The results of the study of oscillograms of voltage,current,pulsed electric power and energy input into the plasma of an overstressed nanosecond discharge between aluminum electrodes in argon and mixtures of nitrogen ...The results of the study of oscillograms of voltage,current,pulsed electric power and energy input into the plasma of an overstressed nanosecond discharge between aluminum electrodes in argon and mixtures of nitrogen with oxygen(100-1)at pressures in the range of 13.3-103.3 kPa are presented,the emission plasma spectra are studied.It is shown that in mixtures of nitrogen with oxygen at atmospheric pressure,nanoparticles of aluminum oxide(Al2O3)are formed,the luminescence of which manifests itself in the spectral range of 200-600 nm and which is associated with the formation of F-,F+-centers and more complex aggregate formations based on oxygen vacancies.Calculations of the electron-kinetic coefficients of plasma,transport characteristics,such as mean electron energies in the range 5.116-13.41 eV,are given.The electron concentration was 1.6∙10^(20)m^(-3)-1.1∙10^(20)m^(-3)at a current density of 5.1∙10^(6)A/m^(2)and l.02∙10^(7)A/m^(2)on the surface of the electrode of the radiation source(0.196·10^(-4)m^(2)).Also drift velocities,temperatures and concentrations of electrons,specific losses of the discharge power for elastic and inelastic processes of collisions of electrons per unit of the total concentration of the mixture from the reduced electric field strength(E/N)for a mixture of aluminum,nitrogen,oxygen,rate constants of collisions of electrons with aluminum atoms on the E/N parameter in plasma on a mixture of aluminum vapor,oxygen and nitrogen=30:1000:100000 Pa at a total mixture pressure of P=101030 Pa are given.展开更多
由于抗反向过压或过流冲击能力不足而导致的功率肖特基势垒二极管（SBD）的潜在失效,会影响电路的可靠性,也是器件制造中最难解决的问题。根据SBD特点和应用要求,给出了静电放电（ESD）、反向浪涌电流冲击、单脉冲雪崩能量三种抗反向过...由于抗反向过压或过流冲击能力不足而导致的功率肖特基势垒二极管（SBD）的潜在失效,会影响电路的可靠性,也是器件制造中最难解决的问题。根据SBD特点和应用要求,给出了静电放电（ESD）、反向浪涌电流冲击、单脉冲雪崩能量三种抗反向过电应力（EOS）能力的量化检测方法。针对三种检测方法的特点,明确了失效机理,并从工艺参数、器件结构等方面给出了解决办法。以2 A 100 V SBD芯片为例,通过器件仿真、流片验证,给出了通过p^＋保护环结深、p^＋结浓度、外延层厚度、保护环面积等工艺和结构参数改善ESD、反向浪涌电流冲击、单脉冲雪崩能量的方法。提出了一种p^＋-p^-保护环的结构,可提高功率SBD的抗反向瞬态冲击特性。展开更多
文摘The results of the study of oscillograms of voltage,current,pulsed electric power and energy input into the plasma of an overstressed nanosecond discharge between aluminum electrodes in argon and mixtures of nitrogen with oxygen(100-1)at pressures in the range of 13.3-103.3 kPa are presented,the emission plasma spectra are studied.It is shown that in mixtures of nitrogen with oxygen at atmospheric pressure,nanoparticles of aluminum oxide(Al2O3)are formed,the luminescence of which manifests itself in the spectral range of 200-600 nm and which is associated with the formation of F-,F+-centers and more complex aggregate formations based on oxygen vacancies.Calculations of the electron-kinetic coefficients of plasma,transport characteristics,such as mean electron energies in the range 5.116-13.41 eV,are given.The electron concentration was 1.6∙10^(20)m^(-3)-1.1∙10^(20)m^(-3)at a current density of 5.1∙10^(6)A/m^(2)and l.02∙10^(7)A/m^(2)on the surface of the electrode of the radiation source(0.196·10^(-4)m^(2)).Also drift velocities,temperatures and concentrations of electrons,specific losses of the discharge power for elastic and inelastic processes of collisions of electrons per unit of the total concentration of the mixture from the reduced electric field strength(E/N)for a mixture of aluminum,nitrogen,oxygen,rate constants of collisions of electrons with aluminum atoms on the E/N parameter in plasma on a mixture of aluminum vapor,oxygen and nitrogen=30:1000:100000 Pa at a total mixture pressure of P=101030 Pa are given.
文摘由于抗反向过压或过流冲击能力不足而导致的功率肖特基势垒二极管（SBD）的潜在失效,会影响电路的可靠性,也是器件制造中最难解决的问题。根据SBD特点和应用要求,给出了静电放电（ESD）、反向浪涌电流冲击、单脉冲雪崩能量三种抗反向过电应力（EOS）能力的量化检测方法。针对三种检测方法的特点,明确了失效机理,并从工艺参数、器件结构等方面给出了解决办法。以2 A 100 V SBD芯片为例,通过器件仿真、流片验证,给出了通过p^＋保护环结深、p^＋结浓度、外延层厚度、保护环面积等工艺和结构参数改善ESD、反向浪涌电流冲击、单脉冲雪崩能量的方法。提出了一种p^＋-p^-保护环的结构,可提高功率SBD的抗反向瞬态冲击特性。
