The exponential-doping GaN nanowire arrays(GaN NWAs)photocathode has a"light-trapping effect",and the built-in electric field can promote the concentration of the photogene rated carrier center to the top su...The exponential-doping GaN nanowire arrays(GaN NWAs)photocathode has a"light-trapping effect",and the built-in electric field can promote the concentration of the photogene rated carrier center to the top surface of the nanowire.However,in the preparation ofactual NWAs photocathodes,the problem that photons emitted from the sides of the nanowires cannot be effectively collected has been encountered.Our proposed field-assisted exponential-doping GaN NWAs can bend the motion trajectory of the emitted electrons toward the collecting side.In this study,the quantum efficiency(QE)and collection efficiency(CE)of the external field-assisted exponential-doping GaN NWAs photocathode are derived based on the two-dimensional carrier diffusion equation and the initial energy and angular distribution,respectively.For a field-assisted exponential-doping GaN NWAs with a width d=200 nm and a height H=400 nm,the optimal structural parameters are obtained:the incident angleθ=50°and the nanowire spacing is L=335.6 nm.On this basis,the field intensity of 0.5 V/μm can maximize the CE of the NWAs.All the results show that the field-assisted approach does contribute to the collection of emitted electrons,which can provide theoretical guidance for high-performance electron sources based on exponential-doping GaN NWAs photocathodes.And field-assisted exponential-doping GaN NWAs cathode is expected to be verified by the experimental results in the future.展开更多
Based on the purpose of solving the"secondary absorption"of adjacent nanowires and the lateral emission in the Ga N nanowire arrays(NWAs)cathode,an exponential-doping and graded Al compositional Ga N NWAs ph...Based on the purpose of solving the"secondary absorption"of adjacent nanowires and the lateral emission in the Ga N nanowire arrays(NWAs)cathode,an exponential-doping and graded Al compositional Ga N NWAs photocathode is proposed,which could generate internal electric field to increase the quantum efficiency(QE)of top surface,and the introduction of an external electric field promote the side-emission electrons to shift toward the collecting side.The QE and collection efficiency(CE)of exponential-doping and graded compositional Ga N NWAs under different array structure parameters,incident angles and external electric field intensities are analyzed.The results show that although the collection ratio of emitted electrons in the exponential-doping Ga N NWAs is higher,the graded Al compositional photocathode with a stronger built-in electric field can obtain better CE under the application of an external electric field,and the peak value can reach 33.2%in a specific structure.External electric field has a more significant effect on the CE of uniform-doping Ga N NWAs.The solutions provided in this study can make the Ga N NWAs photocathode more suitable for the strict requirements of vacuum electron sources.展开更多
基金This work was supported financially by the Qing Lan Project of Jiangsu Province,China(No.2017-AD41779)the Fundamental Research Funds for the Central Universities-China(No.30916011206)the Six Talent Peaks Project in Jiangsu Province,China(No.2015-XCL-008).
文摘The exponential-doping GaN nanowire arrays(GaN NWAs)photocathode has a"light-trapping effect",and the built-in electric field can promote the concentration of the photogene rated carrier center to the top surface of the nanowire.However,in the preparation ofactual NWAs photocathodes,the problem that photons emitted from the sides of the nanowires cannot be effectively collected has been encountered.Our proposed field-assisted exponential-doping GaN NWAs can bend the motion trajectory of the emitted electrons toward the collecting side.In this study,the quantum efficiency(QE)and collection efficiency(CE)of the external field-assisted exponential-doping GaN NWAs photocathode are derived based on the two-dimensional carrier diffusion equation and the initial energy and angular distribution,respectively.For a field-assisted exponential-doping GaN NWAs with a width d=200 nm and a height H=400 nm,the optimal structural parameters are obtained:the incident angleθ=50°and the nanowire spacing is L=335.6 nm.On this basis,the field intensity of 0.5 V/μm can maximize the CE of the NWAs.All the results show that the field-assisted approach does contribute to the collection of emitted electrons,which can provide theoretical guidance for high-performance electron sources based on exponential-doping GaN NWAs photocathodes.And field-assisted exponential-doping GaN NWAs cathode is expected to be verified by the experimental results in the future.
基金supported by Qing Lan Project of Jiangsu Province-China(Grant No.2017-AD41779)the Fundamental Research Funds for the Central Universities-China(Grant No.30916011206)the Six Talent Peaks Project in Jiangsu ProvinceChina(Grant No.2015-XCL-008)。
文摘Based on the purpose of solving the"secondary absorption"of adjacent nanowires and the lateral emission in the Ga N nanowire arrays(NWAs)cathode,an exponential-doping and graded Al compositional Ga N NWAs photocathode is proposed,which could generate internal electric field to increase the quantum efficiency(QE)of top surface,and the introduction of an external electric field promote the side-emission electrons to shift toward the collecting side.The QE and collection efficiency(CE)of exponential-doping and graded compositional Ga N NWAs under different array structure parameters,incident angles and external electric field intensities are analyzed.The results show that although the collection ratio of emitted electrons in the exponential-doping Ga N NWAs is higher,the graded Al compositional photocathode with a stronger built-in electric field can obtain better CE under the application of an external electric field,and the peak value can reach 33.2%in a specific structure.External electric field has a more significant effect on the CE of uniform-doping Ga N NWAs.The solutions provided in this study can make the Ga N NWAs photocathode more suitable for the strict requirements of vacuum electron sources.
