Thin-film bulk acoustic resonators(FBARs)operating with essentially thickness-extensional mode have been widely used in communication fields.In this paper,we provide a convenient means for analyzing FBARs with sandwic...Thin-film bulk acoustic resonators(FBARs)operating with essentially thickness-extensional mode have been widely used in communication fields.In this paper,we provide a convenient means for analyzing FBARs with sandwich-layered structure by appropriately neglecting the high-order terms from 3D elasticity equations.First,for straight-crested waves,an approximate method is proposed,which can accurately describe the dispersion relation near the operating frequency range of an FBAR.Using the approximation,the optimum lateral size of a 2D model of frame-like FBAR is obtained,and the results are in good agreement with that obtained by commercial FEM software COMSOL.The approximation is further extended to variablecrested waves in order to analyze the 3D plate models for real devices.The mode shapes of 3D FBARs with and without frame-like structures are obtained.The results show that the approximation presented in this paper is of sufficient accuracy and can be used as an efficient tool for the analysis and design of FBARs.展开更多
随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基...随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基于薄膜体声波谐振器(Thin Film Bulk Acoustic Resonator,FBAR)技术的FBAR滤波器已成为最有前景的滤波器之一。另外,当前空腔型FBAR滤波器已取得了一定的商业成功,但是仍面临性能不足、工艺复杂、成本略高、技术受限等困境。为此,本文试图从器件理论研究与结构优化、高性能压电材料制备与优化、新型工艺开发及技术融合三方面对FBAR滤波器的相关问题与关键技术进行综述,旨在为该研究领域的学者梳理FBAR滤波器技术进阶与迭代的脉络,以期为未来研究的路径与方向提供若干启发性思考。展开更多
介绍了一种单端口,端口阻抗为50Ω的S波段宽带薄膜体声波谐振器（FBAR）滤波器,该滤波器采用网格型结构的FBAR滤波器芯片级联巴伦芯片实现。对宽带FBAR滤波器芯片的设计过程、工艺实现过程进行了说明。采用0.35μm Ga As工艺实现了3~8 ...介绍了一种单端口,端口阻抗为50Ω的S波段宽带薄膜体声波谐振器（FBAR）滤波器,该滤波器采用网格型结构的FBAR滤波器芯片级联巴伦芯片实现。对宽带FBAR滤波器芯片的设计过程、工艺实现过程进行了说明。采用0.35μm Ga As工艺实现了3~8 GHz频率范围的巴伦芯片,在FBAR滤波器芯片的中心频率处,幅度不平衡度为0.53 d B,相位不平衡度为0.55°。制备的FBAR滤波器通带频率范围为3 100~3 400 MHz,1 d B带宽约为369 MHz,在2 660 MHz和3 840 MHz处带外抑制分别为45.6 d Bc和41.3 d Bc,尺寸仅为12 mm×7 mm×2.9 mm。将实测结果与仿真结果进行了对比,两者一致性很好。展开更多
基金supported by the National Natural Science Foundation of China(12061131013,11972276,12172171 and 12102183)the State Key Laboratory of Mechanics and Control of Mechanical Structures at NUAA(No.MCMS-E-0520K02)+5 种基金the Fundamental Research Funds for the Central Universities(NE2020002 and NS2019007)National Natural Science Foundation of China for Creative Research Groups(No.51921003)the Start-up Fund supported by NUAA,National Natural Science Foundation of Jiangsu Province(BK20211176)Local Science and Technology Development Fund Projects Guided by the Central Government(2021Szvup061)Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan(Shuangchuang Doctor Program,JSSCBS20210166)a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD).
文摘Thin-film bulk acoustic resonators(FBARs)operating with essentially thickness-extensional mode have been widely used in communication fields.In this paper,we provide a convenient means for analyzing FBARs with sandwich-layered structure by appropriately neglecting the high-order terms from 3D elasticity equations.First,for straight-crested waves,an approximate method is proposed,which can accurately describe the dispersion relation near the operating frequency range of an FBAR.Using the approximation,the optimum lateral size of a 2D model of frame-like FBAR is obtained,and the results are in good agreement with that obtained by commercial FEM software COMSOL.The approximation is further extended to variablecrested waves in order to analyze the 3D plate models for real devices.The mode shapes of 3D FBARs with and without frame-like structures are obtained.The results show that the approximation presented in this paper is of sufficient accuracy and can be used as an efficient tool for the analysis and design of FBARs.
文摘随着通信技术升级以及5G通信应用的驱动,各种智能设备所需的滤波器数量激增,促进了滤波器市场的繁荣,但对其性能要求也越来越高,例如大带宽、高频率、高功率容量、微型化、集成化以及低成本等指标是学术界与产业界重点关注的方向,而基于薄膜体声波谐振器(Thin Film Bulk Acoustic Resonator,FBAR)技术的FBAR滤波器已成为最有前景的滤波器之一。另外,当前空腔型FBAR滤波器已取得了一定的商业成功,但是仍面临性能不足、工艺复杂、成本略高、技术受限等困境。为此,本文试图从器件理论研究与结构优化、高性能压电材料制备与优化、新型工艺开发及技术融合三方面对FBAR滤波器的相关问题与关键技术进行综述,旨在为该研究领域的学者梳理FBAR滤波器技术进阶与迭代的脉络,以期为未来研究的路径与方向提供若干启发性思考。
文摘介绍了一种单端口,端口阻抗为50Ω的S波段宽带薄膜体声波谐振器（FBAR）滤波器,该滤波器采用网格型结构的FBAR滤波器芯片级联巴伦芯片实现。对宽带FBAR滤波器芯片的设计过程、工艺实现过程进行了说明。采用0.35μm Ga As工艺实现了3~8 GHz频率范围的巴伦芯片,在FBAR滤波器芯片的中心频率处,幅度不平衡度为0.53 d B,相位不平衡度为0.55°。制备的FBAR滤波器通带频率范围为3 100~3 400 MHz,1 d B带宽约为369 MHz,在2 660 MHz和3 840 MHz处带外抑制分别为45.6 d Bc和41.3 d Bc,尺寸仅为12 mm×7 mm×2.9 mm。将实测结果与仿真结果进行了对比,两者一致性很好。
