In this work, we present an experimental transient 3-Dimensionnal study for the minority charge carriers’ effective lifetime measurement under magnetic field in transient dynamic state. The magnitude of the magnetic ...In this work, we present an experimental transient 3-Dimensionnal study for the minority charge carriers’ effective lifetime measurement under magnetic field in transient dynamic state. The magnitude of the magnetic field B is varied from 0 mT to 0.03 mT. The method used is mainly based on the open circuit voltage decay method. The solar cell is injected by a low electrical excitation which protects against capacitance effects. Our approach is based on the open circuit voltage decay response analysis. From an experimental set-up, we get the transient voltage data on a digital scope. The data are used for plotting transient voltage decay curves. The curves obtained and analyzed are fitted in their linear zone. This zone presents an ideal decay which permits to get good values of lifetime. The slope of the linear decay is inversely proportional to effective lifetime. The results of fitting permit determinate the effective charge carriers’ lifetime directly. The results obtained are then presented and analyzed. The observations indicate that the charge carriers effective lifetime decrease when the magnetic field increases.展开更多
The magnetic aftereffect (MAE) and the positron lifetime were measured at room temperature on the Fe_73.5Cu_1 Nb_3Si_13.5 B_9 alloy in as-cast and after annealing at temperature T_a in the range from 450 to 750℃ It w...The magnetic aftereffect (MAE) and the positron lifetime were measured at room temperature on the Fe_73.5Cu_1 Nb_3Si_13.5 B_9 alloy in as-cast and after annealing at temperature T_a in the range from 450 to 750℃ It was found that both the MAE and the positron lifetime decrease with increasing T_a when T_≤600℃. While Ta≥650℃, MAE is essentially suppressed, and two positron lifetimes appear.展开更多
The H_(2)was excited to the H_(2)X^(1)S_(g)^(+)(v=1,J=7)energy level by the stimulated Raman pumping(SRP)technique,and the process of energy redistribution between H_(2)(1,7)molecule and LiH was studied.The particle p...The H_(2)was excited to the H_(2)X^(1)S_(g)^(+)(v=1,J=7)energy level by the stimulated Raman pumping(SRP)technique,and the process of energy redistribution between H_(2)(1,7)molecule and LiH was studied.The particle population density of H_(2)(1,7)energy level is obtained by the coherent anti-Stokes Raman scattering(CARS)technique.The particle population density of each rotational level of H_(2)(v=1,J=7,5,3)is analyzed with temperature after the collision between H_(2)(1,7)molecule and LiH.It is found that the particle population density of each level increases with the increase in temperature after the collision.The time-resolved CARS spectra of each rotational energy level of H_(2)(v=1,J=7,5,3)are analyzed at different temperatures.It is found that a multi-quantum relaxation process with DJ=4 occurs in H_(2)(1,7)molecule,and the temperature accelerates the relaxation process.The effective lifetime of H_(2)(1,7)energy level is obtained by plotting the semi-logarithmic plots of the CARS signal intensity and delay time of the level,and observing the law of the effective lifetime change with the temperature.It is found that the effective lifetime of H_(2)(1,7)energy level shows an obvious decreasing trend with the increase of temperature.展开更多
The tunneling conductance of two kinds of tunnel junctions with time-reversal symmetry breaking,normal metal/insulator/ferromagnetic metal/dx_(2-y2)+is-wave superconductor(NM/I/FM/dx_(2-y2)+is-wave SC)and NM/I/FM/dx_(...The tunneling conductance of two kinds of tunnel junctions with time-reversal symmetry breaking,normal metal/insulator/ferromagnetic metal/dx_(2-y2)+is-wave superconductor(NM/I/FM/dx_(2-y2)+is-wave SC)and NM/I/FM/dx_(2-y2)+idxy-wave SC,is calculated using the extended Blonder-Tinkham-Klapwijk theoretical method.The ratio of the subdominant s-wave and dxy-wave components to the dominant dx_(2-y2)-wave component is expressed byΔ_(s)/Δ_(D)andΔ_(d)/Δ_(D),respectively.Results show that for NM/I/FM/dx_(2-y2)+is-wave SC tunnel junctions,the splitting of the zero-bias conductance peak(ZBCP)is obtained and the splitting peaks appear at eV/Δ_(0)=±Δ_(s)/Δ_(D)with eV the applied bias voltage andΔ_(0)the zero temperature energy gap of SC.For NM/I/FM/dx_(2-y2)+idxy-wave SC tunnel junctions,there are also conductance peaks at eV/Δ_(0)=±Δ_(d)/Δ_(D)but the ZBCP does not split.For the two types of tunnel junctions,the completely reversed tunnel conductance spectrum indicates that when the exchange energy in FM is increased to a certain value,the proximity effect transforms the tunnel junctions from the'0 state'to the'πstate'.The shortening of the transport quasiparticle lifetime can weaken the proximity effect to smooth out the dips and peaks in the tunnel spectrum.This is considered a possible reason that the ZBCP splitting was not observed in some previous experiments.It is expected that these analysis results can serve as a guide for future experiments and the relevant conclusions can be confirmed.展开更多
A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from...A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.展开更多
Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-b...Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.展开更多
The damage on the atomic bonding and electronic state in a SiO_x（1.4-2.3 nm）/c-Si（150 μm） interface has been investigated.This occurred in the process of depositing indium tin oxide（ITO） film onto the silicon s...The damage on the atomic bonding and electronic state in a SiO_x（1.4-2.3 nm）/c-Si（150 μm） interface has been investigated.This occurred in the process of depositing indium tin oxide（ITO） film onto the silicon substrate by magnetron sputtering.We observe that this damage is caused by energetic particles produced in the plasma（atoms,ions,and UV light）.The passivation quality and the variation on interface states of the SiO_x/c-Si system were mainly studied by using effective minority carrier lifetime（τ_（eff）） measurement as a potential evaluation.The results showed that the samples＇ τ_（eff）was reduced by more than 90%after ITO formation,declined from 107 μs to 5 μs.Following vacuum annealing at 200 ℃,the τ_（eff） can be restored to 30 μs.The components of Si to O bonding states at the SiO_x/c-Si interface were analyzed by x-ray photoelectron spectroscopy（XPS） coupled with depth profiling.The amorphous phase of the SiO_x layer and the ＂atomistic interleaving structure＂ at the SiO_x/c-Si interface was observed by a transmission electron microscope（TEM）.The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds（or interface states） and effective minority carrier lifetime.After an appropriate annealing,the reduction of the Si dangling bonds between SiO_x and near the c-Si surface is helpful to improve the passivation effect.展开更多
A new two-step phosphorous diffusion gettering（TSPDG） process using a sacrificial porous silicon layer（PSL） is proposed.Due to a decrease in high temperature time,the TSPDG（PSL） process weakens the deterioration...A new two-step phosphorous diffusion gettering（TSPDG） process using a sacrificial porous silicon layer（PSL） is proposed.Due to a decrease in high temperature time,the TSPDG（PSL） process weakens the deterioration in performances of PSL,and increases the capability of impurity clusters to dissolve and diffuse to the gettering regions.By means of the TSPDG（PSL） process under conditions of 900℃/60 min ＋ 700℃/30 min,the effective lifetime of minority carriers in solar-grade（SOG） Si is increased to 14.3 times its original value,and the short-circuit current density of solar cells is improved from 23.5 o 28.7 mA/cm2,and the open-circuit voltage from 0.534 to 0.596 V along with the transform efficiency from 8.1%to 11.8%,which are much superior to the results achieved by the PDG（PSL） process at 900℃for 90 min.展开更多
文摘In this work, we present an experimental transient 3-Dimensionnal study for the minority charge carriers’ effective lifetime measurement under magnetic field in transient dynamic state. The magnitude of the magnetic field B is varied from 0 mT to 0.03 mT. The method used is mainly based on the open circuit voltage decay method. The solar cell is injected by a low electrical excitation which protects against capacitance effects. Our approach is based on the open circuit voltage decay response analysis. From an experimental set-up, we get the transient voltage data on a digital scope. The data are used for plotting transient voltage decay curves. The curves obtained and analyzed are fitted in their linear zone. This zone presents an ideal decay which permits to get good values of lifetime. The slope of the linear decay is inversely proportional to effective lifetime. The results of fitting permit determinate the effective charge carriers’ lifetime directly. The results obtained are then presented and analyzed. The observations indicate that the charge carriers effective lifetime decrease when the magnetic field increases.
文摘The magnetic aftereffect (MAE) and the positron lifetime were measured at room temperature on the Fe_73.5Cu_1 Nb_3Si_13.5 B_9 alloy in as-cast and after annealing at temperature T_a in the range from 450 to 750℃ It was found that both the MAE and the positron lifetime decrease with increasing T_a when T_≤600℃. While Ta≥650℃, MAE is essentially suppressed, and two positron lifetimes appear.
基金supported by the Natural Science Foundation of Xinjiang Uygur Autonomous Region(Grant No.2023D01C06)the National Natural Science Founda-tion of China(Grant No.12164047).
文摘The H_(2)was excited to the H_(2)X^(1)S_(g)^(+)(v=1,J=7)energy level by the stimulated Raman pumping(SRP)technique,and the process of energy redistribution between H_(2)(1,7)molecule and LiH was studied.The particle population density of H_(2)(1,7)energy level is obtained by the coherent anti-Stokes Raman scattering(CARS)technique.The particle population density of each rotational level of H_(2)(v=1,J=7,5,3)is analyzed with temperature after the collision between H_(2)(1,7)molecule and LiH.It is found that the particle population density of each level increases with the increase in temperature after the collision.The time-resolved CARS spectra of each rotational energy level of H_(2)(v=1,J=7,5,3)are analyzed at different temperatures.It is found that a multi-quantum relaxation process with DJ=4 occurs in H_(2)(1,7)molecule,and the temperature accelerates the relaxation process.The effective lifetime of H_(2)(1,7)energy level is obtained by plotting the semi-logarithmic plots of the CARS signal intensity and delay time of the level,and observing the law of the effective lifetime change with the temperature.It is found that the effective lifetime of H_(2)(1,7)energy level shows an obvious decreasing trend with the increase of temperature.
基金supported by the Fundamental Research Funds for the Central Universities(Grant Nos.23CX03016A and 24CX030009A)。
文摘The tunneling conductance of two kinds of tunnel junctions with time-reversal symmetry breaking,normal metal/insulator/ferromagnetic metal/dx_(2-y2)+is-wave superconductor(NM/I/FM/dx_(2-y2)+is-wave SC)and NM/I/FM/dx_(2-y2)+idxy-wave SC,is calculated using the extended Blonder-Tinkham-Klapwijk theoretical method.The ratio of the subdominant s-wave and dxy-wave components to the dominant dx_(2-y2)-wave component is expressed byΔ_(s)/Δ_(D)andΔ_(d)/Δ_(D),respectively.Results show that for NM/I/FM/dx_(2-y2)+is-wave SC tunnel junctions,the splitting of the zero-bias conductance peak(ZBCP)is obtained and the splitting peaks appear at eV/Δ_(0)=±Δ_(s)/Δ_(D)with eV the applied bias voltage andΔ_(0)the zero temperature energy gap of SC.For NM/I/FM/dx_(2-y2)+idxy-wave SC tunnel junctions,there are also conductance peaks at eV/Δ_(0)=±Δ_(d)/Δ_(D)but the ZBCP does not split.For the two types of tunnel junctions,the completely reversed tunnel conductance spectrum indicates that when the exchange energy in FM is increased to a certain value,the proximity effect transforms the tunnel junctions from the'0 state'to the'πstate'.The shortening of the transport quasiparticle lifetime can weaken the proximity effect to smooth out the dips and peaks in the tunnel spectrum.This is considered a possible reason that the ZBCP splitting was not observed in some previous experiments.It is expected that these analysis results can serve as a guide for future experiments and the relevant conclusions can be confirmed.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090)
文摘A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.
基金Project supported by the Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515003)the National Natural Science Foundation of China(Grant Nos.110751402347,61274134,51402064,61274059,and 51602340)+3 种基金the University of Science and Technology Beijing(USTB)Start-up Program,China(Grant No.06105033)the Beijing Municipal Innovation and Research Base,China(Grant No.Z161100005016095)the Fundamental Research Funds for the Central Universities,China(Grant Nos.FRF-UM-15-032 and 06400071)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2015387)
文摘Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274067,60876045,and 61674099)the Research and Development Foundation of SHU-SOENs PV Joint Laboratory,China(Grant No.SS-E0700601)
文摘The damage on the atomic bonding and electronic state in a SiO_x（1.4-2.3 nm）/c-Si（150 μm） interface has been investigated.This occurred in the process of depositing indium tin oxide（ITO） film onto the silicon substrate by magnetron sputtering.We observe that this damage is caused by energetic particles produced in the plasma（atoms,ions,and UV light）.The passivation quality and the variation on interface states of the SiO_x/c-Si system were mainly studied by using effective minority carrier lifetime（τ_（eff）） measurement as a potential evaluation.The results showed that the samples＇ τ_（eff）was reduced by more than 90%after ITO formation,declined from 107 μs to 5 μs.Following vacuum annealing at 200 ℃,the τ_（eff） can be restored to 30 μs.The components of Si to O bonding states at the SiO_x/c-Si interface were analyzed by x-ray photoelectron spectroscopy（XPS） coupled with depth profiling.The amorphous phase of the SiO_x layer and the ＂atomistic interleaving structure＂ at the SiO_x/c-Si interface was observed by a transmission electron microscope（TEM）.The chemical configuration of the Si-O fraction within the intermediate region is the main reason for inducing the variation of Si dangling bonds（or interface states） and effective minority carrier lifetime.After an appropriate annealing,the reduction of the Si dangling bonds between SiO_x and near the c-Si surface is helpful to improve the passivation effect.
基金Project supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1)the Natural Science Fund of Gansu Province(No.096RJZA091)
文摘A new two-step phosphorous diffusion gettering（TSPDG） process using a sacrificial porous silicon layer（PSL） is proposed.Due to a decrease in high temperature time,the TSPDG（PSL） process weakens the deterioration in performances of PSL,and increases the capability of impurity clusters to dissolve and diffuse to the gettering regions.By means of the TSPDG（PSL） process under conditions of 900℃/60 min ＋ 700℃/30 min,the effective lifetime of minority carriers in solar-grade（SOG） Si is increased to 14.3 times its original value,and the short-circuit current density of solar cells is improved from 23.5 o 28.7 mA/cm2,and the open-circuit voltage from 0.534 to 0.596 V along with the transform efficiency from 8.1%to 11.8%,which are much superior to the results achieved by the PDG（PSL） process at 900℃for 90 min.
