A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The ...A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymm...A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function...A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function with different load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinction ratio of over 7dB with a 95012 load resistor and a 7mW control light power at 622Mbit/s.展开更多
Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well in...Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.展开更多
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when...A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.展开更多
We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP s...We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.展开更多
Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fa...Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fall time.Results show that short transmission distance without EDFA after EAM can be used in future metropolitan area network,but the transmissivity must be carefully considered. The sampling time range and decision level can be optimized to reduce the bit error ratio.展开更多
All-optical wavelength conversion has been demonstrated with an electroabsorption modulator based on cross-absorption modulation. For the first time, simultaneous broadcasting up to 6 different wavelengths at 10Gb/s i...All-optical wavelength conversion has been demonstrated with an electroabsorption modulator based on cross-absorption modulation. For the first time, simultaneous broadcasting up to 6 different wavelengths at 10Gb/s is obtained with less than 0.5-dB polarization dependence.展开更多
Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs mat...Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.展开更多
A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optica...A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.展开更多
A high-quality low-timing-jitter 20-GHz optical pulse train is generated by using two cascaded sinusoidally driven electroabsorption modulators （EAMs） at very low bias voltage of -0.8 V in conjunction with atunable ...A high-quality low-timing-jitter 20-GHz optical pulse train is generated by using two cascaded sinusoidally driven electroabsorption modulators （EAMs） at very low bias voltage of -0.8 V in conjunction with atunable distributed feedback （DFB） semiconductor laser. An approximate transform-limited optical pulse, with the pulse width less than 7 ps, the spectral width of 0.3 nm, and the side-mode suppression ratio （SMSR） above 20 dB, is obtained by tuning the optical delay line.展开更多
A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep ...A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.展开更多
This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells ...This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.展开更多
Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electri...Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electric field (EA spectra) has been observed, which shows the similar shape of the second derivative of the optical absorption spectra. The change in the absorption Δ α is obtained from the EA spectrum, and Δ n is calculated through Kramers_Krong transformation. The optical properties of substituted polyphenylacetylenes (PPAs) were discussed.展开更多
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a sin...We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.展开更多
A stable 10 GHz ultrashort pulse generator consisted of an electroabsorption modulator （EAM） and a welldesigned fibre-based pulse compressor is proposed and demonstrated experimentally. The obtained short pulse has ...A stable 10 GHz ultrashort pulse generator consisted of an electroabsorption modulator （EAM） and a welldesigned fibre-based pulse compressor is proposed and demonstrated experimentally. The obtained short pulse has high extinction ratio, no pedestal, low timing jitter, and FWHM of only 2.4ps. The excellent performance of multiplexing from 10 GHz to 160 GHz confirms the potential of the generator for applications in 160 Gbit/s optical time-division-multiplexing （OTDM） systems.展开更多
We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quant...We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quantum well including the effects of the interaction between electrons and confined LO phonons by using a modified Lee-Low-Pines variational method. The electron wavefunction in the triangular well is chosen as the Airy function. The numerical results are given and discussed.展开更多
We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretic...We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.展开更多
Amplification and phase regeneration can be realized using a phase-sensitive amplifier （PSA）. The phase regeneration of differential phase-shift keying （DPSK） signals based on PSA is analyzed theoretically. We rea...Amplification and phase regeneration can be realized using a phase-sensitive amplifier （PSA）. The phase regeneration of differential phase-shift keying （DPSK） signals based on PSA is analyzed theoretically. We realize the phase regeneration of differential quadrature phase-shift keying （DQPSK） signals based on a structure using two balanced PSAs. Simulations show that nearly ideal phase regeneration can be achieved for the DPSK/DQPSK signals.展开更多
文摘A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘A compact and stable three-port optical gate has been successfully fabricated by monolithically integrating a simple photodiode and an electroabsorption modulator. The gate shows an excellent DC logic ＂and＂ function with different load resistors. Its dynamical characteristics without packaging have also been measured. We observed a dynamic extinction ratio of over 7dB with a 95012 load resistor and a 7mW control light power at 622Mbit/s.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60736036,60706009,60777021 and 60702006)the National Basic Research Program of China (Grant Nos. 2006CB604901 and 2006CB604902)the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z419,2007AA03Z417 and 2009AA03Z442)
文摘Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been mono-lithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.
基金Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203the National Basic Research Program of China under Grant No 2011CB301702the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601
文摘A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
基金supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256,2007AA03Z419 and 2007AA03Z417)the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901and 2006CB604902)the National Natural Science Foundation of China (Grant Nos. 90401025,60736036,60706009 and 60777021)
文摘We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.
文摘Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fall time.Results show that short transmission distance without EDFA after EAM can be used in future metropolitan area network,but the transmissivity must be carefully considered. The sampling time range and decision level can be optimized to reduce the bit error ratio.
文摘All-optical wavelength conversion has been demonstrated with an electroabsorption modulator based on cross-absorption modulation. For the first time, simultaneous broadcasting up to 6 different wavelengths at 10Gb/s is obtained with less than 0.5-dB polarization dependence.
文摘Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.
文摘A comprehensive analysis of multi-quantum-well electroabsorption modulators buried with semi-insulating (SI)-InP is presented. We quantitatively demonstrate that suppression of Zn diffusion into the burying and optical core layers plays a key role in high-speed and high-extinction operation.
基金This work was supported by Hundreds of Talents Plan of CAS.
文摘A high-quality low-timing-jitter 20-GHz optical pulse train is generated by using two cascaded sinusoidally driven electroabsorption modulators （EAMs） at very low bias voltage of -0.8 V in conjunction with atunable distributed feedback （DFB） semiconductor laser. An approximate transform-limited optical pulse, with the pulse width less than 7 ps, the spectral width of 0.3 nm, and the side-mode suppression ratio （SMSR） above 20 dB, is obtained by tuning the optical delay line.
基金Project supported by the National High Technology Research and Development Program of China (No.2006AA01Z256)the State Key Development Program for Basic Research of China (Nos.2006CB604901,2006CB604902)the National Natural Science Foundationof China (No.90401025)
文摘A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.
文摘This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.
文摘Electroabsorption (EA) measurements on thin films of poly[ o (trimethylsilyl) phenylacetylene] and poly[ o (trimethylsilylmethyl) phenylacetylene] have been performed. The spectral change induced by an exernal electric field (EA spectra) has been observed, which shows the similar shape of the second derivative of the optical absorption spectra. The change in the absorption Δ α is obtained from the EA spectrum, and Δ n is calculated through Kramers_Krong transformation. The optical properties of substituted polyphenylacetylenes (PPAs) were discussed.
文摘We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.
基金Support by the National Natural Science Foundation of China under Grant No 60577033, and the Specialized Research Fund for the Doctoral Program of Higher Education （SRFDP） under Grant No 20050003010.
文摘A stable 10 GHz ultrashort pulse generator consisted of an electroabsorption modulator （EAM） and a welldesigned fibre-based pulse compressor is proposed and demonstrated experimentally. The obtained short pulse has high extinction ratio, no pedestal, low timing jitter, and FWHM of only 2.4ps. The excellent performance of multiplexing from 10 GHz to 160 GHz confirms the potential of the generator for applications in 160 Gbit/s optical time-division-multiplexing （OTDM） systems.
基金Supported by the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20040126003, and the Natural Science Foundation of Inner Mongol of China under Grant No 200408020101.
文摘We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quantum well including the effects of the interaction between electrons and confined LO phonons by using a modified Lee-Low-Pines variational method. The electron wavefunction in the triangular well is chosen as the Airy function. The numerical results are given and discussed.
文摘We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.
基金supported by the Beijing Education Committee Common Build Foundation (No.XK100130637)the National "863" Program of China(No.2009AA01Z224)
文摘Amplification and phase regeneration can be realized using a phase-sensitive amplifier （PSA）. The phase regeneration of differential phase-shift keying （DPSK） signals based on PSA is analyzed theoretically. We realize the phase regeneration of differential quadrature phase-shift keying （DQPSK） signals based on a structure using two balanced PSAs. Simulations show that nearly ideal phase regeneration can be achieved for the DPSK/DQPSK signals.
