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Enhanced circularly polarized luminescence emission promoted by achiral dichroic oligomers of F8BT in cholesteric liquid crystal
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作者 Yang Li Yihan Chen +3 位作者 Jiaxin Luo Qihuan Li Yiwu Quan Yixiang Cheng 《Chinese Chemical Letters》 SCIE CAS CSCD 2024年第11期470-474,共5页
In the exploration of circularly polarized luminescence(CPL)materials,doping cholesteric liquid crystals(CLCs)with achiral dyes is a common strategy.Conjugated polymers are favored as achiral dyes for their superior l... In the exploration of circularly polarized luminescence(CPL)materials,doping cholesteric liquid crystals(CLCs)with achiral dyes is a common strategy.Conjugated polymers are favored as achiral dyes for their superior luminescent properties.In this study,a series of oligomers(M1-M3)and the conjugated polymer F8BT were synthesized to systematically assess the impact of the length of the conjugated backbone on CPL signals of CLCs doped with conjugated polymers.As the length rose from M1 to M3,CPL intensity concurrently increased(|g_(lum)|increased from 0.35 to 0.84),attributable to enhanced dichroism(order parameter,SFincreased from 0.20 to 0.56).In contrast,F8BT polymer resulted in diminished CPL intensity(|g_(lum)|=0.64)due to the reduced compatibility.Achieving a balance between dichroism and compatibility is crucial for optimizing CPL in conjugated polymer-doped CLCs.The guiding principle established here may have broad applicability in other CPL assemblies,offering a strategic avenue to engineer highperformance CPL materials with conjugated polymer. 展开更多
关键词 Circularly polarized luminescence Cholesteric liquid crystal f8bt DICHROISM Compatibility
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F8BT薄膜表面形貌及与Al形成界面的电子结构和反应
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作者 潘宵 鞠焕鑫 +4 位作者 冯雪飞 范其瑭 王嘉兴 杨耀文 朱俊发 《物理学报》 SCIE EI CAS CSCD 北大核心 2015年第7期37-46,共10页
基于共轭聚合物光电器件的性能与聚合物的表面形貌、分子取向、以及与金属电极形成的界面结构密切相关.本文利用原子力显微镜(AFM)、同步辐射光电子能谱(SRPES)和近边X射线吸收精细结构谱(NEXAFS)等,研究了聚(9,9-二辛基芴并苯噻二唑)(F... 基于共轭聚合物光电器件的性能与聚合物的表面形貌、分子取向、以及与金属电极形成的界面结构密切相关.本文利用原子力显微镜(AFM)、同步辐射光电子能谱(SRPES)和近边X射线吸收精细结构谱(NEXAFS)等,研究了聚(9,9-二辛基芴并苯噻二唑)(F8BT)薄膜的表面形貌、分子取向及其与Al电极形成界面过程的结构变化.结果表明,在略低于F8BT玻璃转变温度(Tg=130℃)条件下对F8BT薄膜进行退火,可明显增加薄膜的表面粗糙度,薄膜中F8BT的分子取向角约为49,9,9-二辛基芴单元(F8)与苯噻唑单元(BT)几乎在同一平面.在Al/F8BT界面形成过程中,Al与F8BT中的C,N和S均发生不同程度的化学反应,并导致价带结构和未占据分子轨道(LUMO)态密度的变化.Al对F8BT进行n型掺杂引起F8BT能带弯曲的同时,未占据能级被部分占据,更多的电子将被注入到LUMO+1中.通过考察价带电子结构、芯能级位移及二次截止边的变化,绘制了清晰的Al/F8BT界面能级图. 展开更多
关键词 f8bt 表面形貌 同步辐射光电子能谱 近边X射线吸收精细结构谱
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