The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides the localized ...The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.展开更多
The reflection Talbot effect under the illumination of Gaussian spherical wave and plane wave is observed on 1D and 2D photonic crystal of silicon prepared by nanosecond laser. It is found that the distance between tw...The reflection Talbot effect under the illumination of Gaussian spherical wave and plane wave is observed on 1D and 2D photonic crystal of silicon prepared by nanosecond laser. It is found that the distance between two adjacent Talbot images increases lineally with increasing of image distance as well as amplification of Talbot images under the illumination of Gaussian spherical wave. The result of theory is coincident with that of experiment, which shows that selecting suitable wavefront shape of input field can enlarge the amplification rate and improve the resolution of Talbot imaging. The reflection Talbot effect will have a lot of good application in microscopy of micro-fabrication on silicon, such as detecting period structures of plasma on line of PLD fabricating.展开更多
基金Support from the National Natural Science Foundation of China (Grant No.60966002,11264007)the National Key Laboratory of Surface Physics in Fudan University
文摘The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectra on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided in curved surface effect.
基金Support from the National Natural Science Foundation of China ( Grant No. 11264007 )from the National Key Laboratory of Surface Physics in Fudan University
文摘The reflection Talbot effect under the illumination of Gaussian spherical wave and plane wave is observed on 1D and 2D photonic crystal of silicon prepared by nanosecond laser. It is found that the distance between two adjacent Talbot images increases lineally with increasing of image distance as well as amplification of Talbot images under the illumination of Gaussian spherical wave. The result of theory is coincident with that of experiment, which shows that selecting suitable wavefront shape of input field can enlarge the amplification rate and improve the resolution of Talbot imaging. The reflection Talbot effect will have a lot of good application in microscopy of micro-fabrication on silicon, such as detecting period structures of plasma on line of PLD fabricating.
