The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution an...The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.展开更多
Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and ...Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and unstable,making high-quality single-crystal growth,characterization,and measurements difficult,and most do not exhibit superconductivity at ambient pressure.In contrast,La_(3) In stands out for its ambient-pressure superconductivity(T_(C)∼9.4 K)and the availability of high-quality single crystals.Here,we investigate its low-energy electronic structure using angle-resolved photoemission spectroscopy and first-principles calculations.The bands near the Fermi energy(E_(F))are mainly derived from La 5d and In 5p orbitals.A saddle point is directly observed at the Brillouin zone(BZ)boundary,while a three-dimensional Van Hove singularity crosses E_(F) at the BZ corner.First-principles calculations further reveal topological Dirac surface states within the bulk energy gap above E_(F).The coexistence of a high density of states and in-gap topological surface states near𝐸F suggests that La3In offers a promising platform for tuning superconductivity and exploring possible topological superconducting phases through doping or external pressure.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140)Tianshan Innovation Team Program(Grant No.2022TSYCTD0005)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032)。
文摘The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.
基金supported by the National Natural Science Foundation of China(Grant Nos.12222413,12174443,12274459,and 12404266)the National Key R&D Program of China(Grant Nos.2023YFA1406500,2022YFA1403800,and 2022YFA1403103)+3 种基金the Natural Science Foundation of Shanghai (Grant No.23ZR1482200)the Natural Science Foundation of Ningbo (Grant No.2024J019)the Science Research Project of Hebei Education Department (Grant No.BJ2025060)the funding of Ningbo Yongjiang Talent Program。
文摘Superconducting elect rides have attracted growing attention for their potential to achieve high superconducting transition temperatures(T_(C))under pressure.However,many known elect rides are chemically reactive and unstable,making high-quality single-crystal growth,characterization,and measurements difficult,and most do not exhibit superconductivity at ambient pressure.In contrast,La_(3) In stands out for its ambient-pressure superconductivity(T_(C)∼9.4 K)and the availability of high-quality single crystals.Here,we investigate its low-energy electronic structure using angle-resolved photoemission spectroscopy and first-principles calculations.The bands near the Fermi energy(E_(F))are mainly derived from La 5d and In 5p orbitals.A saddle point is directly observed at the Brillouin zone(BZ)boundary,while a three-dimensional Van Hove singularity crosses E_(F) at the BZ corner.First-principles calculations further reveal topological Dirac surface states within the bulk energy gap above E_(F).The coexistence of a high density of states and in-gap topological surface states near𝐸F suggests that La3In offers a promising platform for tuning superconductivity and exploring possible topological superconducting phases through doping or external pressure.
