Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to ...Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.展开更多
We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC（0001） substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are ...We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC（0001） substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS2 monolayer is solely in the 2H structure, while the TaS2 monolayer contains both 1T and 2H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 20050284003.
文摘Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.
文摘We report the growth and characterization of atomically thick NbS2, TaS2, and FeS films on a 6H-SiC（0001） substrate terminated with monolayer or bilayer epitaxial graphene. The crystal and electronic structures are studied by scanning tunneling microscopy and reflection high-energy electron diffraction. The NbS2 monolayer is solely in the 2H structure, while the TaS2 monolayer contains both 1T and 2H structures. Charge-density waves are observed in all phases. For the FeS films, the tetragonal structure coexists with the hexagonal one and no superconductivity is observed.
