</span><i><span style="font-family:Verdana;"> n<sub>o</sub></span></i><span style="font-family:Verdana;">. These approaches have been categorized by deriving the saturation current as a dependent variable at each cardinal point with or without </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">pair. The values obtained for the five parameters have been used to simulate the photovoltaic solar module characteristic curves with great precision at different air temperatures and irradiances, considering the effect of Nominal Operating Cell Temperature (NOCT).展开更多
目的探讨精神分裂症患者认知损害与阳性和阴性症状量表(positive and negative syndrome scale,PANSS) 5因子模型之间的关系。方法选取首发或者复发未治疗住院的精神分裂症患者130名和85名健康对照,采用精神分裂症认知功能成套测验中文...目的探讨精神分裂症患者认知损害与阳性和阴性症状量表(positive and negative syndrome scale,PANSS) 5因子模型之间的关系。方法选取首发或者复发未治疗住院的精神分裂症患者130名和85名健康对照,采用精神分裂症认知功能成套测验中文版(MATRICS consensus cognitive battery,MCCB)评估2组的认知功能,PANSS量表5因子模型评估患者的精神症状。结果患者组在MCCB测量的连线、符号编码、言语流畅、霍普金斯词语学习、空间广度、空间记忆、迷宫及情绪管理分测验评分均低于对照组( P <0.001);患者组在MCCB评估的认知维度与PANSS 5因子模型的关联性分析中,认知损害因子与信息处理加工速度、言语学习、推理及问题解决、社会认知能力均呈负相关( P <0.050),而其他因子与MCCB评估的认知维度均无相关。结论精神分裂症患者认知功能不同程度受损,其中信息处理加工速度受损程度更为严重;精神分裂症患者认知功能与阴性症状是相互独立的症状群,在患者治疗过程中,需要制定不同的方案。展开更多
文摘A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (</span><i><span style="font-family:Verdana;">n</span></i><span style="font-family:Verdana;">) and the diode saturation current (</span><i><span style="font-family:Verdana;">I<sub>o</sub></span></i><span style="font-family:Verdana;">). For a quick and fast convergence, we have determined the optimal ideality factor (</span><i><span style="font-family:Verdana;">n<sub>o</sub></span></i><span style="font-family:Verdana;">) and optimal saturation current (</span><i><span style="font-family:Verdana;">I<sub>oopt</sub></span></i><span style="font-family:Verdana;">) as the primary parameters by first assuming the optimal values of </span><i><span style="font-family:Verdana;">R<sub>sh</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">I<sub>ph</sub> </span></i><span style="font-family:Verdana;">at standard test conditions (STC). Further, we evaluated the effects of </span><i><span style="font-family:Verdana;">I<sub>ph</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">on I-V and P-V curves by considering the values of </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">below </span><i><span style="font-family:Verdana;">n</span><sub><span style="font-family:Verdana;">o</span></sub></i><span style="font-family:Verdana;">. We have evaluated different iterative procedures of determining </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">at open-circuit, short-circuit point and the maximum-power points. These procedures have been classified into four approaches that guarantees positive shunt and series resistance for </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">≤</span><i><span style="font-family:Verdana;"> n<sub>o</sub></span></i><span style="font-family:Verdana;">. These approaches have been categorized by deriving the saturation current as a dependent variable at each cardinal point with or without </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">pair. The values obtained for the five parameters have been used to simulate the photovoltaic solar module characteristic curves with great precision at different air temperatures and irradiances, considering the effect of Nominal Operating Cell Temperature (NOCT).
文摘目的探讨精神分裂症患者认知损害与阳性和阴性症状量表(positive and negative syndrome scale,PANSS) 5因子模型之间的关系。方法选取首发或者复发未治疗住院的精神分裂症患者130名和85名健康对照,采用精神分裂症认知功能成套测验中文版(MATRICS consensus cognitive battery,MCCB)评估2组的认知功能,PANSS量表5因子模型评估患者的精神症状。结果患者组在MCCB测量的连线、符号编码、言语流畅、霍普金斯词语学习、空间广度、空间记忆、迷宫及情绪管理分测验评分均低于对照组( P <0.001);患者组在MCCB评估的认知维度与PANSS 5因子模型的关联性分析中,认知损害因子与信息处理加工速度、言语学习、推理及问题解决、社会认知能力均呈负相关( P <0.050),而其他因子与MCCB评估的认知维度均无相关。结论精神分裂症患者认知功能不同程度受损,其中信息处理加工速度受损程度更为严重;精神分裂症患者认知功能与阴性症状是相互独立的症状群,在患者治疗过程中,需要制定不同的方案。
