Pentacene organic field-effect transistors （OFETs） based on single- or double-layer biocompatible dielectrics of poly（methyl methacrylate） （PMMA） and/or silk fibroin （SF） are fabricated. Compared with those de...Pentacene organic field-effect transistors （OFETs） based on single- or double-layer biocompatible dielectrics of poly（methyl methacrylate） （PMMA） and/or silk fibroin （SF） are fabricated. Compared with those devices based on sin- gle PMMA or SF dielectric or SF/PMMA bilayer dielectric, the OFETs with biocompatible PMMA/SF bilayer dielectric exhibit optimal performance with a high field-effect mobility of 0.21 cm2/Vs and a current on/off ratio of 1.5 × 104. By investigating the surface morphology of the pentacene active layer through atom force microscopy and analyzing the elec- trical properties, the performance enhancement is mainly attributed to the crystallization improvement of the pentacene and the smaller interface trap density at the dielectric/organic interface. Meanwhile, a low contact resistance also indicates that a good electrode/organic contact is formed, thereby assisting the performance improvement of the OFET.展开更多
Organic field-effect transistors(OFETs)refer to field-effect transistors that use organic semiconductors as channel materials.Owing to the advantages of organic materials such as solution processability and intrinsic ...Organic field-effect transistors(OFETs)refer to field-effect transistors that use organic semiconductors as channel materials.Owing to the advantages of organic materials such as solution processability and intrinsic flexibility,OFETs are expected to be applicable in emergent technologies including wearable electronics and sensors,flexible displays,internet-of-things,neuromorphic computing,etc.Improving the electrical performance and developing multifunctionalities of OFETs are two major and closely relevant aspects for OFETs-related research.The former one aims for investigating the device physics and expanding the horizons of OFETs,while the later one is critical for leading OFETs into practical and emergent applications.The development in each of the two aspects would undoubtfully promote the other and bring more confidence for future development of OFETs.Hence,this review is divided into two parts that respectively summarize the recent progress in high-performance OFETs and multifunctional OFETs.展开更多
Monolayer molybdenum disulfide(Mo S2)is considered to be a promising candidate for field-effect transistors and photodetectors due to its direct bandgap and atomically thin properties.However,the Mo S2devices are impe...Monolayer molybdenum disulfide(Mo S2)is considered to be a promising candidate for field-effect transistors and photodetectors due to its direct bandgap and atomically thin properties.However,the Mo S2devices are impeded by the intrinsic surface defects and environmental adsorption such as H2O and O2.Here,we demonstrated a highly ordered,ultrathin(<5 nm)and scalable N,N0-ditridecylperylene-3,4,9,10-tetracarboxylic diimide(PTCDI-C13)passivation layer that can be epitaxially grown on Mo S2.The van der Waals interface between PTCDI-C13 and Mo S2can efficiently reduce the surface traps and isolate Mo S2from ambient.As a result,the passivated devices exhibit huge improvement in both carrier mobility(from 0.5 to 8.3 cm^2/(V s))and sub-threshold swing(from 16.7 to 1.6 V/dec).Also,the photodetector made on Mo S2after passivation has a much faster response speed(from 3 s to 10 ms)without significant sacrifice of the responsivity.Our method provides a facile approach to realize high-performance two-dimensional electronic and optoelectronic devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61177032)the Foundation for Innovation Groups of the National Natural Science Foundation of China(Grant No.61021061)+1 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2010Z004)the Scientific Research Staring Foundation for the Returned Overseas Chinese Scholars of the Education Ministry of China(Grant No.GGRYJJ08-05)
文摘Pentacene organic field-effect transistors （OFETs） based on single- or double-layer biocompatible dielectrics of poly（methyl methacrylate） （PMMA） and/or silk fibroin （SF） are fabricated. Compared with those devices based on sin- gle PMMA or SF dielectric or SF/PMMA bilayer dielectric, the OFETs with biocompatible PMMA/SF bilayer dielectric exhibit optimal performance with a high field-effect mobility of 0.21 cm2/Vs and a current on/off ratio of 1.5 × 104. By investigating the surface morphology of the pentacene active layer through atom force microscopy and analyzing the elec- trical properties, the performance enhancement is mainly attributed to the crystallization improvement of the pentacene and the smaller interface trap density at the dielectric/organic interface. Meanwhile, a low contact resistance also indicates that a good electrode/organic contact is formed, thereby assisting the performance improvement of the OFET.
基金supported by the National Key Research and Development Program of China(Nos.2019YFE0116700 and 2019YFA0705900)Ministry of Science and Technology,National Natural Science Foundation of China(Nos.62075224,22021002,51873182 and 52103231)+3 种基金Zhejiang Province Science and Technology Plan(No.2021C04012)Zhejiang Provincial Department of Science and Technologysupported by the Lu Jiaxi International Teams Project(No.GJTD-2020–02)the Fundamental Research Funds for the Central Universities(No.2021QNA4033)。
文摘Organic field-effect transistors(OFETs)refer to field-effect transistors that use organic semiconductors as channel materials.Owing to the advantages of organic materials such as solution processability and intrinsic flexibility,OFETs are expected to be applicable in emergent technologies including wearable electronics and sensors,flexible displays,internet-of-things,neuromorphic computing,etc.Improving the electrical performance and developing multifunctionalities of OFETs are two major and closely relevant aspects for OFETs-related research.The former one aims for investigating the device physics and expanding the horizons of OFETs,while the later one is critical for leading OFETs into practical and emergent applications.The development in each of the two aspects would undoubtfully promote the other and bring more confidence for future development of OFETs.Hence,this review is divided into two parts that respectively summarize the recent progress in high-performance OFETs and multifunctional OFETs.
基金supported by Research Grants Council of Hong Kong SAR (Ao E/P-03/08, Ao E/P-02/12, 14204616, N_CUHK438/18)CUHK Group Research Scheme+1 种基金CUHK Impact Postdoctoral FellowshipInnovation and Technology Commission, Hong Kong SAR Government (ITS/390/18)
文摘Monolayer molybdenum disulfide(Mo S2)is considered to be a promising candidate for field-effect transistors and photodetectors due to its direct bandgap and atomically thin properties.However,the Mo S2devices are impeded by the intrinsic surface defects and environmental adsorption such as H2O and O2.Here,we demonstrated a highly ordered,ultrathin(<5 nm)and scalable N,N0-ditridecylperylene-3,4,9,10-tetracarboxylic diimide(PTCDI-C13)passivation layer that can be epitaxially grown on Mo S2.The van der Waals interface between PTCDI-C13 and Mo S2can efficiently reduce the surface traps and isolate Mo S2from ambient.As a result,the passivated devices exhibit huge improvement in both carrier mobility(from 0.5 to 8.3 cm^2/(V s))and sub-threshold swing(from 16.7 to 1.6 V/dec).Also,the photodetector made on Mo S2after passivation has a much faster response speed(from 3 s to 10 ms)without significant sacrifice of the responsivity.Our method provides a facile approach to realize high-performance two-dimensional electronic and optoelectronic devices.
