Different than covalently bonded magnetic multilayer systems,high-quality interfaces without dangling bonds in van der Waals(vd W)junctions of two-dimensional(2D)layered magnetic materials offer opportunities to reali...Different than covalently bonded magnetic multilayer systems,high-quality interfaces without dangling bonds in van der Waals(vd W)junctions of two-dimensional(2D)layered magnetic materials offer opportunities to realize novel functionalities.Here,we report the fabrication of multi-state vertical spin valves without spacer layers by using vd W homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers.We demonstrate the typical behavior of two-state and threestate magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes,respectively.Distinct from traditional spin valves with sandwich structures,our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices.Our work demonstrates the possibility of extend multi-state,non-volatile spin information to 2 D magnetic homo-junctions,and it emphasizes the utility of vd W interface as a fundamental building block for spintronic devices.展开更多
基金supported by the National Key R&D Program of China (2017YFA0303400 and 2017YFB0405700)the National Natural Science foundation of China (61774144)+2 种基金Beijing Natural Science Foundation Key Program (Z190007)the Project from Chinese Academy of Sciences (QYZDY-SSW-JSC020, XDPB12, and XDB28000000)K C Wong Education Foundation。
文摘Different than covalently bonded magnetic multilayer systems,high-quality interfaces without dangling bonds in van der Waals(vd W)junctions of two-dimensional(2D)layered magnetic materials offer opportunities to realize novel functionalities.Here,we report the fabrication of multi-state vertical spin valves without spacer layers by using vd W homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers.We demonstrate the typical behavior of two-state and threestate magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes,respectively.Distinct from traditional spin valves with sandwich structures,our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices.Our work demonstrates the possibility of extend multi-state,non-volatile spin information to 2 D magnetic homo-junctions,and it emphasizes the utility of vd W interface as a fundamental building block for spintronic devices.
