β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光...β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.展开更多
High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 ...High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).展开更多
As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislo...As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.展开更多
In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep leve...In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.展开更多
The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 rema...The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa（2） than those of ZnGa（1） are due to more empty energy states of ZnGa（2） than those of ZnGa（1） near Ef in the near infrared region.展开更多
The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most sta...The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.展开更多
文摘β-Ga_(2)O_(3)以其较高的导带底(Conduction Band Minimum,CBM)和较低的价带顶(Valence Band Maximum,VBM),赋予其光生电子和空穴较强的还原与氧化能力,但其宽禁带和高载流子复合率限制了在光催化中的应用.金属离子掺杂被认为是提升光催化性能的有效途径.本文基于第一性原理系统研究了Sr、Ba、V、Nb、Ta等二十种元素掺杂对β-Ga_(2)O_(3)光催化性能的影响,研究发现:Sr、Nb、Ta、Mn、Fe、Zn、Hg七种元素掺杂β-Ga_(2)O_(3)后,材料除能保持合适的带边位置外,还具有更高的电子空穴分离效率以及更低的形成能,表明这些元素的引入可有效提升β-Ga_(2)O_(3)光催化效率;Nb、Ta掺杂可显著增强材料在红外光区的吸收,Mn、Fe掺杂则显著提升材料在紫外和可见光区的吸收能力,其中,Nb在0.5 eV处光吸收系数高达1.38×10^(5)cm^(−1),Mn、Fe掺杂在3 eV处光吸收系数可达1×10^(5)cm^(−1),在不同波段均呈现出良好的光吸收能力.此外,Hg掺杂表现出跨红外至深紫外的宽波段增强效果,Hg掺杂后,电子空穴相对有效质量高达109,说明Hg掺杂显著提升载流子分离能力,同时由于其在宽波段显著增强的光吸收效果,因此,Hg可作为β-Ga_(2)O_(3)在光催化制氢中理想的金属掺杂元素,以上研究结果为β-Ga_(2)O_(3)光催化分解水制氢研究提供了价值参考.
基金the Scientific and Innovative Action Plan of Shanghai,China(Grant No.18511110502)Equipment Pre-research Fund Key Project,China(Grant No.6140922010601).
文摘High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).
基金the Financial support from the National key Research and Development Program of China(Nso.2018YFB0406502,2016YFB1102201)the National Natural Science Foundation of China(Grant No.51321091)+2 种基金the key Research and Development Program of Shandong Province(No.2018CXGC0410)the Young Scholars Program of Shandong University(No.2015WLJH36)the 111 Project 2.0(No.BP2018013)
文摘As a wide-bandgap semiconductor(WBG), β-Ga_2O_3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β-Ga_2O_3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There's no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the(102) plane, the(101) being the possible slip plane. The voids defects like hollow nanopipes, PNPs, NSGs and line-shaped grooves may be caused by the condensation of excess oxygen vacancies, penetration of tiny bubbles or local meltback. The nucleation of twin lamellae occurred at the initial stage of "shoulder part" during the crystal growth. These results are helpful in controlling the occurrence of crystal defects and improving the device performance.
基金an outcome of the collaborative R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics&Information Technology,Govt.of India,being implemented by Digital India Corporation。
文摘In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.
基金Project supported by the National Natural Science Foundation of China(Grant No.10974077)the Natural Science Foundation of Shandong Province,China(Grant No.2009ZRB01702)the Shandong Provincial Higher Educational Science and Technology Program,China(Grant No.J10LA08)
文摘The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa（2） than those of ZnGa（1） are due to more empty energy states of ZnGa（2） than those of ZnGa（1） near Ef in the near infrared region.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10974077)the Natural Science Foundation of Shandong Province,China (Grant No. 2009ZRB01702)the Shandong Provincial Higher Educational Science and Technology Program,China (Grant No. J10LA08)
文摘The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.
