As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.Ho...As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.展开更多
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has...Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.展开更多
Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochem...Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.展开更多
The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati...Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.展开更多
The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d...The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.展开更多
The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homoge...Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.展开更多
Recently,for developing neuromorphic visual systems,adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances a...Recently,for developing neuromorphic visual systems,adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible func-tionalities.In this review,based on a description of the biological adaptive functions that are favorable for dynamically perceiv-ing,filtering,and processing information in the varying environment,we summarize the representative strategies for achiev-ing these adaptabilities in optoelectronic transistors,including the adaptation for detecting information,adaptive synaptic weight change,and history-dependent plasticity.Moreover,the key points of the corresponding strategies are comprehen-sively discussed.And the applications of these adaptive optoelectronic transistors,including the adaptive color detection,sig-nal filtering,extending the response range of light intensity,and improve learning efficiency,are also illustrated separately.Lastly,the challenges faced in developing adaptive optoelectronic transistor for artificial vision system are discussed.The descrip-tion of biological adaptive functions and the corresponding inspired neuromorphic devices are expected to provide insights for the design and application of next-generation artificial visual systems.展开更多
In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information secu...In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information security strategies.Leverag-ing the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after read-ing,thereby guaranteeing data security.In this study,a reconfigurable ambipolar optoelectronic synaptic transistor based on poly(3-hexylthiophene)(P3HT)and poly[[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)](N2200)blend film was fabricated through solution-processed method.The resulting transistor exhib-ited a relatively large ON/OFF ratio of 10^(3) in both n-and p-type regions,and tunable photoconductivity after light illumination,particularly with green light.The photo-generated carriers could be effectively trapped under the gate bias,indicating its poten-tial application in mimicking synaptic behaviors.Furthermore,the synaptic plasticity,including volatile/non-volatile and excita-tory/inhibitory characteristics,could be finely modulated by electrical and optical stimuli.These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading.This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems.展开更多
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.展开更多
In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are train...In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are trained and validated using the Transformer model.In the proposed model,the eight-layer transformer encoders are connected in series and the encoder layer of each Transformer consists of the multi-head attention layer and the feed-forward neural network layer.The experimental results show that the measured and modeled S-parameters of the HEMT device match well in the frequency range of 0.5-40 GHz,with the errors versus frequency less than 1%.Compared with other models,good accuracy can be achieved to verify the effectiveness of the proposed model.展开更多
Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor sol...Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.展开更多
The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated...The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed,and their performance exhibited significant improvement compared to single layer IGZO TFTs.In the bilayer heterojunction TFT,the field-effect mobility was promoted to 23.5 cm^(2)·V^(-1)·s^(-1),the switching ratio reached 4.1×10^(7),and the subthreshold swing was reduced to 0.42 V/dec.Moreover,the variation of bilayer TFTs threshold voltage(Vth)was significantly suppressed,Under positive gate bias stress(PBS)and negative gate bias stress(NBS),the threshold shift is reduced to be 1.5 V and-1.1 V,respectively.The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface,which facilitated the accumulation of channel electrons.Additionally,the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering,thereby the performance properties of TFT were enhancing.The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT,which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.展开更多
The Josephson junction is typically tuned by a magnetic field or electrostatic gate to realize a superconducting(SC)transistor,which manipulates the supercurrent in integrated SC circuits.Here,we propose a theoretical...The Josephson junction is typically tuned by a magnetic field or electrostatic gate to realize a superconducting(SC)transistor,which manipulates the supercurrent in integrated SC circuits.Here,we propose a theoretical scheme for a light-controlled SC transistor,which is composed of two superconductor leads weakly linked by a coherent light-driven quantum dot.We discover a Josephson-like relation for the supercurrent I=I(Φ)sinΦsc,where both the supercurrent phaseΦand magnitude Iccan be completely controlled by the phase,intensity,and detuning of the driving light.Additionally,the supercurrent magnitude displays a Fano profile with the increase of the driving light intensity,which is understood by comparing the level splitting of the quantum dot under light driving with the SC gap.Moreover,when two such SC transistors form a loop,they constitute a light-controlled SC quantum interference device(SQUID).Such a light-controlled SQUID can demonstrate the Josephson diode effect,and the optimized non-reciprocal efficiency achieves up to 54%,surpassing the maximum record reported in recent literature.Thus,our scheme delivers a promising platform for performing diverse and flexible manipulations in SC circuits.展开更多
Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was repor...Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was reported.The zinc oxide nanocrystals synthesized through the thermolysis of Zn-oleate complex in organic solvent medium were first deposited on the ATO/ITO/glass substrate and treated by annealing,then the zinc source solution was deposited on the zinc oxide nanoparticle layer to form precursor thin film by spin-coating process.The thin film transistor with well-controlled and densely packed nanocrystals in zinc oxide semiconductor layer was obtained by thermal annealing the system of precursor film coated ATO/ITO/glass substrate.By optimizing the fabrication conditions,the fabricated thin film transistors exhibited superior field-effect property and carrier mobility property,their saturation mobility reached 2.17 cm^(2)·V^(-1)·s^(-1),which was more than twice as high compared to the transistor devices coated only by zinc oxide nanoparticles.Our method of fabricating zinc oxide thin film transistors was simple,high efficiency,and feasible for the batch production with low cost.展开更多
Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a ...Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.展开更多
Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunct...Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.展开更多
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT),South Korea(RS-2024-00421181)financially supported in part by National R&D Program(2021M3H4A3A02086430)through NRF(National Research Foundation of Korea)funded by Ministry of Science and ICT+2 种基金the National Research Council of Science&Technology(NST)grant by the Korea government(MSIT)(No.GTL25021-210)The Inter-University Semiconductor Research Center,Institute of Engineering Research,and Soft Foundry Institute at Seoul National University provided research facilities for this workhe grant by the National Research Foundation of Korea(NSF)supported by the Korea government(MIST)(RS-2025-16903034)。
文摘As silicon-based transistors face fundamental scaling limits,the search for breakthrough alternatives has led to innovations in 3D architectures,heterogeneous integration,and sub-3 nm semiconductor body thicknesses.However,the true effectiveness of these advancements lies in the seamless integration of alternative semiconductors tailored for next-generation transistors.In this review,we highlight key advances that enhance both scalability and switching performance by leveraging emerging semiconductor materials.Among the most promising candidates are 2D van der Waals semiconductors,Mott insulators,and amorphous oxide semiconductors,which offer not only unique electrical properties but also low-power operation and high carrier mobility.Additionally,we explore the synergistic interactions between these novel semiconductors and advanced gate dielectrics,including high-K materials,ferroelectrics,and atomically thin hexagonal boron nitride layers.Beyond introducing these novel material configurations,we address critical challenges such as leakage current and long-term device reliability,which become increasingly crucial as transistors scale down to atomic dimensions.Through concrete examples showcasing the potential of these materials in transistors,we provide key insights into overcoming fundamental obstacles—such as device reliability,scaling down limitations,and extended applications in artificial intelligence—ultimately paving the way for the development of future transistor technologies.
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金supported by the Natural Science Foundation of Guangdong Province,China (No.2025A1515011654)the National Natural Science Foundation of China (No.22090053)+3 种基金the Fundamental Research Funds for National Universities,China University of Geosciences (Wuhan)support from the program of China Scholarships Council (No.202406410155)Young Elite Scientists Sponsorship Program by CAST-Doctoral Student Special Plansupport from the S&T Special Program of Huzhou (No.2024GZ07)。
文摘Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.
基金financially supported by the National Natural Science Foundation of China(Nos.52272214,52372082,52466013,52373184,and U24A20660)Jiangxi Provincial Natural Science Foundation(Nos.20242BAB26059,20232BAB204032,20252BAC200290,20252BEJ730349,and 20252BAC240326)Doctoral Start-Up Fund of Jiangxi Science&Technology Normal University(No.2024BSQD16)。
文摘Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金supported by the National Key R&D Plan of China(Grant No.2023YFB3210400)the National Natural Science Foundation of China(No.62174101)+2 种基金the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)the Fundamental Research Funds of Shandong University(2020QNQT001)Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,the Natural Science Foundation of Qingdao-Original exploration project(No.24-4-4-zrjj-139-jch).
文摘Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.
基金supported by the National Key Research and Development Program of China(2021YFA1101303)the National Natural Science Foundation of China(62374115)the Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096).
文摘The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed.
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
基金supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001).
文摘Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
基金the National Key Research and Development Program of China(2021YFA0717900)National Natural Science Foundation of China(62471251,62405144,62288102,22275098,and 62174089)+1 种基金Basic Research Program of Jiangsu(BK20240033,BK20243057)Jiangsu Funding Program for Excellent Postdoctoral Talent(2022ZB402).
文摘Recently,for developing neuromorphic visual systems,adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve optoelectronic transistors with high performances and flexible func-tionalities.In this review,based on a description of the biological adaptive functions that are favorable for dynamically perceiv-ing,filtering,and processing information in the varying environment,we summarize the representative strategies for achiev-ing these adaptabilities in optoelectronic transistors,including the adaptation for detecting information,adaptive synaptic weight change,and history-dependent plasticity.Moreover,the key points of the corresponding strategies are comprehen-sively discussed.And the applications of these adaptive optoelectronic transistors,including the adaptive color detection,sig-nal filtering,extending the response range of light intensity,and improve learning efficiency,are also illustrated separately.Lastly,the challenges faced in developing adaptive optoelectronic transistor for artificial vision system are discussed.The descrip-tion of biological adaptive functions and the corresponding inspired neuromorphic devices are expected to provide insights for the design and application of next-generation artificial visual systems.
基金the National Natural-Science Foundation of China(Grant No.62304137)Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515012479,2024A1515011737,and 2024A1515010006)+4 种基金the Science and Technology Innovation Commission of Shenzhen(Grant No.JCYJ20220818100206013)RSC Researcher Collaborations Grant(Grant No.C23-2422436283)State Key Laboratory of Radio Frequency Heterogeneous Integration(Independent Scientific Research Program No.2024010)the Project on Frontier and Interdisciplinary Research Assessment,Academic Divisions of the Chinese Academy of Sciences(Grant No.XK2023XXA002)NTUT-SZU Joint Research Program.
文摘In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information security strategies.Leverag-ing the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after read-ing,thereby guaranteeing data security.In this study,a reconfigurable ambipolar optoelectronic synaptic transistor based on poly(3-hexylthiophene)(P3HT)and poly[[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)](N2200)blend film was fabricated through solution-processed method.The resulting transistor exhib-ited a relatively large ON/OFF ratio of 10^(3) in both n-and p-type regions,and tunable photoconductivity after light illumination,particularly with green light.The photo-generated carriers could be effectively trapped under the gate bias,indicating its poten-tial application in mimicking synaptic behaviors.Furthermore,the synaptic plasticity,including volatile/non-volatile and excita-tory/inhibitory characteristics,could be finely modulated by electrical and optical stimuli.These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading.This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems.
基金financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254)Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002)+1 种基金the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
文摘Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
基金Supported by the National Natural Science Foundation of China(62201293,62034003)the Open-Foundation of State Key Laboratory of Millimeter-Waves(K202313)the Jiangsu Province Youth Science and Technology Talent Support Project(JSTJ-2024-040)。
文摘In this paper,the small-signal modeling of the Indium Phosphide High Electron Mobility Transistor(InP HEMT)based on the Transformer neural network model is investigated.The AC S-parameters of the HEMT device are trained and validated using the Transformer model.In the proposed model,the eight-layer transformer encoders are connected in series and the encoder layer of each Transformer consists of the multi-head attention layer and the feed-forward neural network layer.The experimental results show that the measured and modeled S-parameters of the HEMT device match well in the frequency range of 0.5-40 GHz,with the errors versus frequency less than 1%.Compared with other models,good accuracy can be achieved to verify the effectiveness of the proposed model.
基金supported by the National Key Research and Development program of China (Nos. 2024YFA1410700 and 2021YFA1200700)the National Natural Science Foundation of China (Nos. T2222025, 62174053, 62474065 and 52372120)+3 种基金the Natural Science Foundation of Chongqing (CSTB2024NSCQ-JQX0005)the Shanghai Science and Technology Innovation Action Plan (Nos. 24QA2702300 and 24YF2710400)the National Postdoctoral Program (GZB20240225)the Fundamental Research Funds for the Central Universities。
文摘Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors.
基金supported by the National Natural Science Foundation of China(Grant Nos.U22A2073 and 62474197)the Basic and Applied Basic Research Foundation of Guangdong Province,China(Grant Nos.2024A1515011536 and 2025A04J7142)。
文摘The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed,and their performance exhibited significant improvement compared to single layer IGZO TFTs.In the bilayer heterojunction TFT,the field-effect mobility was promoted to 23.5 cm^(2)·V^(-1)·s^(-1),the switching ratio reached 4.1×10^(7),and the subthreshold swing was reduced to 0.42 V/dec.Moreover,the variation of bilayer TFTs threshold voltage(Vth)was significantly suppressed,Under positive gate bias stress(PBS)and negative gate bias stress(NBS),the threshold shift is reduced to be 1.5 V and-1.1 V,respectively.The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface,which facilitated the accumulation of channel electrons.Additionally,the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering,thereby the performance properties of TFT were enhancing.The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT,which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.
基金supported by NSF of China(Grant Nos.12088101 and 11905007)NSAF(Grants Nos.U1930403 and U1930402)。
文摘The Josephson junction is typically tuned by a magnetic field or electrostatic gate to realize a superconducting(SC)transistor,which manipulates the supercurrent in integrated SC circuits.Here,we propose a theoretical scheme for a light-controlled SC transistor,which is composed of two superconductor leads weakly linked by a coherent light-driven quantum dot.We discover a Josephson-like relation for the supercurrent I=I(Φ)sinΦsc,where both the supercurrent phaseΦand magnitude Iccan be completely controlled by the phase,intensity,and detuning of the driving light.Additionally,the supercurrent magnitude displays a Fano profile with the increase of the driving light intensity,which is understood by comparing the level splitting of the quantum dot under light driving with the SC gap.Moreover,when two such SC transistors form a loop,they constitute a light-controlled SC quantum interference device(SQUID).Such a light-controlled SQUID can demonstrate the Josephson diode effect,and the optimized non-reciprocal efficiency achieves up to 54%,surpassing the maximum record reported in recent literature.Thus,our scheme delivers a promising platform for performing diverse and flexible manipulations in SC circuits.
文摘Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was reported.The zinc oxide nanocrystals synthesized through the thermolysis of Zn-oleate complex in organic solvent medium were first deposited on the ATO/ITO/glass substrate and treated by annealing,then the zinc source solution was deposited on the zinc oxide nanoparticle layer to form precursor thin film by spin-coating process.The thin film transistor with well-controlled and densely packed nanocrystals in zinc oxide semiconductor layer was obtained by thermal annealing the system of precursor film coated ATO/ITO/glass substrate.By optimizing the fabrication conditions,the fabricated thin film transistors exhibited superior field-effect property and carrier mobility property,their saturation mobility reached 2.17 cm^(2)·V^(-1)·s^(-1),which was more than twice as high compared to the transistor devices coated only by zinc oxide nanoparticles.Our method of fabricating zinc oxide thin film transistors was simple,high efficiency,and feasible for the batch production with low cost.
基金financially supported by the National Natural Science Foundation of China(Nos.62074166,62104256,62304254,and U23A20322)the Key Research and Development Plan of Hunan Province under Grant(No.2022WK2001).
文摘Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.
基金supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China(Grant No.U21A2071).
文摘Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.
