The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cuttin...The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.展开更多
Ferroelectric materials have many interesting physical properties such as ferroelectricity,pyroelectricity,piezoelectricity,and opto-electricity,and applying ferroelectric materials in the forms of thin and thick film...Ferroelectric materials have many interesting physical properties such as ferroelectricity,pyroelectricity,piezoelectricity,and opto-electricity,and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging.In this paper,we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications.Pyroelectric thin film infrared sensors have been made,characterized,and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane.Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure,and its turn-on voltage of about 4.5V at~1000 ppm in air is about 7 times of the best value reported in the literature.For the application of electron emission flat panel display,ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips,the threshold voltage of those ferroelectric film coated tips has been reduced about one order from~70 V/μm to 4~10 V/μm for different Ti concentrations,and however,the electron emission current density has been increased at least 3~4 order for those coated tips compared to that of the bare Si tips.To fulfill in the thickness gap between thin film of typical~1μm made by PVD/CVD and polished ceramic wafer of~50μm from the bulk,piezoelectric films with thickness in a range of 1~30μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique,and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to~120 dB.More detailed results will be presented and mechanisms will be discussed.展开更多
Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of co...Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale.As a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)miniaturization.Recently,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of miniaturization.Soon,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were demon-strated.However,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still lacking.Here,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are reviewed.Furthermore,the correlations among the structures,the properties,and the device performance are analyzed.Finally,several crucial problems or challenges and possible research directions are put forward.We hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.展开更多
In recent years,the emergence of numerous applications of artificial intelligence(AI)has sparked a new technological revolution.These applications include facial recognition,autonomous driving,intelligent robotics,and...In recent years,the emergence of numerous applications of artificial intelligence(AI)has sparked a new technological revolution.These applications include facial recognition,autonomous driving,intelligent robotics,and image restoration.However,the data processing and storage procedures in the conventional von Neumann architecture are discrete,which leads to the“memory wall”problem.As a result,such architecture is incompatible with AI requirements for efficient and sustainable processing.Exploring new computing architectures and material bases is therefore imperative.Inspired by neurobiological systems,in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture.The basis of neural morphological computation is a crossbar array of high-density,high-efficiency non-volatile memory devices.Among the numerous candidate memory devices,ferroelectric memory devices with non-volatile polarization states,low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing.Further research on the complementary metal-oxide-semiconductor(CMOS)compatibility for these devices is underway and has yielded favorable results.Herein,we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks.Subsequently,we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing.Finally,we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.展开更多
基金funded by the National Key Research and Development Program,grant umber 2022YFE0124200the National Natural Science Foundation of China,grant number:U2241221.
文摘The identification of ferroelectricity in oxides such as hafnium oxide,which are compatible with the contemporary semiconductor fabrication techniques,has contributed to a resurgence of ferroelectric devices in cutting-edge microelectronics.In a transistor structure,ferroelectric devices play the role of connecting a ferroelectric material to a semiconductor,which combines memory and logic operations at the level of a single device,thus meeting some of the most essential hardware requirements for new paradigms for artificial intelligence(A.I)chips.In this review,we addressed the issues associated with high-volume fabrication at advanced technology nodes(≤10 nm) at the material and device level.Moreover,we also reviewed the advancement of A.I chips such as neuro-inspired computer chips.For neuro-inspired A.I chips based on nonvolatile memory,four important metrics are suggested for benchmarking:computing density,energy efficiency,learning capability,and computing accuracy.It is inferred that ferroelectric devices can be a major hardware element in the design of future A.I chips,which will leads to an innovative approach to electronics that is termed ferroelectronics.
文摘Ferroelectric materials have many interesting physical properties such as ferroelectricity,pyroelectricity,piezoelectricity,and opto-electricity,and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging.In this paper,we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications.Pyroelectric thin film infrared sensors have been made,characterized,and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane.Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure,and its turn-on voltage of about 4.5V at~1000 ppm in air is about 7 times of the best value reported in the literature.For the application of electron emission flat panel display,ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips,the threshold voltage of those ferroelectric film coated tips has been reduced about one order from~70 V/μm to 4~10 V/μm for different Ti concentrations,and however,the electron emission current density has been increased at least 3~4 order for those coated tips compared to that of the bare Si tips.To fulfill in the thickness gap between thin film of typical~1μm made by PVD/CVD and polished ceramic wafer of~50μm from the bulk,piezoelectric films with thickness in a range of 1~30μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique,and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to~120 dB.More detailed results will be presented and mechanisms will be discussed.
基金China Postdoctoral Science Foundation,Grant/Award Number:2019M661200National Natural Science Foundation of China,Grant/Award Numbers:11874171,11904118,61922035Fundamental Research Funds for the Central Universities。
文摘Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high endurance.However,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale.As a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)miniaturization.Recently,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of miniaturization.Soon,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were demon-strated.However,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still lacking.Here,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are reviewed.Furthermore,the correlations among the structures,the properties,and the device performance are analyzed.Finally,several crucial problems or challenges and possible research directions are put forward.We hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.
基金supported by National Key Research and Development Program of China(2021YFA1200700)The National Natural Science Foundation of China(T2222025 and 62174053)+2 种基金Open Research Projects of Zhejiang Lab(2021MD0AB03)Shanghai Science and Technology Innovation Action Plan(21JC1402000 and 21520714100)the Fundamental Research Funds for the Central Universities。
文摘In recent years,the emergence of numerous applications of artificial intelligence(AI)has sparked a new technological revolution.These applications include facial recognition,autonomous driving,intelligent robotics,and image restoration.However,the data processing and storage procedures in the conventional von Neumann architecture are discrete,which leads to the“memory wall”problem.As a result,such architecture is incompatible with AI requirements for efficient and sustainable processing.Exploring new computing architectures and material bases is therefore imperative.Inspired by neurobiological systems,in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture.The basis of neural morphological computation is a crossbar array of high-density,high-efficiency non-volatile memory devices.Among the numerous candidate memory devices,ferroelectric memory devices with non-volatile polarization states,low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing.Further research on the complementary metal-oxide-semiconductor(CMOS)compatibility for these devices is underway and has yielded favorable results.Herein,we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks.Subsequently,we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing.Finally,we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.
