The optical and physical properties of an InGaN light-emitting diode （LED） with a specific design of a staggered AlGaN electron-blocking layer （EBL） are investigated numerically in detail. The electrostatic field ...The optical and physical properties of an InGaN light-emitting diode （LED） with a specific design of a staggered AlGaN electron-blocking layer （EBL） are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence （EL） intensity, internal quantum efficiency （IQE）, and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.展开更多
The advantages of nitride-based dual-wavelength light-emitting diodes （LEDs） with an InA1N electron blocking layer （EBL） are studied. The emission spectra, carrier concentration in the quantum wells （QWs）, energ...The advantages of nitride-based dual-wavelength light-emitting diodes （LEDs） with an InA1N electron blocking layer （EBL） are studied. The emission spectra, carrier concentration in the quantum wells （QWs）, energy band and internal quantum efficiency （IQE） are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.展开更多
The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energ...The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer（EBL） has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.展开更多
Solid electrolyte Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP)has attracted significant attention due to its high ionic conductivity,good air stability,and low cost.However,the practical application of LATP is limited b...Solid electrolyte Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP)has attracted significant attention due to its high ionic conductivity,good air stability,and low cost.However,the practical application of LATP is limited by its instability with Li metal,poor interfacial contact,and sluggish ion transport.Herein,a multifunctional layer composed of LiN_(x)O_(y)and LiGa is designed via an in situ conversion reaction between Li metal and Ga(NO_(3))_(3).LiN_(x)O_(y)(LiNO_(3)phase)with low interface energy and high affinity can improve interfacial contact,while LiN_(x)O_(y)(Li_(3)N phase)can provide rapid Li^(+)transport with its low migration barrier.The insulating LiN_(x)O_(y)prevents side reactions,and the conductive LiGa alloy homogenizes electric fields,enabling uniform Li deposition.Therefore,the preference layer ensures stable and tight contact at the interface throughout the cycle.The initial interfacial resistance of the symmetric battery is reduced from1677.2 to 152.2 X cm^(-2),and the critical current density is increased to 1.6 mA cm^(-2).Long-term stable cycling at 0.1 mA cm^(-2)/0.1 m A h cm^(-2)for 3000 h and 0.2 mA cm^(-2)/0.2 mA h cm^(-2)for 2500 h can be achieved.Full cells with LiFePO_(4)retain 89.3% capacity after 300 cycles at 0.5C,while Li_(1.2)Mn_(0.6)Ni_(0.2)O_(2)-based cells also exhibit high capacity and cycling stability.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61176043)the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005)the Project of Combination of Production and Research Guided by Ministry of Education, China (Grant No. 2010B090400192)
文摘The optical and physical properties of an InGaN light-emitting diode （LED） with a specific design of a staggered AlGaN electron-blocking layer （EBL） are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence （EL） intensity, internal quantum efficiency （IQE）, and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.
基金supported by the Project of Combination of Production and Research Guided by Ministry in 2009,China (Grant No. 2009B090300338)the Doctorate Foundation of the State Education Ministry of China (Grant No. 350163)the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong,China (Grant No. 2007A010501008)
文摘The advantages of nitride-based dual-wavelength light-emitting diodes （LEDs） with an InA1N electron blocking layer （EBL） are studied. The emission spectra, carrier concentration in the quantum wells （QWs）, energy band and internal quantum efficiency （IQE） are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.
基金Project supported by the National Natural Science Foundation of China(Grant No.61176043)the Fund for Strategic and Emerging Industries of Guangdong Province,China(Grant No.2010A081002005)the Project of Combination of Production and Research of the Education Ministry and Guangdong Province,China(Grant No.2010B090400192)
文摘The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer（EBL） has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.
基金the support from the National Key R&D Program of China(2022YFB3807700)National Natural Science Foundation of China(22179071)+3 种基金the Hubei Natural Science Foundation for Distinguished Young Scholars(2023AFA089)the Hubei Natural Science Foundation,Hubei(2024AFB993)the Hubei Natural Science Foundation Innovation Group Project(2022CFA020)the Joint Funds of the Hubei Natural Science Foundation Innovation and Development(2022CFD034)。
文摘Solid electrolyte Li_(1.3)Al_(0.3)Ti_(1.7)(PO_(4))_(3)(LATP)has attracted significant attention due to its high ionic conductivity,good air stability,and low cost.However,the practical application of LATP is limited by its instability with Li metal,poor interfacial contact,and sluggish ion transport.Herein,a multifunctional layer composed of LiN_(x)O_(y)and LiGa is designed via an in situ conversion reaction between Li metal and Ga(NO_(3))_(3).LiN_(x)O_(y)(LiNO_(3)phase)with low interface energy and high affinity can improve interfacial contact,while LiN_(x)O_(y)(Li_(3)N phase)can provide rapid Li^(+)transport with its low migration barrier.The insulating LiN_(x)O_(y)prevents side reactions,and the conductive LiGa alloy homogenizes electric fields,enabling uniform Li deposition.Therefore,the preference layer ensures stable and tight contact at the interface throughout the cycle.The initial interfacial resistance of the symmetric battery is reduced from1677.2 to 152.2 X cm^(-2),and the critical current density is increased to 1.6 mA cm^(-2).Long-term stable cycling at 0.1 mA cm^(-2)/0.1 m A h cm^(-2)for 3000 h and 0.2 mA cm^(-2)/0.2 mA h cm^(-2)for 2500 h can be achieved.Full cells with LiFePO_(4)retain 89.3% capacity after 300 cycles at 0.5C,while Li_(1.2)Mn_(0.6)Ni_(0.2)O_(2)-based cells also exhibit high capacity and cycling stability.
